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Preparation method of fluorinated carbon nitride with high fluorine content

A technology of reducing carbon nitride and fluorine content, which is applied in the field of preparation of fluorinated carbon nitrogen, can solve the problems of increased production costs and threats to the health of operators, and achieves the advantages of reduced production costs, mild fluorination, and safe operation Effect

Pending Publication Date: 2020-06-19
GUANGXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method uses fluorine gas as the fluorine source. As we all know, fluorine gas is a very corrosive diatomic gas, and most metals will be corroded by fluorine. Therefore, the equipment used in the above invention must be made of special materials. production, leading to an increase in production costs; on the other hand, fluorine gas is a highly toxic substance, and the use of fluorine gas poses a great threat to the health of operators

Method used

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  • Preparation method of fluorinated carbon nitride with high fluorine content
  • Preparation method of fluorinated carbon nitride with high fluorine content
  • Preparation method of fluorinated carbon nitride with high fluorine content

Examples

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Embodiment 1

[0017] Embodiment 1: the structure of the support plate

[0018] The structure of the support plate is as figure 1 As shown, it includes three cylindrical support feet and a circular tray fixed on the three support feet, and both the support feet and the tray are made of quartz material.

Embodiment 2

[0019] Embodiment 2: Preparation of fluorine-doped graphite phase carbon nitride

[0020] Take 1g of xenon difluoride and place it on the bottom of the polytetrafluoroethylene inner cup, take 0.1g of graphite phase carbon nitride and place it on the support plate of the structure described in Example 1, then place it in the polytetrafluoroethylene inner cup, cover the inner Then put the polytetrafluoroethylene inner cup into the stainless steel outer tank of the high-pressure digestion tank, tighten the stainless steel cover, then place it in an oven, and react at a constant temperature of 200 ° C for 8 hours. After the reaction, naturally cool to room temperature to obtain fluorine Doped graphitic carbon nitride.

Embodiment 3

[0021] Embodiment 3: Preparation of fluorine-doped graphite phase carbon nitride

[0022] Repeat Example 2, the difference is that the amount of xenon difluoride is 2g.

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PUM

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Abstract

The invention discloses a preparation method of fluorinated carbon nitride with high fluorine content, which comprises the following steps: by using graphite-phase carbon nitride as a raw material, xenon difluoride as a fluorine source and a high-pressure digestion tank as a reaction chamber, carrying out constant-temperature reaction at 200+ / -20 DEG C under the condition that the graphite-phase carbon nitride and xenon difluoride are not in contact with each other, thereby obtaining the fluorinated carbon nitride, wherein the mass ratio of xenon difluoride to graphite-phase carbon nitride isgreater than or equal to 10. Compared with the prior art, the method disclosed by the invention takes xenon difluoride as a fluorine source, and compared with fluorine gas, the method is mild in fluorination, relatively stable and safer to operate, xenon difluoride is used as a fluorine source, an existing conventional high-pressure digestion tank can be used as reaction equipment, special customization is not needed, and the production cost is effectively reduced. In addition, xenon difluoride is used as a fluorine source and is matched with a high-pressure digestion tank to be used as reaction equipment to react at the constant temperature of 200+ / -20 DEG C, so that the high-fluorine-content doped graphite-phase carbon nitride can be obtained.

Description

technical field [0001] The invention relates to fluorine-doped graphite phase carbon nitride, in particular to a preparation method of fluorinated carbon nitride with high fluorine content. Background technique [0002] Visible light-driven semiconductor photocatalysis technology has potential applications in pollution control, carbon dioxide conversion to hydrocarbon fuels, hydrogen energy evolution, etc., and has attracted widespread attention in recent decades. In order to make full use of solar energy and improve photocatalytic efficiency, the development of new visible light-driven photocatalysts has become the focus of attention. [0003] Graphite carbon nitride (g-C 3 N 4 ) have been widely used in the field of photocatalysis due to their good chemical stability and catalytic activity. Graphite carbon nitride can emit strong fluorescence under the excitation of ultraviolet light. Direct doping of nonmetallic elements in graphitic carbon nitride is a simple and fea...

Claims

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Application Information

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IPC IPC(8): B01J27/24C09K11/65C01B21/082
CPCB01J27/24C09K11/65C01B21/0605B01J35/39
Inventor 马玉秋刘富池孔文婕陈俊新秦海军
Owner GUANGXI NORMAL UNIV
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