2 results about "Xenon difluoride" patented technology

A method of producing a diffraction grating of borosilicate glass or barium borosilicate glass, the method comprising the steps of forming a grating on a surface of a silicon wafer the grating through the Bosch process; forming an oxide film on a surface of the grating by heating and exposure to water vapor of the silicon wafer; removing the oxide film using hydrofluoric acid; making the surface provided with the grating of the silicon wafer and a surface of a glass plate undergo anodic bonding; heating the silicon wafer and the glass plate bonded to each other; polishing a surface opposite to the boded surface of the silicon wafer and a surface opposite to the boded surface of the glass plate; and removing silicon from the glass plate by selective etching using xenon difluoride.

This invention provides an integration method for self-curling passive components. The wafer-level front-end process for the self-curling component begins with the deposition of metal thin films on both the front and back of the substrate. Next, a dual-frequency silicon nitride strain layer is deposited via plasma chemical vapor deposition. A first positive photolithography step followed by inductively coupled plasma dry etching is used to pattern the mesa. Four negative photolithography steps are then used to progressively pattern and deposit a metal step layer, a copper metal layer, a gold electrode layer, and an etching window layer. An oriented protective layer is deposited using atomic force deposition. Finally, a xenon difluoride dry etching process is used to etch the sacrificial layer, releasing the film stress from the dual-frequency silicon nitride strain layer and triggering curling to obtain a self-curling inductor. A modified layer consisting of voids, a high dislocation density layer, and cracks is generated inside the wafer using a specific wavelength laser. The wafer is then cleaved starting from this modified layer. Finally, UV desolventizing is used to obtain separable, micron-scale independent inductors.