Manufacturing method of solar energy battery
A solar cell and manufacturing method technology, applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of expensive equipment, high operating costs, and high process complexity, so as to reduce manufacturing costs, solve alignment problems, and simplify process steps. Effect
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Example Embodiment
[0043] Example 1
[0044] reference Figure 1-5 The manufacturing method of the solar cell described in this embodiment is as follows:
[0045] Such as figure 1 As shown, a substrate is provided. The substrate is a commercially available silicon wafer for manufacturing solar cells. After texturing on the front surface of the silicon wafer 1, a P-type heavily doped layer 2 is formed on the entire back of the silicon wafer 1. When the IBC battery is in use, the front side receives light, and the back side is provided with electrodes. Due to the habit of the art, the upper side is the back side and the lower side is the front side in the figure, which is well known to those skilled in the art.
[0046] Such as figure 2 As shown, a mask 3 is formed on the entire back surface of the silicon wafer 1, and the area not covered by the mask 3 is an open area. Specifically, the specific method for forming the mask 3 can be to first apply a mask layer on the back surface, then form a patterned...
Example Embodiment
[0053] Example 2
[0054] The principle of embodiment 2 is the same as that of embodiment 1, but the difference lies in:
[0055] A physical method such as laser ablation is used to etch the part not covered by the mask to form the groove, and then a chemical method (such as wet chemical etching) is used to remove the damaged layer left by the physical method.
[0056] The rest of the steps not mentioned are the same as in Example 1.
Example Embodiment
[0057] Example 3
[0058] The principle of Embodiment 3 is the same as that of Embodiment 1, and the difference lies in:
[0059] During the manufacturing process of the solar cell, it also includes the step of forming an anti-reflection layer on the front surface of the silicon wafer.
[0060] The rest of the steps not mentioned are the same as in Example 1.
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