Germanium-silicon heterojunction bipolar transistor and manufacturing method thereof

Abstract

The invention discloses a germanium-silicon heterojunction bipolar transistor. The germanium-silicon heterojunction bipolar transistor is formed on a P-epitaxial layer of a P+silicon substrate, an active region is isolated by field oxide regions, and a collector region is formed in the active region and extends to enter the bottoms of the field oxide regions on the two sides of the active region; burial layers are formed at the bottoms of the field oxide regions on the two sides of the active region and in contact with the collector region, and first deep hole contacts are formed in the field oxide regions at the tops of the burial layers so that collecting electrodes are led out; a base region consisting of a germanium-silicon epitaxial layer, and an emitter region consisting of polysilicon are successively formed at the top of the collector region, and metal contacts are respectively formed at the tops of the base region and the emitter region; a second deep hole contact penetrating through an interlaminar film and the P-epitaxial layer is formed at the exterior zone of a device, and an emitter is connected with the second deep hole contact and connected to the P+ silicon substrate through top metal layers. The invention further discloses a manufacturing method of the germanium-silicon heterojunction bipolar transistor. According to the germanium-silicon heterojunction bipolar transistor provided by the invention, the structure of the device is not required to be changed, the ground spurious inductance of the device can be reduced, and the power characteristic of the device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a germanium-silicon heterojunction bipolar transistor; the invention also relates to a manufacturing method of the germanium-silicon heterojunction bipolar transistor. Background technique [0002] With the increasing maturity of the silicon germanium (SiGe) process, the integration of radio frequency circuits is becoming more and more common, and the radio frequency reception, radio frequency transmission and switches tend to be integrated, so the low noise amplifier (LNA) that amplifies the received signal and the power of the amplified transmitted signal Amplifiers (PA) should be fabricated on the same chip, so it is required to design high-voltage silicon-germanium heterojunction bipolar transistors (SiGe HBT) with different breakdown voltages on the same SiGe process platform only by changing the layout, so as to meet different requirements. ampl...

AI Technical Summary

Problems solved by technology

In the existing structure, through silicon via (Through Silicon Vias, TSV) structure is usually used to realize the connection between the front emitter of the silicon germanium heterojunction bipolar transistor and the P+ silicon substrate on the back, so as to reduce the parasitic inductance of the device to the ground , but the TSV process is more complicated, the cost is high, and there is a great risk of debris during back grinding

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