Ion release deficiency improvement method based on model

Abstract

The invention discloses an ion release deficiency improvement method based on a model. The ion release deficiency improvement method based on the model includes that setting ion implantation conditions under different film thickness conditions according to a relation model between an oxide film thickness and an ion release deficiency when the thickness of a wafer surface oxide film is larger than a normal thickness standard, and inputting into a production execution system; before the ion implantation, measuring the thickness of the wafer surface oxide film, and storing data in the production execution system; when the measurement result shows that the oxide film thickness is larger than the normal thickness, allowing the production execution system to automatically regulate and control the ion implantation conditions according to set ion implantation conditions under different film thicknesses so as to prevent forming ion release deficiency when the oxide film thickness is larger than the normal thickness. The ion release deficiency improvement method based on the model avoids the ion release deficiency through building an ion release deficiency model and improving implantation technique, and the chip yield is effectively guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit production, and more specifically, to a model-based method for improving ion extraction defects. Background technique [0002] Advanced integrated circuit manufacturing processes generally include hundreds of steps, such as several major process modules including photolithography, etching, cleaning, film growth, and ion implantation. Each process module is equipped with corresponding process equipment; usually in After the process equipment, there is also a measurement station for testing process results such as the graphic size, alignment and film thickness of the product. The process of IC manufacturing, from the initial raw material input to the final product shipment, will go through a production cycle of 2 to 3 months. The entire production operation process is an automatic operation process under the control of the production execution system. [0003] see figure ...

AI Technical Summary

Problems solved by technology

However, during the production process, it was found that some wafers had a large number of bulging defects on the surface during the defect detection after heat treatment. Such defects may cause the chip to fail during long-term work.

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