Bi/g-C3N4 semimetal-organic composite photocatalyst and preparation method

A technology of g-c3n4 and semi-metal, which is applied in the field of photocatalyst preparation, can solve the problems of high cost and high price of photocatalyst, and achieve the effect of low price, simple preparation and improved visible light photocatalytic activity

Inactive Publication Date: 2015-05-13
CHONGQING TECH & BUSINESS UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a Bi / g-C 3 N 4 Semi-metal-organic composite photocatalyst and preparation method thereof, to solve the problem of high photocatalyst cost due to the high price of precious metals described in the background art

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  • Bi/g-C3N4 semimetal-organic composite photocatalyst and preparation method
  • Bi/g-C3N4 semimetal-organic composite photocatalyst and preparation method

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[0038] Please refer to the attached figure 1 , the Bi / g-C provided by the embodiment of the present invention 3 N 4 The preparation method of semimetal-organic composite photocatalyst comprises the following steps:

[0039] 11) Mixing the precursor of bismuth simple substance and graphene-like carbon nitrogen according to the mass ratio of bismuth simple substance and graphene-like carbon nitrogen in the precursor is 0.1% to 250%, to obtain a mixture;

[0040] 12) adding the mixture into a 1mol / L nitric acid solution to obtain a mixture solution, and adjusting the pH value of the mixture solution to 1-2;

[0041] 13) The mixture solution is heated under the reducing system of the reducing solvent, and Bi / g-C is obtained by in-situ deposition method 3 N 4 The semi-metal-organic composite photocatalyst has a heating temperature of 80-210°C and a heating time of 1h-48h.

[0042] Through analytical experiments, it can be seen that the Bi / g-C prepared by the above preparation ...

Embodiment 1

[0062] Bi(NO 3 ) 3 ·5H 2 O and g-C 3 N 4 According to Bi(NO 3 ) 3 ·5H2 The mass ratio of bismuth element and graphene-like carbonized nitrogen in O is mixed at 15%, and the mixture is heat-treated for 12 hours under the condition of heating temperature of 160°C in a reducing system of reducing solvent to obtain the mass of bismuth element and graphene-like carbonized nitrogen 15% Bi / g-C 3 N 4 Semimetallic-organic composite photocatalysts. After the heat treatment, the temperature of the composite photocatalyst was lowered to room temperature, and the composite photocatalyst was placed in a test tube for use.

[0063] The mass ratio of the bismuth simple substance prepared in the embodiment of the present invention to the graphene-like carbonized nitrogen is 15% Bi / g-C 3 N 4 Semimetal-organic composite photocatalysts were characterized by XRD, SEM, TEM, HRTEM, PL, UV-Vis DRS.

[0064] The mass ratio of the bismuth simple substance prepared in the embodiment of the pr...

Embodiment 2

[0066] Bi(NO 3 ) 3 ·5H 2 O and g-C 3 N 4 According to Bi(NO 3 ) 3 ·5H 2 The mass ratio of bismuth element and graphene-like nitrogen carbide in O is mixed at 25%, and the mixture is heat-treated for 12 hours in a reducing system of a reducing solvent at a temperature of 160°C to obtain the mass ratio of bismuth element and graphene-like carbon nitrogen 25% Bi / g-C 3 N 4 Semimetallic-organic composite photocatalysts. After the heat treatment, the temperature of the composite photocatalyst was lowered to room temperature, and the composite photocatalyst was placed in a test tube for use.

[0067] The mass ratio of the bismuth simple substance prepared in the embodiment of the present invention to the graphene-like carbonized nitrogen is 25% Bi / g-C 3 N 4 The characterization of the semi-metal-organic composite photocatalyst and the NO degradation test process of the composite photocatalyst are the same as in Example 1. Calculate the Bi / g-C prepared by the embodiment of...

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Abstract

The invention discloses a Bi / g-C3N4 semimetal-organic composite photocatalyst and a preparation method. The preparation method comprises the following steps: (11) mixing a precursor of a bismuth element and graphene-like carbide nitrogen according to the mass ratio of the bismuth element in the precursor to the graphene-like carbide nitrogen being 0.1%-250% so as to obtain a mixture; (12) adding the mixture into 1mol / L salpeter solution so as to obtain a mixture solution, and adjusting the pH value of the mixture solution to be 1-2; and (13) heating the mixture solution in a reduction system of a reducing solvent so as to obtain the Bi / g-C3N4 semimetal-organic composite photocatalyst by an in-situ precipitation method, wherein the temperature is 80-210 DEG C and the heating time is 1 hour-48 hours. The Bi / g-C3N4 semimetal-organic composite photocatalyst and the preparation method which are disclosed by the invention can be used for solving the problem of relatively high cost of the photocatalyst due to expensive precious metal in the prior art.

Description

technical field [0001] The invention relates to the technical field of photocatalyst preparation, more specifically, to a Bi / g-C 3 N 4 The semimetal-organic composite photocatalyst, the invention also relates to the preparation method of the photocatalyst. Background technique [0002] In recent years, air pollutants such as nitrogen oxides (NOx), sulfides, and volatile organic compounds (VOCs) have led to poor indoor air quality and seriously affected human health. Since people spend about 80% or more of their time indoors, in a sense, indoor air pollution has become a major invisible killer that endangers human health. With the advancement of science and technology, people's methods of controlling indoor environmental pollution are becoming more and more diverse. Traditional indoor air pollution purification mostly adopts porous adsorbent adsorption technology (such as activated carbon, silica gel and other adsorbents), but this adsorption technology only transfers poll...

Claims

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Application Information

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IPC IPC(8): B01J31/02B01J31/06B01J27/24
Inventor 董帆赵再望孙艳娟李佩东
Owner CHONGQING TECH & BUSINESS UNIV
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