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Bismuth layer-structured piezoelectric ceramic material and preparation method thereof

A piezoelectric ceramic and bismuth layered technology, which is applied in the field of materials, can solve problems such as high sintering temperature and lower Curie temperature, and achieve the effect of lowering sintering temperature and reducing manufacturing costs

Inactive Publication Date: 2015-04-22
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its sintering temperature has always been high, ranging from 1000 to 1180°C (Materials Science and Engineering B, 2005, Vol 117, pp 241–245, Journal of Electroceramics, 2008, Vol 21, pp 305-308), and it may cause a decrease in the Curie temperature
At present, there is no report on the preparation of bismuth layered ceramics with reliable piezoelectricity by sintering at lower temperatures.

Method used

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  • Bismuth layer-structured piezoelectric ceramic material and preparation method thereof
  • Bismuth layer-structured piezoelectric ceramic material and preparation method thereof
  • Bismuth layer-structured piezoelectric ceramic material and preparation method thereof

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Embodiment 1

[0028] Embodiment 1 of the present invention provides a piezoelectric ceramic material with bismuth layered structure, whose general chemical formula is: Ca 1-x-y Li x A y B z Bi 4 Ti 4-z o 15 ;

[0029] Among them, A is one or more of the variable-valence doping elements Ce, Mn, and Sr, and B is one or more of the variable-valence doping elements Cr, Nb, and W; x, y, and z are Li, A, respectively. Mole fraction of bit element and B bit element, 0<x≤0.1, 0≤y≤0.1, 0≤z≤0.1, and the values ​​of y and z are not zero at the same time.

[0030] The bismuth layered piezoelectric ceramic material provided by the embodiments of the present invention has an ultra-high Curie temperature (750°C-800°C), a relatively high piezoelectric constant (15pC / N-30pC / N), and a wide range of Mechanical quality factor (100-6000) and lower dielectric loss (0.001-0.05). Compared with the preparation of existing bismuth layer structure piezoelectric ceramic materials, the sintering temperature in ...

Embodiment 2

[0032] This embodiment provides the preparation method of the bismuth layered structure piezoelectric ceramic material in the above-mentioned embodiment 1, such as figure 1 shown, including:

[0033] Step 201, the Li 2 CO 3 Dry at 100°C-200°C for 0.5-3 hours;

[0034] Step 202, according to the molar ratio, the dried Li 2 CO 3 and CaCO 3 、TiO 2 , oxides or salts of elements at the A and / or B positions in the general formula, and an excess of 0-1% Bi 2 o 3 Mixing and ball milling with water or ethanol as a medium to obtain raw material slurry;

[0035] Wherein, A is one or more of the variable-valence doping elements Ce, Mn, and Sr, and B is one or more of the variable-valence doping elements Cr, Nb, and W.

[0036] Step 203, after drying and sieving the raw material slurry, pre-calcine to obtain a bismuth layered block;

[0037] Step 204, ball milling the block again, drying the slurry obtained by ball milling to obtain a powder;

[0038]Step 205, drying the powder ...

Embodiment 3

[0051] Will Li 2 CO 3 After baking at 120°C for 1 hour, with Bi 2 o 3 , CaCO 3 、TiO 2 , CeO 2 and Li 2 CO 3 Press Ca 0.997 Li 0.002 Ce 0.001 Bi 4 Ti 4 o 15 Weigh the molar ratio, add an appropriate amount of ethanol to mix and ball mill, dry and sieve, pre-fire at 750°C for 2 hours, then ball mill and dry, add 5% PVA to grind and granulate, and age for 6 hours , After sieving, put it into a mold and press it into a ceramic green body with a diameter of 12mm and a thickness of about 1.2mm.

[0052] The ceramic body was placed in a closed crucible and sintered at 950°C for 1 hour. After grinding, polishing, and silver coating, the piezoelectric ceramic body was polarized in 150°C silicone oil at 5kV / mm for 30 minutes. After cooling down, the desired piezoelectric ceramic material is obtained.

[0053] The piezoelectric ceramic material is made into a ceramic disc with a diameter of about 10mm and a thickness of about 1mm for testing. The comprehensive electrical p...

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Abstract

The invention discloses a low-temperature sintered bismuth layer-structured piezoelectric ceramic material and a preparation method thereof. A chemical general formula of the piezoelectric ceramic material is Ca1-x-yLixAyBzBi4Ti4-zO15, wherein A is one or more of valence-variable doping elements Ce, Mn and Sr; B is one or more of valence-variable doping elements Cr, Nb and W; x, y and z are respectively mole fractions of a Li element, an A-position element and a B-position element; x is smaller than or equal to 0.1 and greater than 0; y is smaller than or equal to 0.1 and greater than or equal to 0; z is smaller than or equal to 0.1 and greater than or equal to 0; and y and z are not simultaneously zero. The piezoelectric ceramic material disclosed by the invention has the advantages of relatively low sintering preparation temperature, relatively high curie temperature, and excellent piezoelectric property and overall dielectric properties, and can be applied to various high-temperature piezoelectric devices.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a low-temperature sintered bismuth layered structure piezoelectric ceramic material and a preparation method thereof. Background technique [0002] In recent years, with the development of aerospace, automobile industry and geological exploration and other fields, the requirements for the performance of various piezoelectric devices used in high temperature environments have been continuously improved, with high T c The demand for piezoelectric ceramics is becoming increasingly urgent. However, the Curie temperature of conventional lead zirconate titanate (PZT) piezoelectric ceramics is about 300-370°C. Because of the piezoelectric instability caused by depolarization caused by temperature rise, the upper limit of its operating temperature is generally at T c 1 / 2 of the place, so the service temperature of PZT piezoelectric ceramics is generally much lower than 180°C. [000...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/622
Inventor 郭栋邓平晔蔡锴江凤李浩然
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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