Method for preparing Ba1-xSrxTiO3/Bi1.5MgNb1.5O7 (BST/BMN) composite film voltage-controlled varactor tube

A composite film, varactor technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem of low dielectric tuning rate, high dielectric loss of BST film material, limited BST film application, etc. problems, to achieve the effect of good device stability, moderate tuning rate, and low dielectric loss
CN103993286AInactive Publication Date: 2014-08-20TIANJIN UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TIANJIN UNIV
Publication Date
2014-08-20
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for preparing a Ba1-xSrxTiO3 / Bi1.5MgNb1.5O7 (BST / BMN) composite film voltage-controlled varactor tube. The method comprises the following steps: firstly, preparing Bi1.5Mg1.0Nb1.5O7, namely a BMN target material and Ba0.6Sr0.4TiO3, namely a BST target material by adopting a solid-phase sintering method; adopting a Pt-Si substrate, utilizing a magnetron sputtering deposition technology, utilizing Ar and O2 as sputtering gases, and depositing to obtain a BMN film layer of which the thickness is 150-300nm and a BST film layer of which the thickness is 150-300nm; then carrying out post annealing treatment at 700 DEG C, and preparing a metal electrode by using a mask on the BST film, so as to prepare the BST / BMN composite film voltage-controlled varactor tube. The BST / BMN composite film voltage-controlled varactor tube is low in dielectric loss (lower than 0.005), moderate in tuning rate (greater than or equal to 30% @100KHz), and good in apparatus stability, and a good electronic component basis is provided for development and application of electronic communication equipment.
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Description

technical field

[0001] The invention relates to electronic information materials and components, in particular to a method for preparing a BST / BMN composite film voltage-controlled varactor. Background technique

[0002] With the development of radar, satellite, communication and other technologies, the application of phased array antenna is becoming more and more extensive. As the core component of the phased array antenna, the performance of the microwave phase shifter directly determines the important technical indicators such as the working frequency band, response speed, insertion loss, power, and volume of the transmitting / receiving component. Traditional ferrite phase shifters and semiconductor PIN diode phase shifters cannot meet the increasing technical requirements due to their own defects. barium strontium titanate (Ba 1-x Sr x TiO 3 , BST) ferroelectric thin film phase shifter has the characteristics of low cost, high speed, high precision, small size, etc., ...

Claims

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