Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of BST/BMN composite film pressure-controlled varactor

A composite film and varactor technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problem of low dielectric tuning rate, high dielectric loss of BST film materials, and restrictions on the application of BST films, etc. problem, to achieve the effect of good device stability, moderate tuning rate and low dielectric loss

Inactive Publication Date: 2016-06-15
TIANJIN UNIV
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the high dielectric loss of BST thin film materials, this limits the application of BST thin films
Recently Bi 1.5 MgNb 1.5 o 7 (BMN) has also begun to step into the field of vision of researchers, which has low dielectric loss, but its dielectric tuning rate is relatively low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of BST/BMN composite film pressure-controlled varactor
  • A kind of preparation method of BST/BMN composite film pressure-controlled varactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Prepare BMN target and BST target by solid phase sintering method:

[0027] Press Bi with electronic balance 1.5 MgNb 1.5 o 7 The stoichiometric ratio of the corresponding elements is called Bi 2 o 3 , MgO and Nb 2 o 5 (purity is 99%), after fully mixing, press molding under the pressure of 20Mpa, put in box-type electric furnace and gradually heat up to 1150 ℃, and keep warm for 5 hours;

[0028] Press Ba with electronic balance 0.6 Sr 0.4 TiO 3 The stoichiometric ratio of the corresponding elements weighs BaCO 3 , SrCO 3 and TiO 2 , (purity is 99%) after being fully mixed, pressed under the pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1450 ° C, and kept for 10 hours.

[0029] (2) Clean the Pt-Si substrate with N 2 Blow dry and place on magnetron sputtering sample stage.

[0030] (3) Pump the background vacuum of the magnetron sputtering system to 8.0×10 -6 Torr, and then heat the substrate to 400°C.

...

Embodiment 2

[0037] (1) Prepare BMN target and BST target by solid phase sintering method:

[0038] Press Bi with electronic balance 1.5 MgNb 1.5 o 7 The stoichiometric ratio of the corresponding elements is called Bi 2 o 3 , MgO and Nb 2 o 5 (purity is 99%), after fully mixing, press molding under the pressure of 20Mpa, put in box-type electric furnace and gradually heat up to 1150 ℃, and keep warm for 5 hours;

[0039] Press Ba with electronic balance 0.6 Sr 0.4 TiO 3 The stoichiometric ratio of the corresponding elements weighs BaCO 3 , SrCO 3 and TiO 2 , (purity is 99%) after being fully mixed, pressed under the pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1450 ° C, and kept for 10 hours.

[0040] (2) Clean the Pt-Si substrate with N 2 Blow dry and place on magnetron sputtering sample stage.

[0041] (3) Pump the background vacuum of the magnetron sputtering system to 8.0×10 -6 Torr, and then heat the substrate to 400°C.

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a Ba1-xSrxTiO3 / Bi1.5MgNb1.5O7 (BST / BMN) composite film voltage-controlled varactor tube. The method comprises the following steps: firstly, preparing Bi1.5Mg1.0Nb1.5O7, namely a BMN target material and Ba0.6Sr0.4TiO3, namely a BST target material by adopting a solid-phase sintering method; adopting a Pt-Si substrate, utilizing a magnetron sputtering deposition technology, utilizing Ar and O2 as sputtering gases, and depositing to obtain a BMN film layer of which the thickness is 150-300nm and a BST film layer of which the thickness is 150-300nm; then carrying out post annealing treatment at 700 DEG C, and preparing a metal electrode by using a mask on the BST film, so as to prepare the BST / BMN composite film voltage-controlled varactor tube. The BST / BMN composite film voltage-controlled varactor tube is low in dielectric loss (lower than 0.005), moderate in tuning rate (greater than or equal to 30% @100KHz), and good in apparatus stability, and a good electronic component basis is provided for development and application of electronic communication equipment.

Description

technical field [0001] The invention relates to electronic information materials and components, in particular to a method for preparing a BST / BMN composite film voltage-controlled varactor. Background technique [0002] With the development of radar, satellite, communication and other technologies, the application of phased array antenna is becoming more and more extensive. As the core component of the phased array antenna, the performance of the microwave phase shifter directly determines the important technical indicators such as the working frequency band, response speed, insertion loss, power, and volume of the transmitting / receiving component. Traditional ferrite phase shifters and semiconductor PIN diode phase shifters cannot meet the increasing technical requirements due to their own defects. barium strontium titanate (Ba 1-x Sr x TiO 3 , BST) ferroelectric thin film phase shifter has the characteristics of low cost, high speed, high precision, small size, etc., ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/04
Inventor 李玲霞于仕辉许丹董和磊金雨馨
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com