A polycrystalline silicon and quasi-single crystal silicon ingot furnace and its application method

Abstract

The invention discloses an ingotting furnace for polycrystalline silicon and quasi single crystal silicon and an application method for the ingotting furnace. The ingotting furnace comprises a quartz crucible, wherein first induction heating devices are arranged on the outer side of the quartz crucible, second induction heating devices are arranged at the bottom of the quartz crucible, third induction heating devices are arranged at the top of the quartz crucible, a graphite crucible is arranged outside the quartz crucible, a thermal insulating layer is arranged between the quartz crucible and the graphite crucible, and the first induction heating devices are arranged on the outer side of the graphite crucible in a surrounding manner. According to the ingotting furnace for the polycrystalline silicon and the quasi single crystal silicon and the application method for the ingotting furnace, provided by the invention, through the adoption of the double-layered crucible, a plurality of induction heating devices are arranged at different positions, so that the vortex current can be generated in polycrystalline silicon raw materials and solution by adopting the alternating magnetic field generated by spiral coils; because the induction coils are positioned out of the high-temperature thermal regions, the hot loss is less when heating is conducted; through the optimal design of the coil distribution of the induction heating devices, the accurate directional temperature gradient in the furnace can be realized, the direction of the crystal growth can be controlled better, and the directional solidification can be conducted quickly.

Description

technical field [0001] The invention relates to an ingot furnace equipment and its usage method, in particular to a polycrystalline silicon and quasi-single crystal silicon ingot furnace and its usage method. Background technique [0002] Polycrystalline silicon and quasi-monocrystalline ingots are the main production links in the production of polycrystalline silicon and quasi-monocrystalline solar cells. Polysilicon ingot casting furnace is a process in which polysilicon material is melted into a solution and then directional solidified through the control of the thermal field; quasi-silicon ingot casting is a process in which a small amount of single crystal silicon is laid as a seed crystal on the The bottom of the crucible is partially melted, and finally the single crystal silicon is used as the seed crystal for directional solidification. [0003] The existing polysilicon and quasi-single crystal silicon ingot furnaces used in production generally use graphite resist...

AI Technical Summary

Problems solved by technology

The temperature control accuracy of the graphite resistance heater is poor, the loss of the graphite heater is large, and the replacement cycle is short

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