Copper etching solution and method for manufacturing printed circuit board
A printed circuit board, copper etching technology, applied in the field of copper etching solution for preparing fine circuit patterns, can solve the problems of affecting appearance, hindering etching, high ammonia consumption, etc., and achieving the effect of reducing side etching phenomenon
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Embodiment 1
[0025] This embodiment adopts
[0026] Chloride ion: 3.7mol / L
[0027] Ethanolamine: 4.7mol / L
[0028] N-methyl-2-mercaptoimidazole: 0.10g / L
[0029] The concentration of copper ions is 70g / L, 80g / L, 90g / L, 100g / L, 110g / L to prepare five groups of copper etching solutions, and the use temperature of each group of copper etching solutions is 60°C, all adjusted by sodium hydroxide The pH is 9.0.
[0030] Adopt above-mentioned five groups of copper etching solutions to carry out copper etching, and measure the etching rate and the side erosion factor of aforementioned copper etching solutions by static hanging piece and dynamic spray etching method respectively, obtain: Static and dynamic etching rate are respectively 6 μ m / min and 21.2μm / min, and the side etching phenomenon is effectively reduced while etching, and a relatively regular rectangular line is obtained.
Embodiment 2
[0032] This embodiment adopts
[0034] Ethanolamine: 4.7mol / L
[0035] N-methyl-2-mercaptoimidazole: 2.0g / L
[0036] Chloride ion concentrations were 2.0mol / L, 2.5mol / L, 3.0mol / L, 3.5mol / L, 4.0mol / L, 4.5mol / L, and 5.0mol / L to prepare seven groups of copper etching solutions, and each group of copper The use temperature of the etching solution is 60° C., and the pH is adjusted to 9.0 with sodium hydroxide.
[0037] The copper etching solution of this embodiment was used to etch the copper on the circuit board, and the etching rate and side erosion factor of the aforementioned copper etching solution were measured by the static hanging piece and the dynamic spray etching method respectively.
Embodiment 3
[0039] The copper etching solution that present embodiment provides is as follows:
[0040] Copper ion: 85g / L
[0041] Chloride ion: 3.7mol / L
[0042] N-methyl-2-mercaptoimidazole: 2.0g / L
[0043] The concentrations of ethanolamine are 2.5mol / L, 3.0mol / L, 3.5mol / L, 4.0mol / L, 4.5mol / L, 5.0mol / L, and 5.5mol / L to prepare seven groups of copper etching solutions, and each group of copper etching The use temperature of the solution is 60°C, and the pH is adjusted to 9.0 with sodium hydroxide. The copper etching solution of this embodiment was used to etch the copper on the circuit board, and the etching rate and side erosion factor of the aforementioned copper etching solution were measured by the static hanging piece and the dynamic spray etching method respectively.
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