Manufacturing method of hetero-junction solar cell and hetero-junction solar cell

Abstract

The invention discloses a manufacturing method of a hetero-junction solar cell. The manufacturing method of the hetero-junction solar cell comprises the steps that a substrate is provided; first intrinsic buffer layers are formed on one side or two sides of the substrate; second intrinsic buffer layers are formed on the two sides of the substrate with the first intrinsic buffer layers; doping layers, namely the first doping layer and the second doping layer, are formed on the two sides of the substrate with the second intrinsic buffer layers; transparent conducting layers are formed on the two sides of the substrate with the doping layers; or a transparent conducting layer is formed on one side of the substrate with the doping layers, and a transparent conducting oxide / metal composite layer is formed on the other side of the substrate with the doping layers. Therefore, the photoelectric conversion efficiency of the hetero-junction solar cell is improved. In addition, the invention provides the hetero-junction solar cell.

Description

technical field [0001] The present application relates to the field of new energy, in particular to a method for manufacturing a heterojunction solar cell and the heterojunction solar cell. Background technique [0002] Solar cells can also be called photovoltaic cells, which is a new power generation technology that uses the photovoltaic effect to directly convert solar radiation into electrical energy. Because of its abundant raw materials, cleanliness, safety, and long life, it is considered to be one of the most promising renewable energy technologies. [0003] At present, crystalline silicon solar cells include monocrystalline silicon solar cells, polycrystalline silicon solar cells, and high-efficiency crystalline silicon solar cells. [0004] The conversion efficiency of monocrystalline silicon solar cells is very high, and the technology is relatively mature. However, because it needs to use high-purity monocrystalline silicon rods as raw materials, the manufacturin...

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Problems solved by technology

However, the thickness of the intrinsic amorphous silicon layer is an important factor affecting the performance of the HIT battery. On the one hand, due to the low conductivity of the intrinsic amorphous silicon layer itself, too thick an intrinsic amorphous silicon layer will increase the performance of the battery. Connecting resistors in series reduces the filling factor accordingly, thereby reducing the conversion efficiency of the battery; in order to make the crystalline silicon have a good light-trapping effect, it is necessary to carry out texturing treatment on the crystalline silicon, because the surface roughness of the crystalline silicon increases after the texturing treatment, If the intrinsic amorphous silicon layer is too thin, it is difficult to uniformly deposit on the surface of crystalline silicon, and thus cannot have a good passivation effect on the heterojunction interface, and cannot reduce the loss of cell efficiency caused by interface recombination; On the other hand, since the intrinsic amorphous silicon layer is directly deposited on the surface of crystalline silicon, it will cause epitaxial growth and mixed phase growth of crystalline silicon, resulting in a high defect state density in the silicon atomic structure, which in turn leads to a lower interface quality.

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