Unlock instant, AI-driven research and patent intelligence for your innovation.

Integrated backplane for high heat dissipation solar cell and manufacturing method thereof

A solar cell, high heat dissipation technology, applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as reducing energy utilization, achieve good cooling effect, reduce lamination steps, and improve components. The effect of production efficiency

Active Publication Date: 2017-07-11
ZHONGTIAN PHOTOVOLTAIC MATERIALS
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Studies have shown that when the temperature of silicon cells increases by 1°C, the photovoltaic conversion rate will decrease by 0.4%, which means that the energy utilization rate will be reduced. Therefore, how to cool down the silicon cell panels to increase the photovoltaic conversion rate has become a major issue in the field of solar energy utilization. issues, but there is no mature solution in the industry

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Coating a thermally conductive polyurethane adhesive (containing 30% aluminum oxide by mass) on both sides of an anodized aluminum substrate with a thickness of 250 microns to form a first thermally conductive adhesive layer and a second thermally conductive adhesive layer with a thickness of 10 microns , bake and cure the adhesive at 80-90°C for 10 minutes, then heat-compress polyvinyl fluoride resin with a thickness of 28 microns on the back of anodized aluminum at 110°C to form a weather-resistant barrier layer, and then place 300 at 150°C A micron-thick polypropylene film containing 10% silicon nitride and 20% aluminum oxide is hot-pressed and laminated to form a high thermal conductivity layer on the front of anodized aluminum, in which the size of silicon nitride is 3-5 μm, and the size of aluminum oxide is 5 μm. -10 μm. Then, at 110°C, the ethylene-vinyl acetate copolymer film with a thickness of 150 microns is heat-compressed and laminated on the surface of the ...

Embodiment 2

[0022] Coating a thermally conductive polyurethane adhesive (containing 30% by mass fraction of alumina) on both sides of a polyethylene terephthalate substrate with a thickness of 250 microns to form a first thermally conductive adhesive layer with a thickness of 10 microns and the second thermally conductive adhesive layer, bake and cure the adhesive at 80-90°C for 10 minutes, and then hot-press and compound polyvinylidene fluoride with a thickness of 28 microns on the back of polyethylene terephthalate at 120°C Vinyl resin forms a weather-resistant barrier layer, and then at 150 ° C, a 300-micron-thick polyolefin film containing 20% ​​by mass fraction of graphene is hot-pressed and laminated on the front of polyethylene terephthalate to form a high thermal conductivity layer. The ethylene vinyl acetate copolymer film with a thickness of 100 microns is hot-compressed and laminated on the surface of the polyolefin film at 110°C, cured at 60°C for 24 hours after winding, and an...

Embodiment 3

[0025] Coating a thermally conductive polyurethane adhesive (containing 30% by mass fraction of alumina) on both sides of a polyethylene terephthalate substrate with a thickness of 188 microns to form a first thermally conductive adhesive layer with a thickness of 10 microns and the second thermally conductive adhesive layer, bake and cure the adhesive at 80-90°C for 10 minutes, and then heat-compress polyvinyl fluoride with a thickness of 28 microns on the back of polyethylene terephthalate at 120°C The resin forms a weather-resistant barrier layer, and then a 300-micron-thick ethylene-vinyl acetate copolymer film containing 20% ​​by mass fraction of aluminum nitride and 30% of graphene is hot-compressed and laminated on polyethylene terephthalate at 130°C. A high thermal conductivity layer is formed on the front side, and then a polyvinyl butyral film with a thickness of 100 microns is hot-compressed on the surface of the high thermal conductivity layer at 110°C. After windin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an integrated backplane for high heat dissipation solar cells, which is characterized in that: the weather-resistant barrier layer installed on the back of the base material and bonded to the back of the base material through a first heat-conducting adhesive layer is installed on the The front side of the base material is bonded to the high thermal conductivity layer on the front side of the base material through a thermally conductive adhesive layer, and the protective layer is installed on the high thermal conductivity layer. By adopting the above-mentioned integrated structure, the production efficiency of the module can be improved. Since the back of the substrate is made of the above material and the high thermal conductivity layer on the front of the substrate is added with a high thermal conductivity additive, the thermal conductivity of the backplane is improved, thereby improving the power generation efficiency of the module.

Description

technical field [0001] The invention relates to a high heat dissipation type integrated backplane for solar cells and a manufacturing method thereof, in particular to a high heat dissipation type integrated backplane for solar cells and a manufacturing method thereof, belonging to the field of photovoltaic technology. Background technique [0002] With the depletion of traditional fossil fuels, human beings are constantly seeking new energy alternatives. Solar energy is currently recognized as a green and renewable resource. The photovoltaic (PV) power generation industry has continued to develop rapidly since the 1980s. How to effectively use solar energy It has become a hot spot in the field of new energy technology. According to the "Medium and Long-term Development Plan for Renewable Energy" compiled by the National Development and Reform Commission, the total capacity of photovoltaic power generation in my country will reach 25 million kilowatts by 2020. In the PV module...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/049H01L31/18H01L31/052B32B27/18B32B27/32B32B27/30B32B27/36B32B27/40B32B27/38B32B27/08B32B15/08B32B15/082B32B15/085B32B15/09B32B15/092
CPCB32B15/08B32B15/082B32B15/085B32B15/09B32B15/092B32B27/08B32B27/18B32B27/30B32B27/32B32B27/36B32B27/38B32B27/40H01L31/052H01L31/18Y02E10/50Y02P70/50
Inventor 王同心陈坤刘晓娇王强蒋贤明
Owner ZHONGTIAN PHOTOVOLTAIC MATERIALS