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Preparation method for high-quality silicon wafer cutting fluid

A cutting fluid and silicon wafer technology, applied in the petroleum industry, lubricating compositions, etc., can solve the problems of poor redispersion ability, agglomeration, and inability to re-disperse silicon carbide, etc., to reduce surface damage, improve thickness error, and improve cutting quality. rate effect

Inactive Publication Date: 2015-04-08
ZHENJIANG GANGNAN ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For the existing cutting fluids at home and abroad, they all have the weakness of poor redispersion ability. After a long time of storage, silicon carbide will be deposited and agglomerated. If you stir again, the silicon carbide cannot be dispersed in the cutting fluid again.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0037] A kind of preparation method of high-quality silicon wafer cutting fluid, its preparation method is as follows:

[0038] (1) Add 50 parts of polyethylene glycol, 25 parts of triethanolamine, 15 parts of water, and 13 parts of carboxymethyl cellulose into the reaction kettle for stirring. The initial temperature of stirring is 50°C, and it increases by 8°C every 5 minutes until the temperature Raise to 120°C, continue to stir for 10 minutes, then take out component A;

[0039] (2) Add 6 parts of salicylic acid, 12 parts of sodium thiosulfate, 5 parts of triethylene glycol, 1.2 parts of sodium alkyl succinate sulfonate, 6 parts of surfactant, 6 parts of dispersant and 17 parts of water Stir in the reaction kettle, the stirring temperature is 110°C, and the component B is obtained after continuous stirring for 30 minutes;

[0040] (3) Add component A to component B at a weight ratio of 10:9 for further stirring, the stirring temperature is 110°C, and stirring for 15 minut...

example 2

[0043] A kind of preparation method of high-quality silicon wafer cutting fluid, its preparation method is as follows:

[0044] (1) Add 60 parts of polyethylene glycol, 35 parts of triethanolamine, 15 parts of water, and 14 parts of carboxymethyl cellulose into the reaction kettle for stirring. The initial temperature of stirring is 50 °C, and it will increase by 8 °C every 5 minutes until the temperature Raise to 120°C, continue to stir for 10 minutes, then take out component A;

[0045] (2) Add 7 parts of salicylic acid, 10 parts of sodium thiosulfate, 3 parts of triethylene glycol, 3 parts of sodium alkyl succinate sulfonate, 5 parts of surfactant, 5 parts of dispersant and 15 parts of water Stir in the reaction kettle, the stirring temperature is 110°C, and the component B is obtained after continuous stirring for 30 minutes;

[0046] (3) Add component A to component B at a weight ratio of 13:9 for further stirring, the stirring temperature is 110°C, and stirring is enoug...

example 3

[0049] A kind of preparation method of high-quality silicon wafer cutting fluid, its preparation method is as follows:

[0050] (1) Add 56 parts of polyethylene glycol, 28 parts of triethanolamine, 18 parts of water, and 12 parts of carboxymethyl cellulose into the reaction kettle for stirring. The initial temperature of stirring is 50 ° C, and it will increase by 8 ° C every 5 minutes until the temperature Raise to 120°C, continue to stir for 10 minutes, then take out component A;

[0051] (2) Add 5 parts of salicylic acid, 8 parts of sodium thiosulfate, 5.5 parts of triethylene glycol, 2.2 parts of sodium alkyl succinate sulfonate, 10 parts of surfactant, 10 parts of dispersant, and 17 parts of water Stir in the reaction kettle, the stirring temperature is 110°C, and the component B is obtained after continuous stirring for 30 minutes;

[0052] (3) Add component A to component B at a weight ratio of 13:8 for further stirring, the stirring temperature is 110°C, and stirring ...

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PUM

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Abstract

The invention relates to a preparation method for a high-quality silicon wafer cutting fluid. The preparation method comprises the following steps: adding a component A into a reaction kettle to stir at an initial stirring temperature of 50 DEG C, raising the temperature by 8 DEG C every 5 minutes until the temperature is raised to 120-150 DEG C, then, continuously stirring for 10-15 minutes and then getting out the component A; adding a component B into the reaction kettle to stir at a stirring temperature of 110-160 DEG C, and continuously stirring for 30-45 minutes; adding the component A (in parts by weight) into the component B to further stir for 10-20 minutes at a stirring temperature of 100-110 DEG C. The preparation method can be used for improving the stability of silicon carbide, increasing the cutting yield and greatly lowering the cutting cost, and has very strong re-dispersion ability.

Description

technical field [0001] The invention relates to a preparation method of high-quality silicon chip cutting fluid. Background technique [0002] Solar silicon wafer cutting generally uses silicon carbide micropowder with high hardness, small particle size and concentrated particle size distribution as the main cutting medium. Usually, carbonized micropowder should be added to the cutting fluid in a certain proportion, and fully dispersed, and then configured into a uniform and stable cutting mortar, which can then be used for silicon wafer cutting. Using silicon carbide micropowder as the medium in the wire cutting process of solar silicon wafers, the whole mechanism is to make the silicon carbide micropowder particles continuously and rapidly impact the surface of the silicon rod, and use the hard characteristics and sharp corners of the silicon carbide particles to gradually cut off the silicon rod. This process will Accompanied by the large frictional heat release, at the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C10M173/02C10N30/06C10N40/22
Inventor 聂金根
Owner ZHENJIANG GANGNAN ELECTRIC
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