Layer-shaped high thermal conductive and insulating base plate and preparation method thereof

An insulating substrate, high thermal conductivity technology, applied in the field of electronics, can solve the problems of not having high-strength electrical insulation properties, low thermal conductivity of insulating materials, and inability to meet the high thermal conductivity of substrates, etc., to achieve good dimensional stability, low thermal expansion coefficient, high intensity effect

Inactive Publication Date: 2015-06-24
有研科技集团有限公司
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0004] The traditional high thermal conductivity insulating substrate is the metal substrate of the prepreg in the copper clad laminate production method as the insulating layer, such as the prepreg using epoxy-glass cloth base (FR-4) (the thermal conductivity is only 0.3W/m·K), but this There is no thermal conductive filler added to the insulating layer. The insulating layer of this substrate does not have high thermal conductivity, nor does it have high-strength electrical insulation properties.
In addition, the selected insulating material can be coated on the surface of the treated metal sheet by spraying, scraping, brushing or printing to form a semi-solid adhesive film, and then laminated with copper foil. , formin

Method used

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  • Layer-shaped high thermal conductive and insulating base plate and preparation method thereof
  • Layer-shaped high thermal conductive and insulating base plate and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The preparation method of the high thermal conductivity insulating substrate comprises the following steps:

[0024] Step 1: Prepare the diamond / copper composite material sample by pressure infiltration method. The volume fraction of diamond particles is 60%, and it is processed into a rectangular block of 30mm×40mm×3mm. Generally speaking, the shape of the composite material sample is Not set, and not limited to any thickness, but 2mm or more is the preferred thickness;

[0025] Step 2: Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / copper composite material sample;

[0026] Step 3: Depositing a Ti transition layer on the diamond / copper composite material sample by magnetron sputtering, the thickness of the transition layer is 100nm;

[0027] Step 4: Deposit an AlN insulating film on the diamond / copper composite material sample deposited with a Ti transition layer by magnetron sputtering. The thickness of the insulating film is 3 μm...

Embodiment 2

[0029] The preparation method of the high thermal conductivity insulating substrate comprises the following steps:

[0030] Step 1: Prepare a diamond / copper composite material sample by pressure infiltration method, the volume fraction of diamond particles is 65%, and process it into a rectangular block of 40mm×50mm×3mm;

[0031] Step 2: Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / copper composite material sample;

[0032] Step 3: Depositing a Ti transition layer on the diamond / copper composite material sample by magnetron sputtering, the thickness of the transition layer is 200nm;

[0033] Step 4: Deposit an AlN insulating film on the diamond / copper composite material sample deposited with a Ti transition layer by magnetron sputtering, the thickness of the insulating film is 4 μm, and the dielectric strength of the diamond / copper composite substrate after depositing the AlN insulating film The electrical constant is 10.2, and the dielec...

Embodiment 3

[0035] The preparation method of the high thermal conductivity insulating substrate comprises the following steps:

[0036] Step 1: Prepare a diamond / aluminum composite material sample by pressure infiltration method, the volume fraction of diamond particles is 60%, and process it into a rectangular block of 35mm×45mm×3mm;

[0037] Step 2: Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / aluminum composite material sample;

[0038] Step 3: Depositing a Ti transition layer on the diamond / aluminum composite material sample by magnetron sputtering, the thickness of the transition layer is 150nm;

[0039] Step 4: Deposit a BN insulating film on the diamond / aluminum composite material sample deposited with a Ti transition layer by magnetron sputtering. The thickness of the insulating film is 3 μm. After depositing the BN insulating film, the dielectric strength of the diamond / copper composite substrate The electrical constant is 4.5, and the diele...

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Abstract

The invention discloses a layer-shaped high thermal conductive and insulating base plate and a preparation method thereof, and belongs to the technical field of electronics. The high thermal conductive and insulating base plate is composed of a high thermal conductive composite material base body and an insulating film layer deposited on the high thermal conductive composite material base body; the high thermal conductive and insulating base plate is prepared by depositing the insulating film layer on the surface by adopting a physical or chemical method on the basis of the high thermal conductive composite material base body. The insulating base plate has the high thermal conductivity, the low-grade fever expansion factor, the high intensity and a good size stability performance, and further has the high disruptive strength, the high dielectric constant and other characters. According to the high thermal conductive and insulating base plate, the requirement of insulating function is met when an electronic packaging base plate is on the basis of maintaining a good heat dissipation of a base material.

Description

technical field [0001] The invention belongs to the field of electronic technology, in particular to a layered high thermal conductivity insulating substrate and a preparation method thereof. Background technique [0002] Due to the rapid increase in the integration of integrated circuits, the heat generated by the chip has risen sharply, which has reduced the life of the chip. The reason is that in microelectronic integrated circuits and high-power rectifier devices, thermal fatigue caused by poor heat dissipation between materials and Caused by thermal stress caused by thermal expansion coefficient mismatch. The key to solving this problem is to carry out reasonable encapsulation. Judging from the current development trend of electronic packaging technology, various packaging materials with a single substrate cannot meet the comprehensive requirements of various performances. Metal matrix composites can fully meet the above requirements. It is especially suitable for po...

Claims

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Application Information

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IPC IPC(8): H01L23/14H01L21/48
Inventor 韩媛媛郭宏张习敏尹法章范叶明徐骏
Owner 有研科技集团有限公司
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