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Preparation method of sub-wavelength silicon nanowire array

A silicon nanowire array and sub-wavelength technology, which is applied in the field of nanomaterials, achieves the effects of reducing production costs, great application prospects, and good anti-reflection characteristics

Active Publication Date: 2015-03-11
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, although there have been reports on the preparation of silicon nanowire arrays by metal nano-assisted etching, the raw materials for the preparation are still mainly single crystal silicon wafers.

Method used

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  • Preparation method of sub-wavelength silicon nanowire array
  • Preparation method of sub-wavelength silicon nanowire array
  • Preparation method of sub-wavelength silicon nanowire array

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Experimental program
Comparison scheme
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Embodiment 1

[0027] The preparation method of the sub-wavelength silicon nanowire array described in this embodiment specifically comprises the following steps:

[0028] (1) Set the size to 156×156mm 2 1. A commercial solar-grade polysilicon wafer with a doping type of p-type, a resistance of 1Ω, and a thickness of 220 μm was ultrasonically cleaned with acetone, toluene, ethanol, and deionized water for 10 minutes;

[0029] (2) put in H 2 SO 4 and H 2 o 2Soak for 1 minute in a solution with a volume ratio of 3:1, then soak for 10 minutes in a hydrofluoric acid solution with a concentration of 10 wt%, take it out and rinse it with a large amount of deionized water for later use;

[0030] (3) Prepare 500ml HF / AgNO 3 Etching solution, HF and AgNO 3 The concentrations are 2.3mol / L and 5mol / L respectively; put the cleaned polysilicon wafer into the etching solution, move it to a dark room and let it stand for 50 minutes to obtain a silicon nanowire array with metal ions;

[0031] (4) Tak...

Embodiment 2

[0034] The preparation method of the sub-wavelength silicon nanowire array described in this embodiment specifically comprises the following steps:

[0035] (1) Set the size to 156×156mm 2 1. A commercial solar-grade polysilicon wafer with a doping type of p-type, a resistance of 2Ω, and a thickness of 210 μm was ultrasonically cleaned with acetone, toluene, ethanol, and deionized water for 10 minutes;

[0036] (2) put in H 2 SO 4 and H 2 o 2 Soak it in a solution with a volume ratio of 3:1 for 10 minutes, then soak it in a hydrofluoric acid solution with a concentration of 0.1wt% for 120 minutes, take it out and wash it with a large amount of deionized water for later use;

[0037] (3) Prepare 500ml HF / H 2 PtCl 6 Etching solution, HF and H 2 PtCl 6 The concentrations are 15mol / L and 5mol / L respectively; put the cleaned polysilicon wafer into the etching solution and let it stand for 5min to obtain a silicon nanowire array with metal ions;

[0038] (4) Take out the si...

Embodiment 3

[0041] The preparation method of the sub-wavelength silicon nanowire array described in this embodiment specifically comprises the following steps:

[0042] (1) Set the size to 156×156mm 2 1. A commercial solar-grade polysilicon wafer with a doping type of p-type, a resistance of 3Ω, and a thickness of 180 μm was ultrasonically cleaned with acetone, toluene, ethanol, and deionized water for 10 minutes;

[0043] (2) put in H 2 SO 4 and H 2 o 2 Soak in a solution with a volume ratio of 3:1 for 2 minutes, then soak in a hydrofluoric acid solution with a concentration of 5wt% for 20 minutes, take it out and wash it with a large amount of deionized water for subsequent use;

[0044] (3) Prepare 500ml HF / KAuCl 4 Etching solution, HF and KAuCl 4 The concentrations are 0.1mol / L and 10mol / L respectively; put the cleaned polysilicon wafer into the etching solution, then move it to the dark room and let it stand for 600min;

[0045] (4) After that, take out the silicon nanowire ar...

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Abstract

The invention discloses a preparation method of a sub-wavelength silicon nanowire array and belongs to the nano material technical field. According to the preparation method of the invention, a cheap commercial polycrystalline silicon sheet is adopted as a raw material; a catalytic effect of nano metal particles including Ag, Pd, Au, Pt and Cu is utilized; one or two steps of a metal nanoparticle assisted etching method is utilized to perform etching, so that a large-scale (156*156mm<2>) silicon nanowire array of a single crystal structure can be prepared; the silicon nanowire array is subjected to secondary corrosion, so that a large-scale thin-tipped nanowire array of a sub-wavelength structure can be effectively obtained; and silicon nanowire arrays of different structures can be prepared through adjusting and controlling parameters such as the size of metal nanoparticles, the concentration of hydrofluoric acid, corrosion time and the concentration of lye. The large-scale nanowire array of the sub-wavelength structure obtained through adopting the method has excellent anti-reflection properties for light, so that silicon nanowires have a bright application prospect in the solar photovoltaic field.

Description

technical field [0001] The invention relates to a preparation method of a subwavelength silicon nanowire array, belonging to the technical field of nanometer materials. Background technique [0002] In recent years, as a new type of semiconductor material, silicon nanowires have unique properties in light, electricity, heat, magnetism and catalytic reactions due to their large specific surface area, quantum confinement effect, and surface effect. Due to their physical and chemical properties, they have shown very important application potential in the fields of photoluminescence, large-scale integrated circuits, single electronic devices, and nanosensors. [0003] According to the growth direction of silicon nanowires, the preparation methods are generally divided into two types: "bottom-up" and "top-down". "Bottom-up" refers to starting from the atomic and molecular level, using catalysts to catalyze the growth, and controlling the structure, composition and size of the ma...

Claims

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Application Information

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IPC IPC(8): H01L21/02B81C1/00H01L31/0236
CPCB81C1/00214Y02E10/50
Inventor 马文会李绍元周阳魏奎先于洁杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH
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