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Nanostructured solar cell and manufacturing method thereof

A technology of solar cells and nanostructures, applied in the field of solar cells, can solve the problems of complex production process, low photoelectric conversion efficiency of solar cells, and high production costs, and achieve the effects of low defect density, good industrialization prospects, and increased production capacity.

Inactive Publication Date: 2015-03-04
TIANWEI NEW ENERGY HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to provide a nanostructured solar cell and its preparation method to solve the problems of low photoelectric conversion efficiency, relatively complicated production process and high production cost of current solar cells

Method used

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  • Nanostructured solar cell and manufacturing method thereof

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Embodiment 1

[0047] like figure 1 As shown, a kind of nanostructure solar cell described in this embodiment includes a silicon wafer 1, the front longitudinal section of the silicon wafer 1 has a triangular wave shape, the period of the triangular wave is 100nm, and the fronts of the silicon wafer 1 are stacked sequentially from bottom to top. An inversion layer 2 with a thickness of 30nm and a front passivation layer 3 with a thickness of 80nm, the longitudinal cross-sectional shape of the inversion layer 2 and the front passivation layer 3 is also a triangular wave, the front passivation layer 3 is provided with a front electrode 4, and the silicon wafer 1 is provided with a rear passivation layer 5 , and a rear electrode 6 is provided below the rear passivation layer 5 .

[0048] A method for preparing the above-mentioned nanostructured solar cell, comprising the following steps:

[0049] (a) Remove the mechanically damaged layer on the surface of the silicon wafer with 80°C, 5% NaOH s...

Embodiment 2

[0061] A kind of nanostructure solar cell described in this embodiment comprises a silicon chip 1, the longitudinal section shape of the front of the silicon chip 1 is a triangular wave, the period of the triangular wave is 200nm, and the front of the silicon chip 1 is sequentially stacked with a thickness of 40nm from bottom to top The inversion layer 2 and the thickness of the front passivation layer 3 are 80nm. The longitudinal cross-sectional shape of the inversion layer 2 and the front passivation layer 3 is also a triangular wave. The front passivation layer 3 is provided with a front electrode 4. A rear passivation layer 5 is provided, and a rear electrode 6 is provided below the rear passivation layer 5 .

[0062] A method for preparing the above-mentioned nanostructured solar cell, comprising the following steps:

[0063] (a) Remove the mechanically damaged layer on the surface of the silicon wafer with 80°C, 5% NaOH solution, and the reaction time is 30 seconds;

[...

Embodiment 3

[0075] A kind of nanostructure solar cell described in this embodiment comprises a silicon wafer 1, the longitudinal section shape of the front of the silicon wafer 1 is a triangular wave, the period of the triangular wave is 300nm, and the front of the silicon wafer 1 is sequentially stacked with a thickness of 50nm from bottom to top The inversion layer 2 and the thickness of the front passivation layer 3 are 80nm. The longitudinal cross-sectional shape of the inversion layer 2 and the front passivation layer 3 is also a triangular wave. The front passivation layer 3 is provided with a front electrode 4. A rear passivation layer 5 is provided, and a rear electrode 6 is provided below the rear passivation layer 5 .

[0076] A method for preparing the above-mentioned nanostructured solar cell, comprising the following steps:

[0077] (a) Remove the mechanically damaged layer on the surface of the silicon wafer with 80°C, 5% NaOH solution, and the reaction time is 30 seconds; ...

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Abstract

The invention discloses a nanostructured solar cell and a manufacturing method thereof. The nanostructured solar cell comprises a silicon wafer; the front face of the silicon wafer has a triangular wave-shaped longitudinal section; the triangular wave has a cycle of 100nm to 300nm; the front face of the silicon wafer is sequentially stacked with an inversion layer and a front-faced passivation layer from bottom to top; the inversion layer and the front-faced passivation layer also have a triangular wave-shaped longitudinal section; the front-faced passivation layer is provided with a front-faced electrode; the back face of the silicon wafer is provided with a back-faced passivation layer; and a back-faced electrode is arranged below the back-faced passivation layer. By adopting the above structure, reflection loss of incident light can be reduced, the concentration and the collection rate of photon-generated carriers are increased, and the cell conversion efficiency is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a nanostructured solar cell and a preparation method thereof. Background technique [0002] With the depletion of traditional resources, my country's photovoltaic industry is showing a trend of accelerated development, and the main way to make full use of solar energy is to make solar cells with high conversion efficiency. At the present stage, the crystalline silicon photovoltaic industry uses new structures such as PERL, SE, EWT, MWT, IBC, and HIT on the basis of the original p-type polysilicon, and new materials such as n-type monocrystalline silicon, microcrystalline silicon, and amorphous silicon. The conversion efficiency can reach more than 24%. In recent years, due to the many excellent optoelectronic properties of various nanostructured materials, they have potential applications in future high-energy conversion photovoltaic devices. However, due to the introduction of new r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/0216H01L31/18
CPCH01L31/02168H01L31/02363H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 林洪峰谭筝郜菁王茜龙巍王明聪
Owner TIANWEI NEW ENERGY HLDG