High-power LED lamp using ceramic for heat dissipation

Abstract

The invention relates to a high-power LED lamp using ceramic for heat dissipation. The high-power LED lamp comprises a ceramic heat dissipation base (6), a circuit board is fixed on one surface of the ceramic heat dissipation base (6) and connected with a white-light LED flip chip (5), and a non-transparent lampshade is fixedly arranged above the white-light LED flip chip (5); heat dissipation fins (61) protruding outwards are arranged on the other surface of the ceramic heat dissipation base (6) and are also made of the ceramic. According to the high-power LED lamp, as the heat dissipation fins and the ceramic heat dissipation base are all made of the ceramic, heat produced by the white-light LED flip chip can be absorbed and dissipated rapidly by means of high-conductivity and high-radiation physical characteristics of the ceramic, it is guaranteed that the white-light LED flip chip is in a constant low-temperature state and can operate stably and continuously, and therefore service life of an LED can be prolonged.

Description

technical field [0001] The application date of the present invention is February 27, 2012, the application number is: 201210044889.4, and the divisional application of the invention patent application named "a high-power LED lamp using ceramic heat dissipation". The invention relates to an LED lamp, in particular to a high-power LED lamp using ceramics for heat dissipation. Background technique [0002] Due to the large heat dissipation of LED lamps, if the heat dissipation cannot be carried out in time, especially high-power LEDs will burn out electronic components after a long time, affecting the normal use and life of LED lamps. The heat dissipation devices on the market now usually use metal heat dissipation, but metal heat dissipation is not as effective as ceramic materials. [0003] In addition, the advantages of using a sapphire substrate are good chemical stability, no absorption of visible light, moderate price, and relatively mature manufacturing technology, so i...

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Problems solved by technology

[0008] 1. The N-type electrode 37 is located far away from the P-type electrode 34 in the horizontal direction. The N-type electrode 37 has strict requirements on the position design of the PCB board 39 below it, which affects the packaging quality rate

[0009] 2. The position of the N-type electrode 37 is much higher than that of the P-type electrode 34, resulting in a large gap between it and the PCB board 39 below, and it is easy to make the N-level solder layer 38 too long during soldering, resulting in false soldering or detachment Occurrence of welding

[0010] 3. In order to allow welding of the N-type electrode 37 and the PCB board 39 below it, a large part of the light-emitting area needs to be removed, which affects the luminous efficiency of the LED chip

[0011] 4. The electrode area is not large enough, which affects the injection current efficiency and then affects the luminous efficiency of the LED chip

[0012] 5. P-type electrodes and N-type electrodes are located on both sides of the chip, resulting in different electron flow paths, such as Figure 36 , resulting in uneven resistance and uneven light emission in the light-emitting area of ​​the chip, which affects the luminous efficiency of the LED chip

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