Processing method capable of preventing electrochemical corrosion of through-hole metals

A processing method and electrochemical technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of electrochemical corrosion of through-hole metals, etc.

Active Publication Date: 2015-04-29
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a treatment method for avoiding electrochemical corrosion of the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing method capable of preventing electrochemical corrosion of through-hole metals
  • Processing method capable of preventing electrochemical corrosion of through-hole metals
  • Processing method capable of preventing electrochemical corrosion of through-hole metals

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0037] Example one

[0038] The invention provides a treatment method for avoiding electrochemical corrosion of through-hole metal, such as Figure 5 As shown, the treatment method for preventing electrochemical corrosion of through-hole metal at least includes the steps:

[0039] First, step S1 is performed to provide a metal interconnection structure. The metal interconnection structure includes a first metal layer located on the

[0040] First

[0041] An insulating layer provided with a through hole on a metal layer and a second metal layer located on the insulating layer; the through hole is filled with a third metal layer to connect the first metal layer and the second metal layer;

[0042] Then step S2 is executed, the metal interconnection structure is placed in the reaction chamber, and N 2 And H 2 O mixture gas, plasma the N 2 And H 2 O mixed gas makes H 2 O dissociates to form hydrogen atoms, and the hydrogen atoms capture the positive charge in the second metal layer to prev...

Example Embodiment

[0052] Example two

[0053] In this embodiment, the line width of the second metal layer 2 is 0.14 to 0.20 μm.

[0054] The treatment process for avoiding electrochemical corrosion of through-hole metal of the present invention is completed in the reaction chamber of the plasma etching machine, the wafer is placed on the carrier of the reaction chamber, and the internal pressure of the reaction chamber is reduced by the vacuum system, so The pressure is set to 1.1 Torr. After the vacuum is established, the reaction chamber is filled with N 2 And H 2 Mixed gas of O, N 2 And H 2 The mixed gas of O surrounds the metal interconnection structure, and then the power is turned on to create a radio frequency electric field between the parallel plate electrodes in the reaction chamber. The radio frequency power is set to 900 watts, and the mixed gas is excited into a plasma state by the radio frequency electric field.

[0055] In this embodiment, N in the mixed gas introduced 2 The flow of ga...

Example Embodiment

[0057] Example three

[0058] In this embodiment, the line width of the second metal layer 2 is 0.20 to 0.30 μm.

[0059] The treatment process for avoiding electrochemical corrosion of through-hole metal of the present invention is completed in the reaction chamber of the plasma etching machine, the wafer is placed on the carrier of the reaction chamber, and the internal pressure of the reaction chamber is reduced by the vacuum system, so The pressure is set to 1.1 Torr. After the vacuum is established, the reaction chamber is filled with N 2 And H 2 Mixed gas of O, N 2 And H 2 The mixed gas of O surrounds the metal interconnection structure, and then the power is turned on to create a radio frequency electric field between the parallel plate electrodes in the reaction chamber. The radio frequency power is set to 900 watts, and the mixed gas is excited into a plasma state by the radio frequency electric field.

[0060] In this embodiment, N in the mixed gas introduced 2 The flow of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Line widthaaaaaaaaaa
Line widthaaaaaaaaaa
Line widthaaaaaaaaaa
Login to view more

Abstract

The invention provides a processing method capable of preventing electrochemical corrosion of through-hole metals. The processing method at least comprises the following steps: firstly, providing a metal interconnection structure including a first metal layer, an insulating layer which is positioned on the first metal layer and is provided with a through hole and a second metal layer which is positioned on the insulating layer; filling the through hole with a third metal layer communicated with the first metal layer and the second metal layer; then, putting the metal interconnection structure into a reaction cavity, introducing mixed gas of N2 and H2O and performing ionization on the mixed gas of N2 and H2O to dissociate H2O to form hydrogen atoms, wherein the hydrogen atoms capture positive charge in the second metal layer to prevent the third metal layer in the through hole from being corroded by performing electrochemical reaction on the positive charge; the second metal layer is made of aluminum-copper alloy; the third metal layer is made of tungsten.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a treatment method for avoiding electrochemical corrosion of through-hole metal. Background technique [0002] The manufacture of integrated circuits can be divided into two main parts. First, the active and passive devices are fabricated on the surface of the wafer, which is called the front line (FEOL); and then it is necessary to use a metal system on the chip to connect each device and Different layers, this is called Back of Line (BEOL). [0003] Chip metallization in the back-line is the process of depositing a conductive metal film on a chip by chemical or physical treatment. This process is closely related to the deposition of the dielectric. The metal wires transmit signals in the IC circuit, and the dielectric layer ensures that the signals are not affected by adjacent metal wires. A through hole is an opening that passes through various dielectric layers to fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/768
CPCH01L21/76886
Inventor 郭享董彦德杨建国孙磊代大全
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap