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Method for inducing high-nitrogen-doped photo-reduced graphene oxide film through fluorination

A graphene film and fluorination technology, which is applied in the field of simple preparation of macro-graphene materials, can solve the problems of complex process and ineffective adjustment of graphene band gap, and achieve the effect of convenient operation and low cost

Inactive Publication Date: 2014-11-05
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Unfortunately, the amount of nitrogen doped by these methods generally does not exceed 10 at. %, and the process is complicated, so the effect on adjusting the band gap of graphene is not significant

Method used

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  • Method for inducing high-nitrogen-doped photo-reduced graphene oxide film through fluorination
  • Method for inducing high-nitrogen-doped photo-reduced graphene oxide film through fluorination
  • Method for inducing high-nitrogen-doped photo-reduced graphene oxide film through fluorination

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Experimental program
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Embodiment

[0027] (1) Mix 8g of flake graphite, 8g of sodium nitrate and 384mL of commercially available concentrated sulfuric acid in an ice bath; then slowly add 48g of potassium permanganate, stir with a magnetic force and heat at 35 degrees Celsius for 2 hours; then add 320mL to Deionized water was stirred for 15 minutes, and then 800 mL deionized water and 40 mL HO were added 2 o 2 Stirring for 10 minutes gave a green suspension.

[0028] (2) Add 0.0001 mol / L dilute nitric acid solution to the green suspension obtained in step (1) for washing, and then centrifuge at a centrifugal speed of 14000 rpm to obtain a precipitate.

[0029] (3) Repeat step (2) 3 times.

[0030] (4) Add deionized water to the suspension obtained in step (3), and centrifuge at 14,000 rpm to obtain a precipitate.

[0031] (5) Repeat step (4) adding deionized water and then centrifuging for 10 times to ensure that no other impurities are contained; a graphene oxide solution is obtained.

[0032] (6) Drying t...

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Abstract

The invention discloses a method for inducing high-nitrogen-doped photo-reduced graphene oxide film through fluorination. The method comprises the following steps: by taking graphene oxide prepared by chemical oxidation as a raw material, performing spin coating on graphene oxide sheets on a substrate to form a film, mixing the graphene oxide film with xenon difluoride, fluorinating and illuminating to obtain the high-nitrogen-doped photo-reduced graphene oxide film. According to the method, a fluorinated graphene film is illuminated in an NH3 (flow is 10 torr to 30 torr) atmosphere by using laser or a mercury lamp with energy of 65-75mJ / cm<2> for 5-60 minutes in a selectable region; a defluorination effect is generated during photoreduction, so that vacancy defects are introduced; due to the increment of the vacancy defects, N atom doping is promoted, so that the N-doped content is increased. The high-nitrogen-doped photo-reduced graphene oxide film is convenient to operate and low in cost, and can be prepared on a large scale; the nitrogen-doped content, the conductivity of graphene and the effect of a band gap can be adjusted and controlled through the illumination time, the illumination intensity and the fluorine doping concentration.

Description

Technical field [0001] The present invention involves a simple preparation method of a macro graphene material with controllable structure and performance, especially a method of fluoride -induced high nitrogen doped glychyne graphene film.Graphene products. Background technique [0002] The graphene has the ideal QR crystal structure to give it many unique physical chemical properties such as light, electricity, magnetic, and heat, which has attracted widespread attention in the fields of condensed physics, chemistry and material science.Graphene usually preparations for micro -mechanical stripping, chemical gas deposition, and extension growth.However, the size of the graphene obtained by the micro -mechanical peeling method is not easy to control. Neither the chemical gas deposition and extension growth method cannot be obtained, and there are disadvantages such as high cost and inefficient.And the application of the zero band band characteristics of GraPhene has been limited ...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 李新宇唐涛李明文剑锋
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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