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Semiconductor material preparation equipment

A semiconductor and equipment technology, applied in the field of semiconductor material preparation equipment, can solve the problems of single function and high cost, and achieve the effects of convenient operation, reduced preparation cost and simple structure

Active Publication Date: 2019-04-23
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a kind of semiconductor material preparation equipment, which has simple structure and convenient operation, has multiple functions such as rapid hot pressing, high temperature sintering, rapid solidification, and single crystal growth, and can solve the problem of existing thermoelectric material preparation equipment. The shortcomings of single function and high cost can not only effectively promote the large-scale mass production of thermoelectric materials, but also be widely used in the preparation of other semiconductor thermoelectric materials and metal materials.

Method used

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  • Semiconductor material preparation equipment
  • Semiconductor material preparation equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Semiconductor material preparation equipment, such as figure 1 , figure 2 As shown, it includes a furnace body 1 with a sealed furnace door 18, an induction coil 11, an inductor 12, an upper pressure head 8, a lower pressure head 4, and a thermocouple 6;

[0040] The upper pressing head 8 is located on the top of the furnace body 1;

[0041] The lower pressure head 4 is located at the bottom of the furnace body 1;

[0042] The induction coil 11 is helical, located in the center of the cavity of the furnace body 1, and the two ends pass through the furnace body 1 and are connected to the heating head of the induction power supply 16;

[0043] The induction power supply 16 has a frequency adjustable function, and the frequency range is 1000-400000Hz;

[0044] The upper pressing head 8, the lower pressing head 4 and the induction coil 11 are coaxial, and the cross section is circular;

[0045] The cross-sectional area of ​​the induction coil 11 is larger than the cros...

Embodiment 2

[0063] Based on the semiconductor material preparation equipment of Embodiment 1, the process of preparing nanocrystalline and microcrystalline bulk semiconductor materials is as follows:

[0064] Open the furnace door 18, put the graphite inductor 12 equipped with nanometer and micron powder samples 14 at the center of the lower pressure head 4, start the hydraulic system, lift the lower pressure head 4 to a suitable position, and simultaneously move the upper pressure head 8 Drop to a suitable position, insert the thermocouple 6 into the temperature measuring hole of the graphite sensor 12, close the furnace door 18, and start the vacuum system by heating the induction power supply. Until the vacuum degree meets the requirements, according to the characteristics of the sample, you can choose to keep the vacuum or fill the furnace cavity with inert gas. The sample is heated by the induction power supply, and when the required temperature is reached, the hydraulic system is ac...

Embodiment 3

[0066] Based on the semiconductor material preparation equipment of Embodiment 1, the sintering and smelting process of the semiconductor material is as follows:

[0067] Open the furnace door 18, put the graphite inductor 12 with the raw material sample 14 on the center position of the lower pressure head 4, start the hydraulic system, raise the lower pressure head 4 to the middle position in the coil 11, insert the thermocouple 6 into the In the temperature measuring hole of the graphite inductor 12, close the furnace door 18. Until the vacuum degree meets the requirements, you can choose to keep the vacuum or fill the furnace cavity with inert gas. When the desired atmosphere is reached, the sample is heated and sintered by an induction power supply. The sintering and smelting of semiconductor materials in the range of room temperature to 2000°C can be realized.

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Abstract

The invention discloses a semiconductor material preparation equipment. It includes a furnace body with a sealed furnace door, an induction coil, an inductor, an inductive power supply, an upper pressure head, a lower pressure head, a thermocouple, and a hydraulic system; the upper pressure head and the lower pressure head have adjustable displacement speed functions; the sensor is Graphite or stainless steel, with the functions of hot pressing grinding tool and crucible; the induction coil is located in the center of the furnace body cavity, and both ends pass out of the furnace body and are connected to the frequency-adjustable induction power supply; one end of the thermocouple is inserted into the furnace body cavity and inserted into the sensor The other end of the temperature measurement hole is connected to the temperature control instrument; the furnace body is equipped with an inflation port, a deflation port, and a vacuum system interface. The invention has a simple structure, is easy to operate, and has multiple functions. It can be used for rapid hot pressing of nanopowders, high-temperature smelting of semiconductor materials, rapid solidification of alloys, preparation of large grains or single crystal samples, and can also be used for vacuum heat treatment. It can effectively reduce the preparation cost of semiconductor materials, and is especially suitable for the preparation of thermoelectric materials.

Description

technical field [0001] The invention relates to semiconductor material manufacturing technology, in particular to a multifunctional semiconductor material preparation equipment. Background technique [0002] The Seebeck effect discovered in 1823 and the Peltier effect discovered in 1834 provided a theoretical basis for the application of thermoelectric energy converters and thermoelectric refrigeration. Thermoelectric materials are functional semiconductor materials that can convert heat and electricity into each other. They have no moving parts, are reliable and flexible, and are environmentally friendly. They are widely used in national defense, medical care, and people's livelihood. The radioisotope thermoelectric generator (RTG) based on thermoelectric conversion has been used as a power source for spacecraft by the United States and the Soviet Union since the 1970s, and it is still the most reliable and longest-lasting deep space power generation technology. Thermoelec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F27B14/04F27B14/14F27D7/06F27D11/06H01L35/34H10N10/01
Inventor 陈海燕王春林鲁林峰汪昌州陈小源
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI