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A method for preparing cross-shaped zinc oxide nanowire array

A technology of zinc oxide nanowires and nanowire arrays, which is applied in the field of preparing cross-shaped zinc oxide nanowire arrays, to achieve uniform appearance and good repeatability

Inactive Publication Date: 2015-10-21
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the growth of intersecting ZnO nanowire arrays by hydrothermal method has not been reported yet.

Method used

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  • A method for preparing cross-shaped zinc oxide nanowire array
  • A method for preparing cross-shaped zinc oxide nanowire array
  • A method for preparing cross-shaped zinc oxide nanowire array

Examples

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example 1

[0028] Using molecular beam epitaxy to prepare a very thin ZnO film on the c-plane sapphire substrate as a seed layer for growing ZnO nanostructures, and then hydrothermally grow a cross-type ZnO nanowire array on the film, which is characterized by , The crossed ZnO nanowire array is obtained under the following process conditions:

[0029] First, a very thin ZnO film is prepared on a c-plane sapphire substrate using molecular beam epitaxy: high-purity metallic zinc 6N (99.9999%) is used as the Zn source and 5N (99.999%) oxygen is used as the O source. Specific growth parameters: the growth temperature is 800℃, the vacuum degree of the growth chamber is 3×10 -3 Pa, the oxygen radio frequency power is stable at 300 W, and the oxygen flow rate is 1 SCCM.

[0030] Then grow a cross-type ZnO nanowire array again on the c-plane sapphire plated with a thin layer of ZnO (obtained by molecular beam epitaxy): equimolar hexamethylenetetramine and zinc acetate are used as the reaction source...

example 2

[0033] Using molecular beam epitaxy to prepare a very thin ZnO film on the c-plane sapphire substrate as a seed layer for growing ZnO nanostructures, and then hydrothermally grow a cross-type ZnO nanowire array on the film, which is characterized by , The crossed ZnO nanowire array is obtained under the following process conditions:

[0034] First, a very thin ZnO film is prepared on a c-plane sapphire substrate using molecular beam epitaxy: high-purity metallic zinc 6N (99.9999%) is used as the Zn source and 5N (99.999%) oxygen is used as the O source. Specific growth parameters: the growth temperature is 800℃, the vacuum degree of the growth chamber is 3×10 -3 Pa, the oxygen radio frequency power is stable at 300 W, and the oxygen flow rate is 1 SCCM.

[0035] Then grow a cross-type ZnO nanowire array again on the c-plane sapphire plated with a thin layer of ZnO (obtained by molecular beam epitaxy): equimolar hexamethylenetetramine and zinc acetate are used as the reaction source...

example 3

[0038] Using molecular beam epitaxy to prepare a very thin ZnO film on the c-plane sapphire substrate as a seed layer for growing ZnO nanostructures, and then hydrothermally grow a cross-type ZnO nanowire array on the film, which is characterized by , The crossed ZnO nanowire array is obtained under the following process conditions:

[0039] First, a very thin ZnO film is prepared on a c-plane sapphire substrate using molecular beam epitaxy: high-purity metallic zinc 6N (99.9999%) is used as the Zn source and 5N (99.999%) oxygen is used as the O source. Specific growth parameters: the growth temperature is 800℃, the vacuum degree of the growth chamber is 3×10 -3 Pa, the oxygen radio frequency power is stable at 300 W, and the oxygen flow rate is 1 SCCM.

[0040] Then grow a cross-type ZnO nanowire array again on the c-plane sapphire plated with a thin layer of ZnO (obtained by molecular beam epitaxy): equimolar hexamethylenetetramine and zinc acetate are used as reaction sources, a...

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Abstract

The invention discloses a method for preparing a crossed zinc oxide nanowire array, which comprises the following steps: (1) preparing a ZnO film on a substrate by molecular beam epitaxy as a seed crystal layer for growing the ZnO nano structure; and (2) growing the crossed zinc oxide nanowire array on the film by a hydrothermal process. A very thin ZnO film is coated by vaporization by the molecular beam epitaxy technique to be used as the seed crystal layer for preparing the nano structure, and no metal is used as the catalyst to avoid introducing impurities; the crossed ZnO nanowire array prepared by the method has uniform appearance and can be subjected to large-area growth; and the hydrothermal process can be utilized to easily prepare the crossed ZnO nanowire array, and has favorable repetitiveness.

Description

Technical field [0001] The present invention involves a method of preparing cross -type zinc oxide nano -wire arrays, especially for a low -cost and preparation method that can be used for large -scale growth with unused metal catalysts to prepare a cross -type nano -nano -wire array. Background technique [0002] At present, semiconductor materials are widely used in photocatalytic, osteitted sensors, light -emitting diode, detectors, solar cells and other fields.Compared with other semiconductor materials, ZNO has the following advantages: one -dimensional ZNO nano structure is easy to prepare, rich in nano -appearance structure, low cost, non -toxicity, and relatively large prohibition bandwidth.Due to the antibacteriality, high activity, high chemical stability, and large quantum yield of ZNO materials, it makes it a good catalyst material.In recent years, many research teams have prepared a variety of shapes of Zno nano -structures through chemical gas deposition, electroche...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y40/00
Inventor 丁梦徐锡金邓晓龙邵明辉黄金昭
Owner UNIV OF JINAN