A flexible thermoelectric thin film device

Abstract

A flexible thermoelectric thin film device, the device includes a polyimide flexible substrate, a copper electrode film, a nickel transition layer and a thermoelectric thin film, the particle size of the thermoelectric thin film is arranged in a gradient, and the thermoelectric thin film includes a P-type thermoelectric Thin film and N-type thermoelectric film, the P-type thermoelectric film and N-type thermoelectric film are connected by a copper electrode film, forming an arrayed arrangement and series p-n thermocouple pairs on a flexible substrate to form an in-plane structure Flexible thermoelectric thin film devices. By adjusting the sputtering parameters and heat treatment process to optimize the microscopic interface structure of thin film materials, the reliable deposition of inorganic thin films on flexible substrates can be achieved, and reliable high-performance flexible thermoelectric thin film devices can be obtained.

Description

technical field [0001] The invention relates to a thermoelectric device, in particular to a flexible thermoelectric thin film device prepared by magnetron sputtering technology. Background technique [0002] Thermoelectric materials are functional materials that can convert heat and electricity into each other, and can be used in the manufacture of thermoelectric generators, refrigerators and sensors. Commonly used thermoelectric materials include inorganic thermoelectric materials and organic thermoelectric materials. The performance of thermoelectric materials is related to three parameters: Seebeck coefficient α, electrical conductivity σ and thermal conductivity κ. The thermoelectric figure of merit ZT (ZT=α 2 σT / κ) is a dimensionless description, in which the electrical part PF(α 2 σ) is called the "power factor"; the higher the power factor of a thermoelectric material, the better its thermoelectric performance. In practical applications, thermoelectric materials are...

AI Technical Summary

Problems solved by technology

At present, the thermoelectric materials used in flexible thermoelectric devices that have come out are generally organic thermoelectric materials, but the Seebeck coefficient α and electrical conductivity σ of organic thermoelectric materials are quite low, and the thermoelectric performance is far lower than that of inorganic thermoelectric materials such as bismuth telluride. used in practice; and inorganic thermoelectric materials are difficult to be used in flexible thermoelectric devices due to their own brittleness

On the other hand, the preparation methods of organic thermoelectric materials are mainly printing methods or chemical methods, etc., and the binding force between the prepared thermoelectric materials and the substrate is very weak.

[0004] In fact, inorganic thermoelectric materials can be flexible and efficient through thin film, but the difficulty lies in how to achieve high bonding force between inorganic thermoelectric thin films and flexible substrates to ensure high reliability of flexible thermoelectric thin film devices

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