Current mode sense amplifier circuit applied in semi-floating gate memory cell

Abstract

The invention discloses a current mode sense amplifier circuit applied in a semi-floating gate memory cell. The current mode sense amplifier circuit comprises a pre-charge circuit, a signal control switch, a read-out and write-back circuit, and a clamping bit line sense amplification circuit. The read-out and write-back circuit is formed by two cascaded standard voltage conversion circuits, and the level output by the clamping bit line sense amplification circuit is converted to the write-in level of the semi-floating gate memory cell by using a positive feedback principle. The current mode sense amplifier circuit applied in the semi-floating gate memory cell does not need bit line voltage change in the data access of the semi-floating gate memory cell, so the induction speed is improved; and the current mode sense amplifier circuit also has the advantages of simple structure, low voltage, low power consumption, high sensitivity and high working reliability.

Description

technical field [0001] The invention belongs to the technical field of sensitive amplifier circuits of semiconductor memories, in particular to a current-type sensitive amplifier circuit applied to semi-floating gate memory cells. Background technique [0002] Semiconductor memories are widely used in various electronic products. With the continuous development of semiconductor memory technology, the size of the semiconductor memory is getting smaller and higher, and the density is getting higher and higher, and the speed of accessing data of the semiconductor memory is also getting faster and faster. The sense amplifier is an important part of the semiconductor memory chip, which directly affects the reading and writing speed of the semiconductor memory. The sense amplifier samples the information on the bit line of the memory cell, judges through level comparison, and obtains high and low level (logic state "1" or "0") signals after amplification. With the improvement of...

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Problems solved by technology

As microelectronics technology enters deep submicron and even nanometer dimensions, the effective channel length and threshold voltage of semiconductor devices are more and more affected, thus affecting the performance and reliability of semiconductor memory

In particular, the existence of threshold voltage mismatch requires a higher bit line voltage swing in the normal working state of the sense amplifier, which prolongs the charging and discharging time of the bit line, which is not conducive to the optimization of the speed and power consumption of the sense amplifier. Therefore, semiconductor The design of the sensitive amplifier of the memory needs to solve the restriction of the charging and discharging time of the bit line on the speed improvement of the sensitive amplifier

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