58 results about "Xenon difluoride" patented technology

This invention relates to an improved process for the selective etching of TiN from silicon dioxide (quartz) and SiN surfaces commonly found in semiconductor deposition chambers equipment and tools. In the process, an SiO₂ or SiN surface having TiN thereon is contacted with XeF₂ in a contact zone to selectively convert the TiN to a volatile species and then the volatile species is removed from the contact zone. XeF₂ can be preformed or formed in situ by reaction between Xe and a fluorine compound.

This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF₂ by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F₂, NF₃, C₂F₆, CF₄, C₃F₈, SF₆, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

A method for etching silicon carbide, a mask being produced on a silicon carbide layer, the unmasked areas of the silicon carbide layer being etched using a fluorine-containing compound, which is selected from the group including interhalogen compounds of fluorine and/or xenon difluoride. The use of chlorine trifluoride, chlorine pentafluoride, and/or xenon difluoride for structuring silicon carbide layers covered with masks containing silicon dioxide and/or silicon oxide carbide; a structured silicon carbide layer obtained by the method, and a microstructured electromechanical component or a microelectronic component including a structured silicon carbide layer obtained by the method.

The invention discloses a method for inducing high-nitrogen-doped photo-reduced graphene oxide film through fluorination. The method comprises the following steps: by taking graphene oxide prepared by chemical oxidation as a raw material, performing spin coating on graphene oxide sheets on a substrate to form a film, mixing the graphene oxide film with xenon difluoride, fluorinating and illuminating to obtain the high-nitrogen-doped photo-reduced graphene oxide film. According to the method, a fluorinated graphene film is illuminated in an NH3 (flow is 10 torr to 30 torr) atmosphere by using laser or a mercury lamp with energy of 65-75mJ/cm<2> for 5-60 minutes in a selectable region; a defluorination effect is generated during photoreduction, so that vacancy defects are introduced; due to the increment of the vacancy defects, N atom doping is promoted, so that the N-doped content is increased. The high-nitrogen-doped photo-reduced graphene oxide film is convenient to operate and low in cost, and can be prepared on a large scale; the nitrogen-doped content, the conductivity of graphene and the effect of a band gap can be adjusted and controlled through the illumination time, the illumination intensity and the fluorine doping concentration.

The invention relates to a micro-nano processing method based on injection of focused ion beams and etching of auxiliary gas, which comprises the following steps: placing a substrate to be processed in a focused ion beam sample chamber; observing appearance of the substrate through an ion beam imaging system; carrying out ion injection and processing on the substrate by using the focused ion beams according to a target processing pattern; and carrying out micro-nano processing on an ion injected area by in situ using a method of auxiliary etching of focused ion beam xenon fluoride gas in the focused ion beam sample chamber. The method is stable and reliable, not only can remarkably improve preparation efficiency, but also improves processing flexibility, can effectively reduce influence of processing re-deposition, and remarkably improves processing accuracy and processing quality.

The invention discloses system and method for releasing a micro-electromechanical system (MEMS) structure by etching a silicon sacrificial layer. The method adopts xenon difluoride as an etching reactive gas and adopts supercritical carbon dioxide as a carrier gas to release the silicon sacrificial layer. Based on the unique property of carbon dioxide in a supercritical state, silicon is etched more uniformly by xenon difluoride, the smoothness of an etched surface is higher and the etching is more complete. Compared with traditional wet release process and plasma release process, the method prevents devices from being damaged due to stirring or adhesion in the wet release process, improves the uniformity of an entire wafer, increases the reaction speed and the efficiency, shortens the process time, and achieves the effect of feasible large-scale production process of XeF2 etching.

An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent.

The present invention provides a method for manufacturing a semiconductor device capable of acquiring productivity when a p-type source/drain is formed by the implantation of a BF₂ and B ions. The method for manufacturing a semiconductor device includes the steps of: implanting a BF₂ ion in a p-type source/drain region on a silicon substrate with an ion implantation energy of from about 10 keV to about 20 keV; implanting B ion in the p-type source/drain region with an ion implantation energy of from about 5 keV to about 10 keV; and forming a p-type source/drain by carrying out a thermal treatment.

The invention relates to an integration method and an integration device of an unstressed electrochemical polishing technology of semiconductor manufacturing copper interconnection, a technology of removing a tantalum or titanium oxide thin film formed in an unstressed polishing process and a technology of etching to remove tantalum/tantalum nitride or titanium/titanium nitride on a barrier layer by using a xenon difluoride gas phase. The integration method comprises the following steps: firstly, removing copper plated on at least one part of silicon slices through unstressed electrochemical polishing; secondly, removing the tantalum or titanium oxide thin film formed on the surface of the barrier layer in a copper polishing process; and finally etching for removing tantalum/tantalum nitride or titanium/titanium nitride on the barrier layer by using the xenon difluoride gas phase. The integration device comprises three subsystems which are respectively an unstressed electrochemical copper polishing system, a system for removing tantalum or titanium oxide on the surface of the barrier layer by using an etching agent and a xenon difluoride gas phase etching system for removing the barrier layer.

