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Yttrium iron garnet film and preparation method thereof

A technology of yttrium-iron garnet and thin film, which is applied in the field of yttrium-iron garnet thin film and its preparation, can solve the problems of inability to accurately control the stoichiometric ratio, high requirements for preparation conditions, expensive physical method equipment, etc., and achieve excellent magnetic properties, Low environmental pollution and low toxicity

Active Publication Date: 2014-12-10
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation of YIG thin films mostly adopts physical methods. The disadvantage is that the stoichiometric ratio cannot be accurately controlled, and the performance of the obtained thin films is greatly reduced, and the surface roughness is high. At the same time, the physical method equipment is expensive and requires high preparation conditions.
At present, there are few reports on the preparation of YIG thin films by chemical solution method, and in some reported methods, solvents are used to prepare yttrium iron garnet thin films, and most of them use toxic solvents, which are very polluting to the environment.

Method used

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  • Yttrium iron garnet film and preparation method thereof
  • Yttrium iron garnet film and preparation method thereof
  • Yttrium iron garnet film and preparation method thereof

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preparation example Construction

[0048] The preparation of described yttrium iron garnet thin film comprises following specific steps:

[0049] a) Preparation of precursor solution

[0050] First, the solute yttrium oxide and ferric nitrate are dissolved in a mixed solvent of acetic acid and deionized water according to the ratio, heated to 60-80°C to dissolve completely, and then acetylacetone is added for complexation, and the concentration of yttrium in the mixed solution is controlled at 0.15- 0.75M / L; after the solution is completely reacted, it is allowed to stand at room temperature for 48-72 hours, and then filtered with a 0.2-micron microporous membrane to obtain a stable yttrium-iron-garnet (YIG) precursor solution;

[0051] b) Film preparation

[0052] The prepared precursor solution was added dropwise at a uniform speed on the clean and high-speed rotating substrate, and the solvent evaporated rapidly to obtain a gel film; the gel film was placed in an annealing furnace for segmental heat treatme...

Embodiment 1

[0062] a) cleaning of the silicon substrate;

[0063] First place the silicon wafer in an acetone solution for 10 minutes of ultrasonic cleaning, then place it in an ethanol solution for 10 minutes of ultrasonic cleaning, and finally in deionized water for 10 minutes of ultrasonic cleaning, the substrate is cleaned and dried for later use;

[0064] b) Preparation of precursor solution

[0065] First, dissolve yttrium oxide and ferric nitrate with a molar ratio of Y:Fe of 3:5 in a mixed solvent of acetic acid and deionized water, heat to 60-80°C to completely dissolve the solute, and finally add acetylacetone complexing agent and continue heating Make the solution react completely, the ratio of acetic acid, acetylacetone and water is 30:15:5, the concentration of yttrium element in the solution is 0.15M / L, place the obtained deep red solution at room temperature for 48-72h; use a 0.2 micron microporous filter Membrane filtration solution can obtain stable YIG yttrium iron garn...

Embodiment 2

[0069] The difference between this embodiment and embodiment 1 is that: finally annealing is performed at a high temperature of 750° C. for 30 minutes, and the rest of the content is exactly the same as that of embodiment 1.

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Abstract

The invention discloses a yttrium iron garnet film and a preparation method thereof. The method comprises the following steps: 1) dissolving yttrium oxide and ferric nitrate in a mixed solvent consisting of acetic acid and water to obtain a mixed solution; 2) adding acetylacetone into the mixed solution to react; 3) after standing the mixed solution, filtering out precipitates by virtue of a microfiltration membrane to obtain a yttrium iron garnet precursor solution; 4) dropwise adding the yttrium iron garnet precursor solution on a substrate to form a gel film; 5) firstly, preserving heat for the gel film and then carrying out pyrolysis treatment; and 6) annealing the gel film subjected to pyrolysis treatment.

Description

technical field [0001] The invention belongs to the technical field of magnetic film preparation, and in particular relates to a yttrium iron garnet film and a preparation method thereof. Background technique [0002] As a magnetic functional material, yttrium iron garnet thin film is widely used in the field of microwave tuning due to its narrow ferromagnetic resonance line width, small magnetocrystalline anisotropy, small microwave magnetic loss, and large tuning range, especially in the field of magnetoelectric composite tuning. On the one hand, a large number of ferromagnetic phases selected as magnetoelectric composites can be tuned together with ferroelectric materials, which can increase the tuning range and reduce the tuning loss in the microwave range. Therefore, exploring the preparation of high-quality YIG thin films has great significance for the field of magnetoelectric composite microwave tuning. important research significance. In addition, the Curie temperat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/26C04B35/624
Inventor 董显林郭新陈莹王根水
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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