Solar cell back electrode passivation layer preparation technology based on surface oxidation method

A technology of surface oxidation and back electrode, which is applied in the field of solar cells, can solve the problems of high deposition energy of Mo thin films and affect the quality of the battery interface, and achieve the effect of improving the combination

Inactive Publication Date: 2015-04-29
SUZHOU RUISHENG SOLAR ENERGY TECH
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Problems solved by technology

However, due to the high deposition energy of the Mo thin film deposited at low pressure in the second stage, there is a large dif

Method used

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  • Solar cell back electrode passivation layer preparation technology based on surface oxidation method
  • Solar cell back electrode passivation layer preparation technology based on surface oxidation method

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[0019] Experimental example

[0020] 1. Put the cleaned substrate into the vacuum chamber of the magnetron sputtering equipment, the background vacuum to be DC sputtered is 3-9E-7mTorr, and start to run the magnetron sputtering process to deposit Mo thin film and prepare the substrate buffer layer (2). The Mo buffer layer (2) is deposited at a pressure of 8-12 mTorr and a power of 200-400 W to a thickness of 50-500 nm.

[0021] 2. On the basis of the buffer layer, the process parameters are changed, and the Mo conductive layer (3) with a thickness of 100-1000 nm is continuously deposited.

[0022] 3. After the conductive layer (3) reaches the required thickness, change the working gas to a mixed gas of argon and oxygen, and the oxygen flow rate is 10-50% of that of argon. A Mo passivation layer doped with MoO2 with a thickness of 30-200 nm is deposited (4).

[0023] This composite electrode has good adhesion to the substrate, and its sheet resistance figure 2 ).

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Abstract

The invention relates to a solar cell back electrode passivation layer preparation technology through adopting a surface oxidation method. A back electrode is characterized in that the back electrode is composed of two compositions. The back electrode comprises a buffer layer, a conducting layer and a passivation layer, wherein the buffer layer is an Mo thin film with a loose structure, so that the back electrode can make good contact with a substrate; the conducting layer is another Mo thin film which is with different structure of the buffer layer and with good electrical conductivity, and the conducting layer is used for collecting electrons generated by a conduction absorbing layer; the passivation layer is formed by adding an Mo thin layer which is mixed up with MoO2 on the Mo conducting layer surface through utilizing a surface oxidation technology, so that the passivation layer can make good contact with the absorbing layer, good electrical conductivity is maintained, and the efficiency of solar cell devices is improved. A solar cell back electrode passivation layer prepared through the surface oxidation method has the advantages that the machining is easy, the technology is continuous, the controllability is strong, and the solar cell back electrode passivation layer has an extensive prospect in the field of the future solar photovoltaic industry.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a process for preparing a CIGS solar cell back electrode passivation layer by adopting a surface oxidation method. technical background [0002] With the research and development of copper indium gallium selenide CIGS thin-film solar cells, metal Mo thin films have become the best choice for CIGS thin-film solar cells because of their high thermal stability, low resistivity, good ohmic contact and similar thermal expansion coefficient. The most commonly used back electrode layer for batteries, and is currently the most suitable layer to be contacted. The phase structure, morphology and resistivity of the Mo thin film directly affect the nucleation, growth and surface morphology of the CIGS thin film in the absorbing layer, which in turn has an important impact on the performance of the battery. In recent years, with the rapid development of thin-film solar cells, it is required that the...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/0216H01L31/0224H01L31/1844Y02E10/544Y02P70/50
Inventor 章婷郭瑞瑞钱磊
Owner SUZHOU RUISHENG SOLAR ENERGY TECH
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