Organic light-emitting device and preparation method thereof
An electroluminescent device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low recombination probability of excitons and low luminous efficiency of devices, so as to improve electron injection efficiency and Electron transmission rate, improved light extraction efficiency, and high stability
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Embodiment 1
[0043] A method for preparing an organic electroluminescent device, comprising the following steps:
[0044] (1) Sonicate commercially available ordinary glass with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic pollutants on the glass surface, clean it and air dry it; then use it on the glass substrate ITO with a thickness of 120nm was prepared by magnetron sputtering. The acceleration voltage of magnetron sputtering was 700V, the magnetic field was 120G, and the power density was 25W / cm 2 ; Then adopt the method of thermal resistance evaporation on the anode to prepare hole injection layer, hole transport layer, light-emitting layer and electron transport layer successively; Wherein,
[0045] The hole injection layer is made of MoO 3 , the pressure used in evaporation is 8×10 -4 Pa, the evaporation rate is 2nm / s, and the evaporation thickness is 40nm;
[0046] The material of the hole transport layer is NPB, and the pre...
Embodiment 2
[0057] A method for preparing an organic electroluminescent device, comprising the following steps:
[0058] (1) Sonicate commercially available ordinary glass with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic pollutants on the glass surface, clean it and air dry it; then use it on the glass substrate AZO with a thickness of 300nm was prepared by magnetron sputtering. The acceleration voltage of magnetron sputtering was 300V, the magnetic field was 50G, and the power density was 40W / cm 2 ; Then adopt the method of thermal resistance evaporation on the anode to prepare hole injection layer, hole transport layer, light-emitting layer and electron transport layer successively; Wherein,
[0059] The material of the hole injection layer is V 2 o 5 , the pressure used in evaporation is 2×10 -3 Pa, the evaporation rate is 10nm / s, and the evaporation thickness is 20nm;
[0060] The material of the hole transport layer is TAPC,...
Embodiment 3
[0071] A method for preparing an organic electroluminescent device, comprising the following steps:
[0072] (1) Sonicate commercially available ordinary glass with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes to remove organic pollutants on the glass surface, clean it and air dry it; then use it on the glass substrate AZO with a thickness of 150nm was prepared by magnetron sputtering. The acceleration voltage of magnetron sputtering was 800V, the magnetic field was 200G, and the power density was 1W / cm 2 ; Then adopt the method of thermal resistance evaporation on the anode to prepare hole injection layer, hole transport layer, light-emitting layer and electron transport layer successively; Wherein,
[0073] The material of the hole injection layer is V 2 o 5 , the pressure used in evaporation is 5×10 -5 Pa, the evaporation rate is 1nm / s, and the evaporation thickness is 55nm;
[0074] The material of the hole transport layer is TCTA, and the...
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