4 results about "Xenon difluoride" patented technology

Low loss photonic waveguides and ring resonators are necessary for highly accurate gyroscope functionality. For fabrication of these low loss waveguides and ring resonators, an improved and cost-effective fabrication method has been proposed wherein for silicon nitride waveguides, a minimum of 2 μm thin bottom oxide cladding above etched trenches (cavities) in silicon facilitates both lower losses and higher Q values ring resonators as compared to the conventional 8 μm thick bottom oxide cladding without etched trenches in silicon. The trenches below the thin bottom oxide cladding are created through xenon difluoride (XeF2) gas etching in selective areas of silicon substrate through vias (openings). After etching the trenches, these vias are filled by the addition of a final top oxide cladding layer. The proposed method provides about three times improvement both in propagation losses as well as in quality factor for side coupled ring resonators.

A method of producing a diffraction grating of borosilicate glass or barium borosilicate glass, the method comprising the steps of forming a grating on a surface of a silicon wafer the grating through the Bosch process; forming an oxide film on a surface of the grating by heating and exposure to water vapor of the silicon wafer; removing the oxide film using hydrofluoric acid; making the surface provided with the grating of the silicon wafer and a surface of a glass plate undergo anodic bonding; heating the silicon wafer and the glass plate bonded to each other; polishing a surface opposite to the boded surface of the silicon wafer and a surface opposite to the boded surface of the glass plate; and removing silicon from the glass plate by selective etching using xenon difluoride.

This invention provides an integration method for self-curling passive components. The wafer-level front-end process for the self-curling component begins with the deposition of metal thin films on both the front and back of the substrate. Next, a dual-frequency silicon nitride strain layer is deposited via plasma chemical vapor deposition. A first positive photolithography step followed by inductively coupled plasma dry etching is used to pattern the mesa. Four negative photolithography steps are then used to progressively pattern and deposit a metal step layer, a copper metal layer, a gold electrode layer, and an etching window layer. An oriented protective layer is deposited using atomic force deposition. Finally, a xenon difluoride dry etching process is used to etch the sacrificial layer, releasing the film stress from the dual-frequency silicon nitride strain layer and triggering curling to obtain a self-curling inductor. A modified layer consisting of voids, a high dislocation density layer, and cracks is generated inside the wafer using a specific wavelength laser. The wafer is then cleaved starting from this modified layer. Finally, UV desolventizing is used to obtain separable, micron-scale independent inductors.

The invention discloses a method for forming holes in a substrate and application of the method, and belongs to the field of quantum chip manufacturing. The method for forming the holes in the substrate comprises the steps that xenon difluoride and oxygen plasmas are used as working media, and etching is conducted from a target area of the surface of the substrate to the interior under the action of a directional electric field so that part of materials of the substrate can be removed; and carrying out sound wave cleaning on the substrate in the cleaning solution. By implementing the above process, a high quality hole can be formed in a substrate in order to improve the quality of a component fabricated in the hole.