High-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor

Abstract

The invention relates to a high-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor. Two independently-controlled gate electrodes including the H-shaped auxiliary control gate electrode and the gate electrode are adopted, the doping concentration of a device is guaranteed to improve the mobility ratio, the device mobility ratio reduction and the device stability reduction caused by strengthening of the random scattering effect under the high doping concentration is avoided, and meanwhile the resistance of source and drain areas is effectively reduced through the H-shaped auxiliary control gate electrode, so that the contradictions that the source and drain resistance will be increased if the doping concentration of a channel of a common junction-free transistor is excessively low, and the device mobility ratio reduction and the device stability reduction will be caused if the doping concentration is excessively high are overcome; meanwhile, U-shaped monocrystalline silicon serves a channel part of the device; compared with a common plane structure, on the premise that the chip area is not increased additionally, the effective channel length is obviously increased to reduce the short channel effect of the device under the deep nanoscale, and therefore the high-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor is suitable for application and popularization.

Description

technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and in particular relates to a high-integration H-shaped source-drain-gate auxiliary control U-shaped channel high-mobility junction-free transistor structure suitable for ultra-high integrated integrated circuit manufacturing. Background technique [0002] The basic unit of integrated circuits, MOSFETs, transistors, with the continuous reduction in size, need to achieve multiple orders of magnitude concentration differences within a distance of several nanometers to form extremely steep source and drain PN junctions. Such a concentration gradient is essential for doping And heat treatment process has extremely high requirements. The above problems can be effectively solved by junction-free field-effect transistors fabricated on SOI wafers. Junction-free transistors adopt multi-subconduction, and the source, drain and channel regions of the device have the same h...

AI Technical Summary

Problems solved by technology

However, such a highly doped channel will lead to a significant decrease in the mobility of the device, and the random scattering of impurities will seriously affect the reliability of the device.

In order to improve the mobility and reliability of junctionless devices, it is necessary to reduce the doping concentration of the silicon film, but the reduction of the doping concentration will increase the source-drain resistance and affect the turn-on characteristics of the device

In addition, the common transistor structure based on the planar structure, with the continuous shortening of the channel length, the short channel effect is gradually enhanced, and the device is difficult to turn off

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