Preparation method of black-edge-free high-efficiency polycrystalline silicon ingot

A technology for polycrystalline silicon ingots without black borders, applied in polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve problems such as high production costs, easy sticking, and large black border width, and achieve photoelectric conversion efficiency. The effect of reducing manufacturing costs and reducing the proportion of low-efficiency leakage

Active Publication Date: 2015-02-04
江苏美科太阳能科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is to aim at the large width of the black side of the ordinary crucible, the low utilization rate of the single ingot silicon material of the enlarged crucible, the high production cost, the high-purity crucibl

Method used

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Examples

Experimental program
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Example Embodiment

[0032] Example 1

[0033] A method for preparing high-efficiency polycrystalline silicon ingots without black edges, the method steps are as follows:

[0034] 1) Prepare high-purity quartz sand slurry, using high-purity quartz sand for single crystal crucible with a particle size of 100 mesh and purity of 99.995% and high-purity quartz sand for polycrystalline crucible with a particle size of 250 mesh and purity of 99.99%. :1 weight ratio is mixed uniformly to obtain quartz sand; the content of Fe element is 4ppm deionized water as the binder; then the quartz sand and the binder are mixed according to the weight ratio of 1:2 and uniformly stirred to obtain high purity quartz Mortar

[0035] 2)Prepare high-purity fine mortar, use a polycrystalline crucible with a particle size of 600 mesh and a purity of 99.99%, mix high-purity quartz sand and binder water at a weight ratio of 1:2, and mix well to obtain high-purity fine mortar material;

[0036] 3) Prepare silicon nitride slurry, mi...

Example Embodiment

[0044] Example two

[0045] A method for preparing high-efficiency polycrystalline silicon ingots without black edges, the method steps are as follows:

[0046] 1) Prepare high-purity quartz sand slurry, using high-purity quartz sand for single crystal crucible with a particle size of 150 mesh and purity of 99.995% and high-purity quartz sand for polycrystalline crucible with a particle size of 400 mesh and purity of 99.99%. : The weight ratio of 5 is mixed uniformly to obtain quartz sand; the content of Fe element is 4.5ppm deionized water as the binder; the quartz sand and the binder are mixed at a weight ratio of 1:4, and the mixture is uniformly stirred to obtain high purity Quartz sand slurry;

[0047] 2) Preparing high-purity fine mortar, using a polycrystalline crucible with a particle size of 600 mesh and a purity of 99.99%, mixing high-purity quartz sand and binder water in a weight ratio of 1:4, and mixing uniformly to obtain high-purity fine mortar material;

[0048] 3) P...

Example Embodiment

[0056] Example three

[0057] A method for preparing high-efficiency polycrystalline silicon ingots without black edges, the method steps are as follows:

[0058] 1) Preparing high-purity quartz sand slurry, using high-purity quartz sand for single crystal crucible with a particle size of 130 mesh and purity of 99.995% and high-purity quartz sand for polycrystalline crucible with a particle size of 330 mesh and purity of 99.999%. :4.5 The weight ratio is mixed uniformly to obtain quartz sand; the content of Fe element is 4.5ppm deionized water as the binder; the quartz sand and the binder are mixed at a weight ratio of 1:3.5 and mixed evenly to obtain high purity Quartz sand slurry;

[0059] 2) Prepare high-purity fine mortar, use a polycrystalline crucible with a particle size of 660 mesh and a purity of 99.99%. Mix the high-purity quartz sand and the binder water at a weight ratio of 1:3, and mix well to obtain high-purity fine mortar. material;

[0060] 3) Prepare silicon nitride...

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Abstract

The invention discloses a preparation method of a black-edge-free high-efficiency polycrystalline silicon ingot, which comprises the following steps: applying a high-purity quartz sand slurry on the inner side surface of an increased quartz crucible for polycrystalline cast ingots to form a high-purity coating; applying a high-purity fine sand slurry to form a fine sand coating, and carrying out high-temperature quick sintering for 1 hour; spraying a silicon nitride slurry on four walls in the crucible with the two high-purity coatings to form a high-purity silicon nitride coating as a mold release agent; laying a fine silicon material layer on the bottom of the crucible with the silicon nitride coating as a seed crystal layer, and putting a primary silicon material on the seed crystal layer; and opening the heat insulation cage to the height of 5-6cm in the melting stage, testing the residual height of the silicon material with a quartz rod, quickly cooling when the residual height is 5-6mm, entering the crystal growth stage, and controlling the temperature gradient in the crucible to form vertical temperature gradient in the crucible from bottom to top so as to induce the growth of the molten silicon material by utilizing the seed crystal layer laid on the bottom, thereby obtaining the black-edge-free high-efficiency polycrystalline silicon ingot.

Description

technical field [0001] The invention relates to a method for preparing a high-efficiency polycrystalline silicon ingot without black edges, and belongs to the field of polycrystalline silicon ingot casting. Background technique [0002] At present, the preparation method of polycrystalline silicon ingots is mainly carried out by using the directional solidification system provided by GT Solar, which usually includes steps such as heating, melting, crystal growth, annealing and cooling. During the solidification and crystal growth process, the temperature of the top and the opening of the side insulation cover are controlled so that the molten silicon liquid can obtain sufficient supercooling at the bottom of the crucible to solidify and crystallize. However, due to the isotropic structure at the bottom of the crucible in the initial stage of crystal growth, the initial nucleation cannot be effectively controlled during the crystallization of silicon liquid, and there are une...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
Inventor 刘明权王禄宝
Owner 江苏美科太阳能科技股份有限公司
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