A treatment method for avoiding electrochemical corrosion of through-hole metal

A processing method and electrochemical technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of electrochemical corrosion of through-hole metals, etc.

Active Publication Date: 2017-12-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a treatment method for avoiding electrochemical corrosion of the through-hole metal, which is used to solve the problem of the high potential provided by the positively charged metal layer in the prior art. Electrochemical Corrosion of Porous Metals

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  • A treatment method for avoiding electrochemical corrosion of through-hole metal
  • A treatment method for avoiding electrochemical corrosion of through-hole metal
  • A treatment method for avoiding electrochemical corrosion of through-hole metal

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Embodiment 1

[0038] The invention provides a treatment method for avoiding electrochemical corrosion of through-hole metal, such as Figure 5 As shown, the treatment method for avoiding the electrochemical corrosion of the via metal at least includes the steps:

[0039] First, step S1 is performed to provide a metal interconnection structure, the metal interconnection structure includes a first metal layer, located in the

[0040] No.

[0041] An insulating layer with a through hole on a metal layer and a second metal layer on the insulating layer; the through hole is filled with a third metal layer to communicate with the first metal layer and the second metal layer;

[0042] Next, step S2 is performed, placing the metal interconnection structure in the reaction chamber, and injecting N 2 and H 2 O mixed gas, plasma the N 2 and H 2 The mixed gas of O makes H 2 O is dissociated to form hydrogen atoms, and the hydrogen atoms capture the positive charges in the second metal layer to pr...

Embodiment 2

[0053] In this embodiment, the line width of the second metal layer 2 is 0.14-0.20 μm.

[0054] The treatment process of the present invention for avoiding the electrochemical corrosion of through-hole metal is completed in the reaction chamber of the plasma etching machine, the wafer is placed on the carrier of the reaction chamber, and the internal pressure of the reaction chamber is reduced by the vacuum system, so that The above pressure is set to 1.1 torr, after the vacuum is established, the reaction chamber is filled with N 2 and H 2 Mixed gas of O, N 2 and H 2 The mixed gas of O surrounds the metal interconnection structure, and then the power is turned on to create a radio frequency electric field between the parallel plate electrodes in the reaction chamber. The radio frequency power is set to 900 watts, and the mixed gas is excited into a plasma state by the radio frequency electric field.

[0055] In this example, the N in the mixed gas 2 The flow rate of the g...

Embodiment 3

[0058] In this embodiment, the line width of the second metal layer 2 is 0.20-0.30 μm.

[0059] The treatment process of the present invention for avoiding the electrochemical corrosion of through-hole metal is completed in the reaction chamber of the plasma etching machine, the wafer is placed on the carrier of the reaction chamber, and the internal pressure of the reaction chamber is reduced by the vacuum system, so that The above pressure is set to 1.1 torr, after the vacuum is established, the reaction chamber is filled with N 2 and H 2 Mixed gas of O, N 2 and H 2 The mixed gas of O surrounds the metal interconnection structure, and then the power is turned on to create a radio frequency electric field between the parallel plate electrodes in the reaction chamber. The radio frequency power is set to 900 watts, and the mixed gas is excited into a plasma state by the radio frequency electric field.

[0060] In this example, the N in the mixed gas 2 The flow rate of the g...

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Abstract

The invention provides a processing method capable of preventing electrochemical corrosion of through-hole metals. The processing method at least comprises the following steps: firstly, providing a metal interconnection structure including a first metal layer, an insulating layer which is positioned on the first metal layer and is provided with a through hole and a second metal layer which is positioned on the insulating layer; filling the through hole with a third metal layer communicated with the first metal layer and the second metal layer; then, putting the metal interconnection structure into a reaction cavity, introducing mixed gas of N2 and H2O and performing ionization on the mixed gas of N2 and H2O to dissociate H2O to form hydrogen atoms, wherein the hydrogen atoms capture positive charge in the second metal layer to prevent the third metal layer in the through hole from being corroded by performing electrochemical reaction on the positive charge; the second metal layer is made of aluminum-copper alloy; the third metal layer is made of tungsten.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a treatment method for avoiding electrochemical corrosion of through-hole metal. Background technique [0002] The manufacture of integrated circuits can be divided into two main parts. First, the active and passive devices are fabricated on the surface of the wafer, which is called the front line (FEOL); and then it is necessary to use a metal system on the chip to connect each device and Different layers, this is called Back of Line (BEOL). [0003] Chip metallization in the back-line is the process of depositing a conductive metal film on a chip by chemical or physical treatment. This process is closely related to the deposition of the dielectric. The metal wires transmit signals in the IC circuit, and the dielectric layer ensures that the signals are not affected by adjacent metal wires. A through hole is an opening that passes through various dielectric layers to fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76886
Inventor 郭享董彦德杨建国孙磊代大全
Owner SEMICON MFG INT (SHANGHAI) CORP
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