A pyroelectric infrared detector sensitive unit and its manufacturing method

A pyroelectric infrared and sensitive unit technology, which is applied in the direction of electrical components, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of difficult to prepare high-performance pyroelectric infrared detectors, weak absorption layer adhesion, Narrow absorption band and other problems, to achieve the effect of excellent heat transfer performance, small specific heat capacity and wide absorption band

Active Publication Date: 2017-01-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the absorption layer of pyroelectric infrared detectors has disadvantages such as weak adhesion or narrow absorption band, incompatibility with standard semiconductor processes, and difficulty in preparing high-performance pyroelectric infrared detectors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A pyroelectric infrared detector sensitive unit and its manufacturing method
  • A pyroelectric infrared detector sensitive unit and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0044] (1) Lithium tantalate (LiTaO 3 ) crystal surface treatment

[0045] 1) Cleaning LiTaO 3 wafer. to LiTaO 3 Surface A (first surface) and surface B (second surface) of the wafer are mechanically thinned and polished and chemically etched. Wet etching LiTaO 3 Wafer to remove defects and damage caused by thinning polishing.

[0046] (2) Depositing an infrared absorbing layer and etching to form an electrode structure

[0047] 2) Clean LiTaO 3 The wafer is photolithographically patterned on the A side (that is, the pattern described above is formed).

[0048] 3) In LiTaO 3 Chromium metal film and nickel metal film are deposited on the A side of the wafer by magnetron sputtering process. Float cleaning. Among them, the thickness of the chromium metal film is 15nm, and the thickness of the nickel metal film is 60nm.

[0049] 4) In LiTaO 3 Photolithographic patterning of the A side of the wafer.

[0050] 5) In LiTaO 3 The magnetron sputtering process was used to d...

example 2

[0057] (1) LiTaO 3 surface treatment

[0058] 1) Cleaning LiTaO 3 wafer. to LiTaO 3 Surface A (first surface) and surface B (second surface) of the wafer are mechanically thinned and polished and chemically etched. Wet etching LiTaO 3 Wafer to remove defects and damage caused by thinning polishing.

[0059] (2) Deposit the infrared absorbing layer and etch to form the electrode structure

[0060] 2) Clean LiTaO 3 The wafer is photolithographically patterned on the A side.

[0061] 3) In LiTaO 3 Chromium metal film and nickel metal film are deposited on the A side of the wafer by magnetron sputtering process, and the float cleaning is carried out. Among them, the thickness of the chromium metal film is 20nm, and the thickness of the nickel metal film is 65nm.

[0062] 4) In LiTaO 3 Photolithographic patterning of the A side of the wafer.

[0063] 5) In LiTaO 3 The chromium-nickel alloy absorption layer was deposited on the A side of the wafer by thermal evaporation...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The embodiment of the present invention discloses a method for manufacturing a sensitive unit of a pyroelectric infrared detector, comprising: preparing a lithium tantalate wafer substrate; forming a chromium metal film on the first surface of the lithium tantalate wafer substrate; Forming a nickel metal film on the chromium metal film; forming a first chromium-nickel alloy layer on the nickel metal film and etching to form an upper electrode; forming a second chromium-nickel alloy layer on the second surface of the lithium tantalate wafer substrate and etching A lower electrode is formed. The absorption layer of the sensitive unit of the pyroelectric infrared detector manufactured according to the method of the embodiment of the present invention has the advantages of firm adhesion, good repeatability, wide absorption band, flat spectrum, high absorption rate, small specific heat capacity, and excellent heat transfer performance. At the same time, the absorbing layer can also serve as an electrode, and is suitable as the absorbing layer of the pyroelectric infrared detector.

Description

technical field [0001] The invention relates to the technical field of pyroelectric infrared detectors, in particular to a pyroelectric infrared detector sensitive unit and a manufacturing method thereof. Background technique [0002] Pyroelectric infrared detectors have many advantages such as room temperature operation, low power consumption, compact structure, high reliability, wide and flat spectral response, simple process, low price, and strong anti-interference, and can be widely used in military defense, industrial , medicine and health, environmental monitoring and scientific research and other fields, such as infrared guidance and intrusion alarm, safety monitoring, fire alarm, industrial production monitoring, aircraft volume assisted driving, medical diagnosis, spectral analysis, earth atmosphere monitoring and many other aspects. [0003] When the infrared radiation is incident on the pyroelectric infrared detector, the infrared radiation is absorbed by the dete...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/18
CPCH01L31/101H01L31/109H01L31/18Y02P70/50
Inventor 刘子骥梁志清王涛黎威志于贺王军
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap