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Bismuth-replacement RIG (rare earth iron garnet) monocrystal and manufacturing method thereof

An iron garnet, bismuth replacement technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as oscillation instability, achieve small environmental impact, excellent crystallinity, and less Pt and Pb content Effect

Active Publication Date: 2014-10-01
GRANOPT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the semiconductor laser is reflected from the end face of the fiber, etc., and returns to the semiconductor laser itself, the oscillation tends to become unstable.

Method used

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  • Bismuth-replacement RIG (rare earth iron garnet) monocrystal and manufacturing method thereof
  • Bismuth-replacement RIG (rare earth iron garnet) monocrystal and manufacturing method thereof
  • Bismuth-replacement RIG (rare earth iron garnet) monocrystal and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] In the Pt crucible, 80% by mass of bismuth oxide (Bi 2 o 3 ), 0.9% by mass of boron oxide (B 2 o 3 ), 9.7% by mass of lead oxide (PbO), 0.013% by mass of calcium oxide (CaO), 7.8% by mass of iron oxide (Fe 2 o 3 ), 0.67% by mass of gallium oxide (Ga 2 o 3 ), 0.65% by mass of terbium oxide (Tb 4 o 7 ) and 0.27% by mass of ytterbium oxide (Yb 2 o 3 ), to prepare melt raw materials.

[0076] Arrange the Pt crucible with the prepared melt raw materials in a precision vertical tubular electric furnace, heat to 1000°C to melt, stir fully, and mix evenly to form a RIG cultivation melt. Next, the temperature of the melt was lowered to 890° C. below the saturation temperature (905° C.), and a (111) garnet single crystal having a diameter of 3 inches, a thickness of 760 μm, and a lattice constant of 1.2497 nm was obtained. [(GdCa) 3 (CaMgZr) 5 o 12 ] One side of the substrate is in contact with the melt surface.

[0077] In an air atmosphere, epitaxial growth was p...

Embodiment 2

[0083] The RIG single crystal was grown under the same conditions as in Example 1 except that the RIG single crystal was grown at 880°C.

[0084] The grown RIG single crystal had a diameter of 3 inches and a film thickness of 530 μm. The crystal growth rate was 0.260 μm / min. As a result of microscopic observation of the entire surface of the grown RIG single crystal, nine crystal defects were confirmed, but no damage such as cracks was found in the RIG.

[0085] The grown RIG single crystal was cut into 11 mm squares, the substrate was removed by grinding, and both sides were mirror-polished by chemical mechanical polishing (CMP) to obtain a RIG single crystal with a thickness of 450 μm.

[0086] The internal pits (crystal defects) of the mirror-polished RIG single crystal of 11 mm square were observed with an infrared microscope, and as a result, no crystal defects were confirmed.

[0087] The composition of the mirror-polished RIG single crystal was analyzed by X-ray fluor...

Embodiment 3

[0090] The RIG single crystal was grown under the same conditions as in Example 1 except that the RIG single crystal was grown at 865°C.

[0091] The grown RIG single crystal had a diameter of 3 inches and a film thickness of 530 μm. The crystal growth rate was 0.260 μm / min. As a result of microscopic observation of the entire surface of the grown RIG single crystal, 10 crystal defects were confirmed, but no damage such as cracks was found in the RIG.

[0092] The grown RIG single crystal was cut into 11 mm squares, the substrate was removed by grinding, and both sides were mirror-polished by chemical mechanical polishing (CMP) to obtain a RIG single crystal with a thickness of 450 μm.

[0093] The internal pits (crystal defects) of the mirror-polished RIG single crystal of 11 mm square were observed with an infrared microscope, and as a result, no crystal defects were confirmed.

[0094] The composition of the mirror-polished RIG single crystal was analyzed by X-ray fluores...

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Abstract

The invention relates to a bismuth-replacement RIG (rare earth iron garnet) monocrystal and a manufacturing method thereof. The RIG is low in expected quantity of Pb and quantity of Pt, is excellent in crystallinity, and is low in impact on environment. The monocrystal is cultivated through a rheotaxial method. The content of Ca of each composition is greater than 0.010 and less than 0.100, the content of Pb of each composition is greater than 0 and less than 0.005, and the content of Pt of each composition is greater than 0 and less than 0.010.

Description

technical field [0001] The present invention relates to a bismuth-substituted rare earth iron garnet single crystal used in a Faraday rotator of an optical isolator, an optical circulator, etc., and a manufacturing method thereof. Background technique [0002] In recent years, there are cases where the development of optical fiber communication and optical measurement is remarkable. In most cases, semiconductor lasers are used as signal sources for optical fiber communication and optical measurement. However, when the semiconductor laser has reflected return light reflected from the end face of an optical fiber, etc., and returns to the semiconductor laser itself again, oscillation tends to become unstable. Therefore, an optical isolator is provided on the output side of the semiconductor laser to block the reflected return light and stabilize the oscillation of the semiconductor laser. [0003] An optical isolator is mainly composed of a polarizer, an analyzer, a Faraday ...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B19/02
Inventor 中川悟白井一志
Owner GRANOPT
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