The invention discloses an end point detection device used for detecting an end point of a xenon difluoride gas phase etching process. The end point detection device comprises a process cavity, a gas concentration detection device, an end point control device and a gas intake control device, wherein the process cavity is provided with a gas inlet and a gas outlet; the gas concentration detection device is provided at the gas outlet of the process cavity and detects the concentration of a xenon difluoride gas discharged from the process cavity; the end point control device is connected with the gas concentration detection device, calculates the concentration of the discharged xenon difluoride gas according to a detection result of the gas concentration detection device, and compares the concentration with a preset concentration value, and the end point control device generates and sends a control signal if the concentration of the discharged xenon difluoride gas is equal to or greater than the preset concentration value; and the gas intake control device is connected with the gas inlet of the process cavity, constant quantity of the xenon difluoride gas is filled in the process cavity through the gas inlet of the process cavity, and the gas intake device stops filling the xenon difluoride gas into the process cavity after receiving the control signal sent by the end point control device. The invention further discloses an end point detection method.

The invention discloses a method for preparing a fluorine-doped helical carbon nanotube. The method comprises the following steps: at first, preparing oxide nanoparticles of nickel by utilizing the sol-gel method reduce the oxide nanoparticles of nickel with hydrogen into nickel nanoparticles to serve as a catalyst to realize high-temperature pyrolysis of acetylene and reacting the product with xenon difluoride to obtain a fluorinated helical carbon nanotube. The raw materials of the sol-gel method include nickel nitrate hexahydrate and citric acid monohydrate, and a solvent is anhydrous ethanol. According to the invention, the photoluminescence of the fluorine-doped helical carbon nanotube is increased to 263 nm and 291 nm deep UV regions, so that the shortcomings of a conventional semi-conductor material in the region are greatly avoided, and the fluorine-doped helical carbon nanotube can serve as base materials of ultraviolet fluorescence and ultraviolet detectors and is used in the fields of photoetching technique, optical information storage and pharmaceutical analysis.

In one embodiment, a sacrificial layer is deposited over a base layer. The sacrificial layer is used to define a subsequently formed floating metal structure. The floating metal structure may be anchored into the base layer. Once the floating metal structure is formed, the sacrificial layer surrounding the floating metal structure is etched to create a unity-k dielectric region separating the floating metal structure from the base layer. The unity-k dielectric region also separates the floating metal structure from another floating metal structure. In one embodiment, a noble gas fluoride such as xenon difluoride is used to etch a sacrificial layer of polycrystalline silicon.

The invention discloses a rubber surface fluorination modification testing device which mainly comprises an xenon difluoride generating device, a gas flow meter, a pressure meter, a rubber surface fluorination device, a tail gas recovering device, a vacuum pump, a motor, an xenon difluoride recovering device, a throttle valve, a stainless steel pipe, a temperature control panel, a heating plate, a sealing ring, a rubber sample placing frame and other parts. A rubber sample is placed on the rubber sample placing frame and is positioned in the rubber fluorination device, and a defined mount of xenon difluoride gas is introduced to carry out surface fluorination modification on the rubber sample. The rubber fluorination device is vacuumized through the vacuum pump, the throttle valve and the stainless steel pipeline, and an xenon difluoride crystal is heated at certain temperature by using the heating device so as to be sublimated into a gaseous state, the gaseous xenon difluoride enters the rubber fluorination device under the action of a pressure difference, and the rubber sample is subjected to surface fluorination modification. By adopting the rubber surface fluorination modification testing device, rubber is subjected to surface fluorination modification testing under the condition of different temperatures and pressure intensities.

The invention discloses a microelectronic mechanical system structure forming method, which comprises the following steps: providing a substrate; depositing polycrystalline silicon on the substrate; treating the polycrystalline silicon, so that the polycrystalline silicon is transformed into porous polycrystalline silicon, wherein the porous polycrystalline silicon is used as a sacrificial layer; imaging the porous polycrystalline silicon to form a sacrificial layer pattern; depositing a structure layer on the imaged porous polycrystalline silicon; and releasing the porous polycrystalline silicon sacrificial layer. The porous polycrystalline silicon is adopted as the sacrificial layer; and the sacrificial layer is in a pore form so that the removal rate of the sacrificial layer is improved. In addition, the porous polycrystalline silicon sacrificial layer can be released by adopting xenon difluoride; and a production product is in a gaseous state at room temperature and atmospheric pressure, so that the adhesion phenomenon is avoided; and the reliability of microelectronic mechanical system structure formation is improved.

The invention discloses a preparation method of fluorinated carbon nitride with high fluorine content, which comprises the following steps: by using graphite-phase carbon nitride as a raw material, xenon difluoride as a fluorine source and a high-pressure digestion tank as a reaction chamber, carrying out constant-temperature reaction at 200+/-20 DEG C under the condition that the graphite-phase carbon nitride and xenon difluoride are not in contact with each other, thereby obtaining the fluorinated carbon nitride, wherein the mass ratio of xenon difluoride to graphite-phase carbon nitride isgreater than or equal to 10. Compared with the prior art, the method disclosed by the invention takes xenon difluoride as a fluorine source, and compared with fluorine gas, the method is mild in fluorination, relatively stable and safer to operate, xenon difluoride is used as a fluorine source, an existing conventional high-pressure digestion tank can be used as reaction equipment, special customization is not needed, and the production cost is effectively reduced. In addition, xenon difluoride is used as a fluorine source and is matched with a high-pressure digestion tank to be used as reaction equipment to react at the constant temperature of 200+/-20 DEG C, so that the high-fluorine-content doped graphite-phase carbon nitride can be obtained.