Double-layer transparent conducting thin film and preparation method thereof

A transparent conductive film, double-layer technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of easy reduction, high price, poor stability, etc., to achieve non-toxic materials and low cost , to achieve the effect of industrial production

Inactive Publication Date: 2014-08-20
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because indium is toxic, expensive, poor in stability, and easily reduced in a hydrogen plasma atmosphere, people are trying to find a low-cost and high-performance ITO replacement material.

Method used

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  • Double-layer transparent conducting thin film and preparation method thereof
  • Double-layer transparent conducting thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) SnO 2 The target and Cu target are loaded into the magnetron sputtering chamber; SnO 2 SnO in target 2 The purity of Cu is 99.5%; the purity of Cu in the Cu target is 99.99%.

[0027] Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, dried with high-purity nitrogen, and placed in a magnetron sputtering chamber; the distance between the target and the quartz substrate was 90mm;

[0028] (2) Pump the background vacuum of the magnetron sputtering system to 1.0×10 -6 Torr; feed 60sccm of argon and 4sccm of oxygen (the ratio of argon to oxygen is 15:1), the total sputtering pressure is adjusted to 5mTorr; the sputtering power is 200W, and the deposition is performed to obtain 30nm thick SnO 2 film.

[0029] Ar and O 2 The purity is above 99.99%;

[0030] (3) Pump the vacuum degree of the magnetron sputtering system to 1.0×10 -6 Torr; argon gas of 60 sccm was introduced, and the pressure was adjus...

Embodiment 2

[0034] (1) SnO 2 The target and Cu target are loaded into the magnetron sputtering chamber; SnO 2 SnO in target 2 The purity of Cu is 99.5%; the purity of Cu in the Cu target is 99.99%;

[0035] Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a magnetron sputtering chamber; the distance between the target and the quartz substrate was 60 mm.

[0036] (2) Pump the background vacuum of the magnetron sputtering system to 5.0×10 -5 Torr. 60 sccm of argon gas and 4 sccm of oxygen gas (the ratio of argon to oxygen is 15:1) were introduced, and the total sputtering gas pressure was adjusted to 0.5 mTorr. The sputtering power is 50W, and the SnO after deposition is 30nm 2 film;

[0037] Ar and O 2 The purity is above 99.99%;

[0038] (3) Pump the vacuum of the magnetron sputtering system to 5.0×10 -5 Torr. 60 sccm of argon gas was introduced, and the pressure was adjusted ...

Embodiment 3

[0041] (1) SnO 2 The target and Cu target are loaded into the magnetron sputtering chamber; SnO 2 SnO in target 2 The purity of Cu is 99.5%; the purity of Cu in the Cu target is 99.99%;

[0042] Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a magnetron sputtering chamber; the distance between the target and the quartz substrate was 60 mm.

[0043] (2) Pump the background vacuum of the magnetron sputtering system to 6.0×10 -6 Torr. 60 sccm of argon gas and 4 sccm of oxygen gas (the ratio of argon to oxygen is 15:1) were introduced, and the total sputtering gas pressure was adjusted to 2 mTorr. The sputtering power is 150W, and the SnO after deposition is 30nm 2 film;

[0044] Ar and O 2 The purity is above 99.99%;

[0045] (3) Pump the vacuum of the magnetron sputtering system to 6.0×10 -6 Torr. 60 sccm of argon gas was introduced, and the pressure was adjusted t...

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Abstract

The invention discloses a double-layer transparent conducting thin film and a preparation method thereof. The double-layer transparent conducting thin film comprises a lower Cu layer and a top SnO2 layer and is a SnO2/Cu transparent conducting thin film. The preparation method comprises the following steps: firstly, putting a SnO2 target and a Cu target in a magnetron sputtering cavity, vacuumizing till the vacuum degree is below 1.0*10<-5> Torr, and using Ar and O2 as sputtering gases for sputtering the SnO2 layer, the thickness of which is 10-120nm; and vacuumizing again till the vacuum degree is below 5.0*10<-5> Torr, and using Ar as a sputtering gas for sputtering the Cu layer, the thickness of which is 3-20nm, thus obtaining the SnO2//Cu double-layer transparent conducting thin film. The double-layer transparent conducting thin film has extremely high electric conductivity and good optical transmittance and is low in cost; the preparation method is simple; the materials are nontoxic; and compared with other technologies, the preparation method is relatively beneficial to realization of industrial production.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic material preparation, in particular to a kind of SnO 2 / Cu double-layer transparent conductive film and preparation method thereof. Background technique [0002] Transparent conductive oxide thin films have a wide range of applications in electronics, such as flat-panel displays, thermal mirrors, organic light-emitting devices, optoelectronic devices, and solar cells. At present, indium tin oxide thin film (IT0) is widely used. Because ITO has the characteristics of high transmittance, low resistivity and high work function, it has been applied in many aspects. However, because indium is toxic, expensive, poor in stability, and easily reduced in a hydrogen plasma atmosphere, people are trying to find a low-cost and high-performance ITO replacement material. Among them, SnO 2 The price is cheaper than ITO, SnO 2 The material is non-toxic and has high chemical and thermal stability. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/18C23C14/08
Inventor 李玲霞于仕辉董和磊许丹金雨馨
Owner TIANJIN UNIV
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