Double-groove shaped structural semi-floating gate device and manufacturing method thereof

Abstract

The invention provides a double-groove shaped structural semi-floating gate device and a manufacturing method thereof. The device comprises an active area, a field oxygen area, a light doping area arranged in the active area, a first groove-shaped area, a dispersing area below a floating gate opening, a second groove-shaped area in a light doping leaking area, a second insulating layer which covers the structure, a control gate on the second insulating layer, a heavy doping source area and a narrow gap heavy doping leakage area, wherein the active area and the field oxygen area are positioned in a semiconductor substrate; two sides of the active area is divided into the light doping leakage and a light doping source area through the first groove-shaped area; a first insulating layer with a floating gate opening, and a floating gate which covers the first groove-shaped area and the floating gate opening are formed in the light doping leakage area; the heavy doping source area and the narrow inhibiting band heavy doping leakage area are arranged at two sides of the sidewall of the control gate. According to the device, the double-gate channel is adopted, so that the space for the device is reduced, and the integrity is improved; with the adoption of the narrow gap material of the leakage electrode, the band-to-band tunneling occurring is increased, and the reading-writing speed of the semi-floating gate device can be increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing technology, in particular to a semi-floating gate device with a double-groove structure and a manufacturing method thereof. Background technique [0002] Semiconductor memories are used in various electronic fields. Among them, a non-volatile memory (Nonvolatile Memory, NVM) can store data for a long time in the case of power failure. The floating gate transistor (Floating Gate Transistor, FGT) is the mainstream structure of many variants of non-volatile memory. [0003] The structure of FGT is similar to that of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It can be seen that the single-layer gate dielectric layer in MOSFET is changed to a charge storage layer (charge storage) embedded in two insulating layers (insulator). layer) "sandwich" grid. Among them, the charge storage layer is called a floating gate because it is surrounded by an i...

AI Technical Summary

Problems solved by technology

[0012] 1. The device is a planar channel device, which needs to occupy more substrate area and reduce the integration density of the chip

[0013] 2. The embedded tunneling field effect transistor TFET is a planar structure, and the increase in chip area leads to a decrease in integration; under tunneling, the leakage is high

[0014] 3. The high bandgap width of the tunneling field effect transistor TFET embedded in silicon material leads to a low incidence of interband tunneling, resulting in a decrease in device storage speed

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