Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A processing method and device for laser forming and cutting sapphire substrate

A technology of laser forming and processing methods, applied in metal processing, laser welding equipment, metal processing equipment and other directions, can solve the problems of low output energy of short-wavelength laser, low activity of working liquid, difficult forming and cutting, etc., to achieve convenient and practical Processing method and device, ingenious design, good processing quality effect

Active Publication Date: 2016-06-15
GUANGDONG UNIV OF TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Laser cutting technology can be used to cut sapphire. In laser dry cutting, picosecond laser is mainly used for cutting at present, and the processing cost is relatively high; when laser is reversed to wet etching, most of them use short-wavelength, low-energy laser and An organic solution with good absorption is used as the working liquid. The laser penetrates the material to be processed and is incident on the back of the material—the liquid contact area. removal, but this method is mostly used in the manufacture of microstructures, and it is difficult to perform shape cutting
The reason why this type of method cannot realize the forming cutting is that (1) the output energy of the short-wavelength laser is low; (2) the activity of the working liquid is not strong; (3) the working liquid cannot overflow in time when the cutting depth increases and is deposited in the sapphire groove; (4) Chip removal is difficult
[0004] Infrared laser has the advantages of high output energy and low cost, but the problem of processing sapphire substrates is that the thermal stress is large and cracks are easy to occur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A processing method and device for laser forming and cutting sapphire substrate
  • A processing method and device for laser forming and cutting sapphire substrate
  • A processing method and device for laser forming and cutting sapphire substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0026] The processing method of laser forming cutting sapphire substrate of the present invention, comprises the following steps:

[0027] 1) the sapphire substrate 1 is fixed on the top of the container 9 on the workbench, and a protective device 4 is set above the sapphire substrate to prevent the liquid from overflowing from the slit to the upper surface of the sapphire substrate when the sapphire substrate is cut through, Affect cutting quality;

[0028] 2) Inject CuSO into container 9 4 Mix solution 7, and make CuSO 4 The mixed solution 7 is in contact with the lower surface of the sapphire substrate 1;

[0029] 3) focus the laser focus on the sapphire substrate 1 and the above CuSO 4 The contact surface of the mixed solution 7;

[0030] 4) An air inlet pipe 11 is placed on one side of the container, and compressed air 12 is continuously fed in during the processing, and the air pressure is 0.1Mpa, so that the micro-nano particles 6 in the solution are in a suspended ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a machining method and device for laser forming cutting of a sapphire substrate. The machining device mainly comprises a protection device, a laser beam, a lens set, a container, a limiting layer, suspended particles and a gas inlet pipe. Working liquid is arranged in a cavity formed in the container, the working liquid generates a sedimentation layer on the lower surface of a base material through lasers, the suspended particles in the liquid at a solid-liquid contact face and the sedimentation layer are combined to enhance the absorption of laser energy so that the melting temperature and the vaporizing temperature of sapphire materials near a laser focus can be reached, in addition, under laser irradiation, a large amount of small bubbles are generated with the suspended particles as the centers, bubble detonation impact force is used for brushing cut grooves, discharging of chippings is facilitated, and therefore the materials can be removed under the combined action of the laser action and the laser irradiation. According to the machining method, the heat effect of the cut grooves is small, a regelation layer in a machined area is omitted, machining quality is high, and forming cutting can be achieved. The machining method is easy to operate, convenient to conduct, practical, high in machining rate and extremely-low in machining cost.

Description

technical field [0001] The invention relates to the technical field of laser processing of hard and brittle materials, and specifically designs a processing method and device for laser forming and cutting sapphire substrates. Background technique [0002] Sapphire single crystal has good comprehensive properties such as high hardness (Mohs hardness of 9), high melting point (2030°C), good wear resistance, high light transmittance, and stable chemical properties at high temperatures (1000°C). It has been widely used in many fields such as electronic information, national defense and medical treatment. At the same time, the application of sapphire to LED has also become the mainstream; As well as the rear lens protection cover and even the outer layer of the iPhone and iWatch screens, sapphire materials have been used, especially for large-size displays, and some high-end watch covers are also made of sapphire materials. These require processing such as cutting, scribing and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B23K26/38B23K26/122B23K26/70
CPCB23K26/082B23K26/083B23K26/123B23K26/38B23K26/40B23K2101/18B23K2103/50C23C14/28
Inventor 谢小柱高勋银魏昕胡伟胡满凤黄显东
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products