Method for recovering copper, indium, gallium and selenium

The technology of a copper indium gallium selenide and a recovery method is applied in the field of non-ferrous metal metallurgy, which can solve the problems of complex process and high cost, and achieve the effect of efficient recovery, simplicity and recovery

Active Publication Date: 2014-09-03
ZHUZHOU SMELTER GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the defects of the existing copper indium gallium selenium recovery process of copper, indium, gallium and seleniu

Method used

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  • Method for recovering copper, indium, gallium and selenium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Using 3 kg of CIGS waste as raw material, the composition of the raw material is: 19.8% by weight of copper, 25.4% by weight of indium, 5.7% by weight of gallium, and the balance being selenium.

[0057] 1. CIGS electrolysis steps

[0058] This raw material is put into an indium electrolytic cell, and electrolytic refining is carried out in a hydrochloric acid solution.

[0059] The electrolysis conditions are: the electrolyte is hydrochloric acid solution, the pH is 2.5, and the electrolysis temperature is 35°C.

[0060] As a result, indium is electrodeposited on the cathode side, whereby refined indium can be obtained from CIGS waste. The indium obtained by this method is about 0.76 kg, and the recovery rate of indium reaches 99.94%.

[0061] 2. Gallium separation and recovery steps

[0062] The hydroxide precipitate formed by gallium and the copper-selenium anode slime are leached with hydrochloric acid to obtain hydrochloric acid leaching solution and hydrochlori...

Embodiment 2

[0067] Using 3 kg of CIGS waste as raw material, the composition of the raw material is: 19.8% by weight of copper, 25.4% by weight of indium, 5.7% by weight of gallium, and the balance being selenium.

[0068] 1. CIGS electrolysis steps

[0069] This raw material is put into an indium electrolytic cell, and electrolytic refining is carried out in a sulfuric acid solution.

[0070] The electrolysis conditions are: the electrolyte is a sulfuric acid solution, the pH is 3.0, and the electrolysis temperature is 18°C.

[0071] As a result, indium is electrodeposited on the cathode side, whereby refined indium can be obtained from CIGS waste. The indium obtained by this method is about 0.756 kg, and the recovery rate of indium reaches 99.21%.

[0072] 2. Gallium separation and recovery steps

[0073] The hydroxide precipitate formed by gallium and the copper-selenium anode slime are leached with sulfuric acid to obtain a sulfuric acid leaching solution and a sulfuric acid leachi...

Embodiment 3

[0078] Using 3 kg of CIGS waste as raw material, the composition of the raw material is: 19.8% by weight of copper, 25.4% by weight of indium, 5.7% by weight of gallium, and the balance being selenium.

[0079] 1. CIGS electrolysis steps

[0080] This raw material is put into an indium electrolytic cell, and electrolytic refining is carried out in a hydrochloric acid solution.

[0081] The electrolysis conditions are: the electrolyte is hydrochloric acid solution, the pH is 2.8, and the electrolysis temperature is 25°C.

[0082] As a result, indium is electrodeposited on the cathode side, whereby refined indium can be obtained from CIGS waste. The indium obtained by this method is about 0.758 kg, and the recovery rate of indium reaches 99.48%.

[0083] 2. Gallium separation and recovery steps

[0084] The hydroxide precipitate formed by gallium and the copper-selenium anode slime are leached with sodium hydroxide solution to obtain sodium hydroxide leaching solution and sod...

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Abstract

The invention provides a method for recovering copper, indium, gallium and selenium. The method comprises the following steps of: recovering the indium by carrying out electrolysis by taking a CIGS (Copper Indium Gallium Selenium) waste material as an anode; recovering the gallium by leaching precipitates, namely anode mud and the like, and electrodepositing leach liquor; respectively recovering the selenium and the copper by pickling leached residues, regulating alkali into acid and then respectively adding reducing agents. The method provided by the invention is simple. According to the method, the recovered indium, copper and gallium can be recycled in CIGS target material preparation. The method provided by the invention can be used for respectively separating and recovering gallium, copper and selenium by carrying out the electrolysis by using the CIGS waste material as the anode, directly electrodepositing indium and then using a conventional chemical separation method, thereby being an excellent method capable of extremely easily and efficiently recovering the high-purity indium and gallium. In industrial production, the recovery rate of indium is more than 99%, the grade of refined indium achieves 99.995%, the recovery rate of copper achieves 98.8%, the recovery rate of gallium is more than 98.5%, and the recovery rate of selenium achieves 98%.

Description

technical field [0001] The invention belongs to the field of nonferrous metal metallurgy, in particular to a method for recovering copper indium gallium selenide. Background technique [0002] Copper indium gallium selenide (CIGS) thin-film solar cells have high photoelectric efficiency and have good development potential. Its production methods include vacuum sputtering method, distillation method and non-vacuum coating method. No matter which production method is used, some copper indium gallium selenide waste will be produced during the production process. In addition to heavy metal copper, these waste materials contain It also contains rare metals such as indium, gallium and selenium. In order to facilitate the sustainable utilization of rare metals such as indium, gallium and selenium and heavy metal copper, they need to be separated and recycled separately to facilitate further recycling and ensure the sustainable development of copper indium gallium selenide thin fil...

Claims

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Application Information

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IPC IPC(8): C25C1/22C22B58/00C22B15/00C25C1/12C01B19/02
CPCY02P10/20
Inventor 廖贻鹏刘景文伏东才刘一宁刘敏戴慧敏
Owner ZHUZHOU SMELTER GRP
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