Organic light-emitting device and preparation method thereof
An electroluminescent device and electroluminescent technology, applied in the field of lighting, can solve the problems of high toxicity and great harm, and achieve the effects of being conducive to preservation, wide-ranging sources and improving light efficiency
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[0036] The embodiment of the present invention also provides a method for preparing the above-mentioned organic electroluminescent device 100, including the following steps:
[0037] In step S1, a substrate 10 is provided, and the substrate 10 is ultrasonically cleaned in deionized water containing detergent. After cleaning, it is cleaned with isopropanol and acetone in the ultrasonic wave for 20 minutes, and dried with nitrogen gas.
[0038] Step S2, when the degree of vacuum is 10 -5 ~10 -3 In the vacuum coating system of Pa, the anode layer 20 is prepared on the surface of the substrate 10 by magnetron sputtering.
[0039] Step S3, when the degree of vacuum is 10 -5 ~10 -3 In the vacuum coating system of Pa, a hole injection layer 30, a hole transport layer 40, a light emitting layer 50, an electron transport layer 60, an electron injection layer 70, and a cathode layer 80 are sequentially evaporated on the anode layer 20, wherein the electron The injection layer 70 is ...
Embodiment 1
[0042] The structure of the organic electroluminescent device is: substrate / ITO / CuPc / NPB / Ir(ppy) 3 :TPBi / TPBi / C 17 h 35 COOK / Ag.
[0043] The preparation method of organic electroluminescent device comprises the following steps:
[0044] In step S1, a substrate is provided, and the substrate is ultrasonically cleaned in deionized water containing detergent. After cleaning, it is cleaned with isopropanol and acetone in ultrasonic for 20 minutes, and dried with nitrogen.
[0045] Step S2, when the degree of vacuum is 10 -4 In Pa's vacuum coating system, the anode layer is prepared on the surface of the substrate by magnetron sputtering. The material of the anode layer is ITO, the thickness is 100nm, and the sputtering speed is 0.5nm / s.
[0046] Step S3, when the degree of vacuum is 10 -4 In the vacuum coating system of Pa, the hole injection layer is prepared by evaporation on the anode layer. The material of the hole injection layer is CuPc, and the thickness is 20nm;
[...
Embodiment 2
[0055] The structure of the organic electroluminescent device is: substrate / AZO / ZnPc / TPD / Ir(MDQ) 2 (acac):NPB / Bphen / C 13 h 27 SO 3 Na / Al.
[0056] The preparation method of organic electroluminescent device comprises the following steps:
[0057] In step S1, a substrate is provided, and the substrate is ultrasonically cleaned in deionized water containing detergent. After cleaning, it is cleaned with isopropanol and acetone in ultrasonic for 20 minutes, and dried with nitrogen.
[0058] Step S2, when the degree of vacuum is 10 -3 In Pa's vacuum coating system, the anode layer is prepared on the surface of the substrate by magnetron sputtering. The material of the anode layer is AZO, the thickness is 70nm, and the sputtering speed is 0.5nm / s.
[0059] Step S3, when the degree of vacuum is 10 -3 In the vacuum coating system of Pa, the hole injection layer is prepared by evaporation on the anode layer. The material of the hole injection layer is ZnPc, and the thickness is 1...
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