Ground-state Hydrogen Radical Sources for Chemical Vapor Deposition of Silicon-Containing Carbon Films
A free-radical, silicon-carbon technology, used in gaseous chemical plating, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as low film deposition rate, reduced active material yield, and reduced film density due to processing pressure.
Active Publication Date: 2017-06-06
LAM RES CORP
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Problems solved by technology
However, wall collisions and other quenching events are expected to reduce the yield of active species produced by remote plasmas
Furthermore, film deposition rates for remote hydrogen plasma processing are expected to be unacceptably low
Since silicon carbide film density is believed to vary inversely with process pressure, an increase in process pressure intended to increase deposition rate may detrimentally reduce film density, thereby resulting in unacceptable barrier layer performance properties
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[0014] Thin films containing silicon and carbon (such as silicon carbide (SiC x ), Silicon Carbon Nitride (SiN x C y ), silicon carbide (SiC x o y ) and silicon carbon oxynitride (SiC x o y N z )) are frequently used as barrier materials in integrated semiconductor manufacturing processes. For example, silicon-carbon containing films can be used as metal diffusion barriers, etch stop layers, hard mask layers, or gate spacers for source and drain implants, used as magnetoresistive random access memory (MRAM ) or resistive random access memory (RRAM) encapsulation barrier structure, or used as a hermetic diffusion barrier structure under multiple air gaps. These films are formed by plasma enhanced chemical vapor deposition (PECVD) from the reaction between organosilicon reactants or precursors and co-reactants. Plasma activation of the reactive species can lower the activation temperature of the deposition reaction and make other unstable reaction pathways available. Ho...
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The present invention relates to a source of ground state hydrogen radicals for chemical vapor deposition of silicon-containing carbon films, specifically, a thin layer of silicon-containing carbon films is deposited on a substrate by hydrogen radicals; providing hydrogen radicals to a substrate processing chamber separate from the substrate processing chamber via a multi-port gas distributor; and combining hydrogen radicals therein with organosilicon reactants simultaneously introduced into the substrate processing chamber react. The hydrogen radicals are allowed to relax to a ground state within a radical relaxation region within the substrate processing chamber before reacting with the organosilicon reactant.
Description
technical field [0001] The present invention relates generally to the field of semiconductor processing, and more particularly to a source of ground state hydrogen radicals for chemical vapor deposition of silicon-containing carbon films. Background technique [0002] Silicon carbide films are often used as barrier layers in semiconductor substrate processing operations. As such, silicon carbide films often must have a high density (e.g., greater than about 2 g / cc), must be hermetic, and must have low porosity to prevent unwanted material (e.g., metal atoms or air) from diffusing or Undesirable etching of the barrier layer is prevented. [0003] Some have suggested that generating remote hydrogen plasmas can improve silicon carbide thin film properties. However, wall collisions and other quenching events are expected to reduce the yield of active species produced by remote plasmas. Furthermore, film deposition rates for remote hydrogen plasma processing are expected to be...
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IPC IPC(8): C23C16/452
CPCC23C16/452C23C16/30C23C16/325C23C16/36C23C16/45502C23C16/505H01L21/02274H01L21/02167H01L21/02126H01J37/32357H01J37/32449H01J2237/327H01J2237/3321H01J2237/3326H01L21/3003
Inventor 巴德里·N·瓦拉达拉简龚波
Owner LAM RES CORP