Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of black-edge-free high-efficiency polycrystalline silicon ingot

A technology for polycrystalline silicon ingots without black borders, applied in polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve problems such as high production costs, easy sticking, and large black border width, and achieve photoelectric conversion efficiency. The effect of reducing manufacturing costs and reducing the proportion of low-efficiency leakage

Active Publication Date: 2015-02-04
江苏美科太阳能科技股份有限公司
View PDF6 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is to aim at the large width of the black side of the ordinary crucible, the low utilization rate of the single ingot silicon material of the enlarged crucible, the high production cost, the high-purity crucible is easy to stick to the crucible, and no matter which method is used, no black can be achieved. Problems in the production of polycrystalline silicon ingots with edges, and provide a method for preparing polycrystalline silicon ingots with no black edges and high efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A method for preparing a high-efficiency polycrystalline silicon ingot without black edges, the method steps are as follows:

[0034] 1) Prepare the high-purity quartz sand slurry, using high-purity quartz sand for single crystal crucibles with a particle size of 100 mesh and a purity of 99.995% and high-purity quartz sand for polycrystalline crucibles with a particle size of 250 mesh and a purity of 99.99%. : 1 weight ratio to mix evenly to obtain quartz sand; use deionized water with a Fe content of 4ppm as a binder; then mix quartz sand and binder at a weight ratio of 1:2 and stir evenly to obtain high-purity quartz Mortar material;

[0035] 2) To prepare high-purity fine sand slurry, use a polycrystalline crucible with a particle size of 600 mesh and a purity of 99.99%, mix high-purity quartz sand and binder water at a weight ratio of 1:2, and stir evenly to obtain a high-purity fine mortar material;

[0036] 3) Prepare a silicon nitride slurry by mixing water and...

Embodiment 2

[0045] A method for preparing a high-efficiency polycrystalline silicon ingot without black edges, the method steps are as follows:

[0046] 1) Prepare high-purity quartz sand slurry, using high-purity quartz sand for a single crystal crucible with a particle size of 150 mesh and a purity of 99.995% and high-purity quartz sand for a polycrystalline crucible with a particle size of 400 mesh and a purity of 99.99% in 1 : 5 weight ratio to mix evenly to obtain quartz sand; the content of Fe element is 4.5ppm deionized water as a binder; then mix the quartz sand and binder in a weight ratio of 1:4, and stir evenly to obtain high-purity Quartz mortar;

[0047] 2) To prepare high-purity fine sand slurry, use a polycrystalline crucible with a particle size of 600 mesh and a purity of 99.99%, mix high-purity quartz sand and binder water at a weight ratio of 1:4, and stir evenly to obtain a high-purity fine mortar material;

[0048] 3) Prepare a silicon nitride slurry by mixing water...

Embodiment 3

[0057] A method for preparing a high-efficiency polycrystalline silicon ingot without black edges, the method steps are as follows:

[0058] 1) Prepare the high-purity quartz sand slurry, using high-purity quartz sand for single crystal crucibles with a particle size of 130 mesh and a purity of 99.995% and high-purity quartz sand for polycrystalline crucibles with a particle size of 330 mesh and a purity of 99.999% with 1 : The weight ratio of 4.5 is mixed evenly to obtain quartz sand; the content of Fe element is 4.5ppm deionized water is used as the binder; then the quartz sand and the binder are mixed according to the weight ratio of 1:3.5 and stirred evenly to obtain high-purity Quartz mortar;

[0059] 2) To prepare high-purity fine sand slurry, use a polycrystalline crucible with a particle size of 660 mesh and a purity of 99.99%, mix high-purity quartz sand and binder water at a weight ratio of 1:3, and stir evenly to obtain a high-purity fine mortar material;

[0060]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameter sizeaaaaaaaaaa
Inner diameter sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a black-edge-free high-efficiency polycrystalline silicon ingot, which comprises the following steps: applying a high-purity quartz sand slurry on the inner side surface of an increased quartz crucible for polycrystalline cast ingots to form a high-purity coating; applying a high-purity fine sand slurry to form a fine sand coating, and carrying out high-temperature quick sintering for 1 hour; spraying a silicon nitride slurry on four walls in the crucible with the two high-purity coatings to form a high-purity silicon nitride coating as a mold release agent; laying a fine silicon material layer on the bottom of the crucible with the silicon nitride coating as a seed crystal layer, and putting a primary silicon material on the seed crystal layer; and opening the heat insulation cage to the height of 5-6cm in the melting stage, testing the residual height of the silicon material with a quartz rod, quickly cooling when the residual height is 5-6mm, entering the crystal growth stage, and controlling the temperature gradient in the crucible to form vertical temperature gradient in the crucible from bottom to top so as to induce the growth of the molten silicon material by utilizing the seed crystal layer laid on the bottom, thereby obtaining the black-edge-free high-efficiency polycrystalline silicon ingot.

Description

technical field [0001] The invention relates to a method for preparing a high-efficiency polycrystalline silicon ingot without black edges, and belongs to the field of polycrystalline silicon ingot casting. Background technique [0002] At present, the preparation method of polycrystalline silicon ingots is mainly carried out by using the directional solidification system provided by GT Solar, which usually includes steps such as heating, melting, crystal growth, annealing and cooling. During the solidification and crystal growth process, the temperature of the top and the opening of the side insulation cover are controlled so that the molten silicon liquid can obtain sufficient supercooling at the bottom of the crucible to solidify and crystallize. However, due to the isotropic structure at the bottom of the crucible in the initial stage of crystal growth, the initial nucleation cannot be effectively controlled during the crystallization of silicon liquid, and there are une...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B28/06C30B29/06
Inventor 刘明权王禄宝
Owner 江苏美科太阳能科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com