Light-emitting diode with distributed electric conducting hole structure and manufacturing method thereof

A technology for light-emitting diodes and manufacturing methods, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of difficult particle identification by visual inspection cores, low light output efficiency, and impact on product reputation, etc., to improve product yield, improve Luminous efficiency, reducing the effect of invalid injection

Active Publication Date: 2015-01-21
YANGZHOU CHANGELIGHT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional reflective layer structure is composed of a dielectric film and a metal layer with uniform openings on the entire surface. Due to the uniform distribution of conductive holes on the P surface, the current on the P surface can flow uniformly to the active area after injection, but due to the shading effect of the N surface electrode, As a result, the current injection in the conductive hole under the electrode becomes invalid injection, resulting in low light extraction efficiency
In addition, the traditional evenly

Method used

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  • Light-emitting diode with distributed electric conducting hole structure and manufacturing method thereof
  • Light-emitting diode with distributed electric conducting hole structure and manufacturing method thereof
  • Light-emitting diode with distributed electric conducting hole structure and manufacturing method thereof

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Embodiment Construction

[0025] One, such as figure 1 and 2 Shown is a schematic view of the structure of a preferred example of the present invention during the manufacturing process, and the manufacturing steps are as follows:

[0026] 1. If figure 1 As shown, a transition layer 102, an N-GaInP cut-off layer 103, an N-GaAs ohmic contact layer 104, an N-AlGaInP roughening layer 105, and an N-AlGaInP current spreading layer 106 are sequentially grown on a temporary GaAs substrate 101 by using MOCVD equipment. , N-AlGaInP confinement layer 107, MQW multiple quantum well active layer 108, P-AlGaInP confinement layer 109, buffer layer 110, P-GaP current spreading layer 111.

[0027] Wherein the N-GaAs ohmic contact layer 104 preferably has a thickness of 40nm and a doping concentration of 1×10 19 cm -3 Above, the doped impurity element is Si to ensure that the N surface has a good current spreading ability; the P-GaP current spreading layer 111 preferably has a thickness of 2000nm and a doping conc...

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Abstract

The invention provides a light-emitting diode with a distributed electric conducting hole structure and a manufacturing method of the light-emitting diode, and belongs to the technical field of photoelectrons. According to the method, a mirror surface reflecting layer is manufactured on an epitaxial wafer, a substrate is bonded on the mirror surface reflecting layer, a base plate, a buffering layer and a cut-off layer on the epitaxial wafer are removed, an N-GaAs ohmic contact layer is exposed, and then a graphical N-GaAs ohmic contact layer, an extension electrode, a main electrode and a back electrode are manufactured. According to the light-emitting diode, the mirror surface reflecting layer is formed by all through holes in a SiO2 electric conducting hole layer and the mirror surface layer, and AuZn in a SiO2 hole and a P-GaP current extension layer form good electricity contact; as no electric conducting holes are formed in a cutting channel and schottky junctions are formed below the electrodes, ineffective injection of currents is reduced, and the light-emitting efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, in particular to the technical field of manufacturing AlGaInP quaternary light-emitting diodes. Background technique [0002] Quaternary AlGaInP is a semiconductor material with direct wide bandgap, which has been widely used in the preparation of various optoelectronic devices. Since the light-emitting band of the material can cover the red to yellow-green bands of visible light, the high-brightness light-emitting diodes made of visible light have attracted extensive attention. Quaternary AlGaInP red high-brightness light-emitting diodes have been widely used in many aspects such as outdoor displays, traffic lights, and car lights. Compared with AlGaInP LED chips with ordinary structures, high-brightness AlGaInP chips use bonding technology to realize substrate replacement, and use silicon substrates with good thermal performance (the thermal conductivity of silicon is about 1.5W / K....

Claims

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Application Information

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IPC IPC(8): H01L33/10
CPCH01L33/005H01L33/10H01L2933/0008
Inventor 白继锋马祥柱杨凯陈亮李俊承陈宝张银桥
Owner YANGZHOU CHANGELIGHT
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