Preparation method of fluorine-doped zinc oxide-based transparent conducting thin film with high mobility
A transparent conductive film, fluorine-doped zinc oxide technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of film electrical performance limitations, inability to diffuse migration, reduce mobility, etc., to achieve reserves Enriched, improved mobility, good reproducibility
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Embodiment 1
[0044] 1) Clean the glass sheet with acetone, ethanol and deionized water with an ultrasonic cleaner for 10 minutes, repeat twice, take it out, dry it with Ar gas, and place it on the substrate tray of the magnetron sputtering equipment;
[0045] 2) After installing the ZnO:F ceramic target (F, Zn atomic ratio is 3%), close the chamber door, turn on the mechanical pump and molecular pump to start vacuuming until the vacuum degree reaches 5×10 -6 Torr, start the substrate heating program and heat the substrate to 300°C;
[0046] 3) Introduce pure Ar into the growth chamber, adjust the air pressure to 12mTorr and start glowing, and pre-sputter for 5 minutes to remove impurities on the target surface;
[0047] 4) Open the sputtering baffle, adjust the growth pressure to 8mTorr, turn on the RF power supply, set the power to 100W, and sputter for 1h to obtain a FZO film with a thickness of about 120nm. The SEM photo of the film is shown in Figure (3)a;
[0048] 5) Take out the fil...
Embodiment 2
[0055] 1) Clean the glass sheet with acetone, ethanol and deionized water with an ultrasonic cleaner for 10 minutes, repeat twice, take it out, dry it with Ar gas, and place it on the substrate tray of the magnetron sputtering equipment;
[0056] 2) After installing the ZnO:F ceramic target (F, Zn atomic ratio is 3%), close the chamber door, turn on the mechanical pump and molecular pump to start vacuuming until the vacuum degree reaches 5×10 -6 Torr, start the substrate heating program and heat the substrate to 450°C;
[0057] 3) Introduce pure Ar into the growth chamber, adjust the air pressure to 12mTorr and start glowing, and pre-sputter for 5 minutes to remove impurities on the target surface;
[0058] 4) Open the sputtering baffle, adjust the growth pressure to 8mTorr, turn on the RF power supply, set the power to 100W, and sputter for 1h to obtain a FZO film with a thickness of about 120nm;
[0059] 5) Take out the film prepared in step 4), put it into a vacuum heating...
Embodiment 3
[0062] 1) Clean the PC plastic with acetone and ethanol using an ultrasonic cleaner for 10 minutes, repeat twice, take it out, dry it with Ar gas, and place it on the substrate tray of the magnetron sputtering equipment;
[0063] 2) After installing the ZnO:F ceramic target (F, Zn atomic ratio is 3%), close the chamber door, turn on the mechanical pump and molecular pump to start vacuuming until the vacuum degree reaches 4×10 -6 Torr, start the substrate heating program and heat the substrate to 75°C;
[0064] 3) Feed pure Ar into the growth chamber, adjust the air pressure to 15mTorr and start glowing, and pre-sputter for 10min to remove impurities on the target surface;
[0065] 4) Open the sputtering baffle, adjust the growth pressure to 7mTorr, turn on the RF power supply, set the power to 150W, and sputter for 1h to obtain a FZO film with a thickness of about 100nm;
[0066] 5) Take out the film prepared in step 4), put it into a vacuum heating furnace for annealing proc...
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