Bismuth layer-structured piezoelectric ceramic material and preparation method thereof

A piezoelectric ceramic and bismuth layered technology, which is applied in the field of materials, can solve problems such as high sintering temperature and lower Curie temperature, and achieve the effect of lowering sintering temperature and reducing manufacturing costs
CN104529435AInactive Publication Date: 2015-04-22INST OF ACOUSTICS CHINESE ACAD OF SCI
4 Cites 10 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF ACOUSTICS CHINESE ACAD OF SCI
Publication Date
2015-04-22
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a low-temperature sintered bismuth layer-structured piezoelectric ceramic material and a preparation method thereof. A chemical general formula of the piezoelectric ceramic material is Ca1-x-yLixAyBzBi4Ti4-zO15, wherein A is one or more of valence-variable doping elements Ce, Mn and Sr; B is one or more of valence-variable doping elements Cr, Nb and W; x, y and z are respectively mole fractions of a Li element, an A-position element and a B-position element; x is smaller than or equal to 0.1 and greater than 0; y is smaller than or equal to 0.1 and greater than or equal to 0; z is smaller than or equal to 0.1 and greater than or equal to 0; and y and z are not simultaneously zero. The piezoelectric ceramic material disclosed by the invention has the advantages of relatively low sintering preparation temperature, relatively high curie temperature, and excellent piezoelectric property and overall dielectric properties, and can be applied to various high-temperature piezoelectric devices.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of material technology, in particular to a low-temperature sintered bismuth layered structure piezoelectric ceramic material and a preparation method thereof. Background technique

[0002] In recent years, with the development of aerospace, automobile industry and geological exploration and other fields, the requirements for the performance of various piezoelectric devices used in high temperature environments have been continuously improved, with high T c The demand for piezoelectric ceramics is becoming increasingly urgent. However, the Curie temperature of conventional lead zirconate titanate (PZT) piezoelectric ceramics is about 300-370°C. Because of the piezoelectric instability caused by depolarization caused by temperature rise, the upper limit of its operating temperature is generally at T c 1 / 2 of the place, so the service temperature of PZT piezoelectric ceramics is generally much lower than 180°C. [000...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More