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AlGaAs/GaInAs/Ge continuous spectrum solar battery

A solar cell and spectrum technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of difficult battery material quality and low yield, and achieve the effect of improving photoelectric conversion efficiency and mature technology

Inactive Publication Date: 2015-01-21
BEIJING UNIV OF TECH
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AI Technical Summary

Problems solved by technology

Although the structure of current matching and lattice mismatch can slightly improve the efficiency of stacked solar cells, but because the lattice of the epitaxial layer is closely matched with the substrate, the quality of the cell materials is difficult to guarantee, and the yield is low.

Method used

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  • AlGaAs/GaInAs/Ge continuous spectrum solar battery
  • AlGaAs/GaInAs/Ge continuous spectrum solar battery

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Embodiment 1

[0021] Embodiment one: see attached figure 1 Shown, the preparation method of AlGaAs / GaInAs / Ge continuous spectrum solar cell comprises the following steps:

[0022] S1 uses a p-type Ge substrate 1 with a thickness of 130-230un and a doping concentration of 1×10 17 cm -3 -1×10 18 cm -3 , as the base layer of Ge bottom battery.

[0023] Diffusion of P on the surface of the S2Ge substrate forms an n-type GeEmitter layer 2 to obtain a bottom cell. The thickness of the Emitter layer is 60-200nm, and the doping concentration is 6×10 18 cm -3 -3×10 19 cm -3 .

[0024] S3 growth of 200-300nm n-type GaInP 2 Window layer 3, the doping concentration is 5×10 18 cm -3 .

[0025] S4 growth degenerate n-type doping concentration greater than 1×10 19 cm -3 and an AlGaAs layer 4 with a thickness of 10nm to form a tunnel junction to connect the middle cell and the bottom cell.

[0026] S5 grows degenerate p-type doping greater than 6×10 19 cm -3 , a GaInP layer 5 with a thickn...

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Abstract

The invention provides an AlGaAs / GaInAs / Ge continuous spectrum solar battery which comprises a bottom battery, a middle battery, a top battery and tunnel junctions for connecting all the sub batteries. The bottom battery is a Gepn-junction battery. A middle battery Base layer is composed of a strain Ga1-xInxAs quantum well formed by gradually changing of the GaIn0.01As in a lattice matching mode and In components. The top battery is a Base layer which is of an AlGaAs structure formed by gradually changing of the Al components. The short circuit currents of all the sub batteries of a multijunction solar battery are the same, and the sub batteries are connected through the tunnel junctions. Meanwhile, all the sub batteries and the tunnel junctions among the sub batteries achieve lattice matching with a substrate. The sub batteries and the tunnel junctions among the sub batteries are formed by growing on the substrate through MOCVD. According to a battery shell, the photon energy at different wave bands of the sunlight is fully utilized, and the photoelectric conversion efficiency of the solar battery is improved.

Description

technical field [0001] The invention relates to a high-efficiency multi-junction solar cell, which belongs to the technical field of semiconductor materials. Background technique [0002] With the development of modern industry, the global energy crisis and air pollution problems have become increasingly prominent. As an ideal renewable energy source, more and more countries have paid attention to solar energy. Carrying out solar cell research and developing the photovoltaic power generation industry will contribute to the sustainable development of national energy. is of great significance. At present, the main problems faced by solar cells are low photoelectric conversion efficiency and low cost performance, which cannot meet the needs of large-scale civilian use. Among commercial solar cells, monocrystalline silicon and polycrystalline silicon cells account for about 90% of the market share. The conversion efficiency of commercial monocrystalline silicon cells is about ...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0725H01L31/074H01L31/0328H01L31/18
CPCH01L31/0328H01L31/035236H01L31/035272H01L31/0725H01L31/074H01L31/1848Y02E10/544Y02P70/50
Inventor 王智勇张杨杨光辉陈丙振尧舜张奇灵
Owner BEIJING UNIV OF TECH
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