Palladium silicon nanowire room temperature infrared detector and manufacturing method thereof
An infrared detector and silicon nanowire technology, applied in the field of infrared detectors, can solve the problems of large volume, disadvantageous device miniaturization, complex liquid nitrogen refrigeration structure, etc., and achieve the effects of improving performance and improving signal-to-noise ratio.
Inactive Publication Date: 2014-11-12
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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[0002] The inventor had previously filed an invention patent application (application number: 201410081602.4) with the subject name of "platinum silicon nanowire infrared detector and its manufacturing method" Although the performance of the infrared detector obtained by this technology has been improved, it needs to be refrigerated with liquid nitrogen when it works, and the structure of liquid nitrogen refrigeration is complicated and the volume is large, which is not conducive to the miniaturization of the device
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[0022] A palladium-silicon nanowire infrared detector at room temperature, comprising an anti-reflection film layer 1, a P-type epitaxial silicon substrate layer 2, a photosensitive layer 3, and SiO 2 Optical cavity dielectric layer 4 and aluminum mirror reflection film layer 5; said antireflection film layer 1, P-type epitaxial silicon substrate layer 2, photosensitive layer 3, SiO 2 The optical cavity dielectric layer 4 and the aluminum mirror reflection film layer 5 are sequentially stacked together to form an infrared detector;
[0023] The innovation is that: the photosensitive layer 3 is formed by palladium-silicon nanowire array; the working mode of the infrared detector is back-illuminated; the infrared detector works at room temperature.
[0024] Further, the palladium silicon nanowire room temperature infrared detector is also provided with an output diode 6 , a P+ channel resistance 7 , an electrode lead 8 , a P+ diffusion ground 9 and an N guard ring 10 .
[0025]...
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The invention discloses a palladium silicon nanowire room temperature infrared detector which comprises a reflection-resisting film layer, a P type epitaxial silicon substrate layer, a photosensitive layer, an SiO2 light cavity substrate layer and an aluminum mirror reflection film layer. The reflection-resisting film layer, the P type epitaxial silicon substrate layer, the photosensitive layer, the SiO2 light cavity substrate layer and the aluminum mirror reflection film layer are sequentially stacked to form the infrared detector. The palladium silicon nanowire room temperature infrared detector is characterized in that the photosensitive layer is composed of silicon nanowire arrays, the working mode of the infrared detector is a back lighting mode, and the infrared detector works in a room-temperature environment. The palladium silicon nanowire room temperature infrared detector has the advantages that a palladium silicon nanowire manufacturing technology is adopted, the performance of the infrared detector is improved, the signal to noise ratio of the Pd2Si / P-Si infrared detector is greatly improved, and the detector can work in the room-temperature environment.
Description
technical field [0001] The invention relates to an infrared detector, in particular to a palladium-silicon nanowire room-temperature infrared detector and a manufacturing method thereof. Background technique [0002] The inventor had previously filed an invention patent application (application number: 201410081602.4) with the subject name of "platinum silicon nanowire infrared detector and its manufacturing method". Although the performance of the infrared detector obtained by this technology has been improved, its When working, liquid nitrogen is needed for refrigeration, and liquid nitrogen refrigeration has a complex structure and a large volume, which is not conducive to the miniaturization of the device. Contents of the invention [0003] Aiming at the problems in the background technology, the present invention proposes a palladium-silicon nanowire room-temperature infrared detector, including an anti-reflection film layer, a P-type epitaxial silicon substrate lay...
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IPC IPC(8): H01L31/101H01L31/18H01L31/0352
CPCB82Y30/00B82Y40/00H01L31/0352H01L31/109H01L31/18Y02P70/50
Inventor 李华高李仁豪龙飞钟四成
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP