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Barrier layer removal method and barrier layer removal device

A technology of barrier layer and metal layer, which is applied in the direction of electrical components, electrical solid devices, semiconductor/solid device manufacturing, etc., and can solve problems such as damage to copper and etching

Active Publication Date: 2014-08-13
ACM RES SHANGHAI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, NaOH / H 2 o 2 and KOH / H 2 o 2 To a certain extent, it will etch and damage the copper in the slot

Method used

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  • Barrier layer removal method and barrier layer removal device
  • Barrier layer removal method and barrier layer removal device
  • Barrier layer removal method and barrier layer removal device

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Embodiment Construction

[0044] The present invention relates to a semiconductor device processing method and device. More specifically, the present invention relates to removing or etching barrier layers, such as tantalum / tantalum nitride, suitable for low-k dielectric materials. This facilitates various applications of low-k materials in semiconductor devices.

[0045] Figure 1 to Figure 4 Shown is the combination of some new processes in semiconductor processing: copper removal by stress-free polishing, etchant to remove tantalum oxide formed on the surface of the barrier layer during copper polishing, and selective xenon difluoride gas The barrier layer tantalum / tantalum nitride is removed by etching. Among them, no matter the electrochemical copper throwing, the removal of tantalum oxide, or the etching barrier layer of xenon difluoride are all processes without mechanical force. This set of processes thus minimizes mechanical damage to the semiconductor structure, minimizes blanketing effect...

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Abstract

The invention relates to an integration method and an integration device of an unstressed electrochemical polishing technology of semiconductor manufacturing copper interconnection, a technology of removing a tantalum or titanium oxide thin film formed in an unstressed polishing process and a technology of etching to remove tantalum / tantalum nitride or titanium / titanium nitride on a barrier layer by using a xenon difluoride gas phase. The integration method comprises the following steps: firstly, removing copper plated on at least one part of silicon slices through unstressed electrochemical polishing; secondly, removing the tantalum or titanium oxide thin film formed on the surface of the barrier layer in a copper polishing process; and finally etching for removing tantalum / tantalum nitride or titanium / titanium nitride on the barrier layer by using the xenon difluoride gas phase. The integration device comprises three subsystems which are respectively an unstressed electrochemical copper polishing system, a system for removing tantalum or titanium oxide on the surface of the barrier layer by using an etching agent and a xenon difluoride gas phase etching system for removing the barrier layer.

Description

[0001] This application was submitted on May 8, 2009, and the application number is 200910050835.7, which is a divisional application of the patent application entitled "Method and Device for Removing Barrier Layer". technical field [0002] This invention relates to semiconductor processing methods and apparatus. Specifically, it is about stress-free copper polishing and selective removal of barrier layers. More specifically, the present invention relates to processes that can be used to selectively polish copper and stress-free removal of tantalum / tantalum nitride barrier layers in integrated device fabrication. Background technique [0003] Semiconductor devices are formed by forming transistors and interconnection lines on semiconductor silicon wafers through a series of different processing steps. In order for the transistor terminals to be connected to the silicon chip, conductive (eg metal) slots, holes and the like need to be made in the dielectric material of the s...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/67138H01L21/7684H01L21/76865H01L2221/1068H01L2221/1073
Inventor 王坚贾照伟武俊萍谢良智王晖
Owner ACM RES SHANGHAI
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