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A zno/α-si nanometer radial heterojunction solar cell and its preparation method

A solar cell and heterojunction technology, which is applied in the field of solar cells, can solve problems that limit the wide application of solar cells, and achieve the effects of improving light absorption capacity, conversion efficiency, and transport capacity

Active Publication Date: 2016-10-19
BEIJING UNIV OF TECH
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Problems solved by technology

[0003] Since the application of the first silicon solar cell in 1954, solar cells have gone through the development of the first generation of monocrystalline silicon solar cells and the second generation of thin film cells, but the current high cost of power generation still severely limits the further widespread application of solar cells, so Reducing the cost of solar cells has become the focus of current research

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  • A zno/α-si nanometer radial heterojunction solar cell and its preparation method
  • A zno/α-si nanometer radial heterojunction solar cell and its preparation method
  • A zno/α-si nanometer radial heterojunction solar cell and its preparation method

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Embodiment 1

[0025] refer to figure 1 , figure 1 A flowchart showing a method for preparing a ZnO / α-Si nanometer radial heterojunction solar cell according to an embodiment of the present invention.

[0026] (1) In step 101, firstly, the quartz substrate 201 is cleaned by ultrasonic cleaning with concentrated acetone for 15 minutes, then ultrasonic cleaning with alcohol and deionized water for 10-20 times respectively, and drying with nitrogen gas.

[0027] (2) Next in step 102, an AZO film 202 is grown on the surface of the quartz substrate 201, such as figure 2 shown. Preferably, the composition of the AZO thin film is that the Al doping concentration is 2%-5%. The method for growing the AZO thin film on the surface of the quartz substrate includes but not limited to the PLD method. The process conditions for preparing the AZO thin film by PLD are: the background vacuum is high at 10 -4 Pa, substrate temperature 280-370°C, pressure 0.5Pa-3Pa, PLD pulse laser energy 200-300mj / pulse, ...

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Abstract

The invention discloses a ZnO / alpha-Si nanometer radial heterojunction solar battery and a preparation method thereof, and belongs to the field of solar batteries. The preparation method comprises the following steps: cleaning quartz glass; enabling a single layer of AZO film to grow on the quartz glass; enabling a ZnO seed crystal layer to grow on the AZO film; enabling ZnO nanorods to grow on the ZnO seed crystal layer substrate by adopting a hydrothermal method; enabling P-type alpha-Si to grow on the ZnO nanorods; depositing an Ag front electrode on the AZO film by magnetron sputtering; printing an Al back electrode on the P-type alpha-Si; and sintering to finish the preparation of the battery. The battery exhibits low reflectivity and good electrode contact performance, and a transparent electric conduction electrode exhibits high transmittance and electric conductivity, and the efficiency of the battery can be effectively improved.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a novel high-efficiency solar cell prepared by a ZnO nanostructure and a transparent conductive film AZO. Background technique [0002] In recent years, the environmental problems of energy shortage and global warming have become increasingly serious, and human beings have an unprecedented demand for clean and renewable energy. Photovoltaic solar energy is an important renewable energy source, which has many advantages such as extensive energy sources, less geographical restrictions, and safety and reliability. [0003] Since the application of the first silicon solar cell in 1954, solar cells have gone through the development of the first generation of monocrystalline silicon solar cells and the second generation of thin film cells, but the current high cost of power generation still severely limits the further widespread application of solar cells, so Reducing the cost of solar cells ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/074H01L31/0352H01L31/0224
CPCH01L31/022483H01L31/02363H01L31/0352H01L31/074H01L31/18H01L31/1884Y02E10/50Y02P70/50
Inventor 严辉张悦张铭汪浩王波王如志侯育冬朱满康宋雪梅刘晶冰
Owner BEIJING UNIV OF TECH