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Organic light emitting diode and preparation method thereof

An electroluminescent device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low luminous efficiency, improve luminous efficiency, increase film density, and improve electronic components. The effect of transfer rate

Inactive Publication Date: 2014-12-31
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the luminous efficiency of organic electroluminescent devices is low at present

Method used

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  • Organic light emitting diode and preparation method thereof
  • Organic light emitting diode and preparation method thereof
  • Organic light emitting diode and preparation method thereof

Examples

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preparation example Construction

[0036] See also figure 2 , The method for manufacturing the organic electroluminescent device 100 of an embodiment includes the following steps:

[0037] In step S110, the hole injection layer 20, the first hole transport layer 32, the first light-emitting layer 34, and the first electron transport layer 36 are prepared by evaporation on the surface of the anode in sequence.

[0038] The anode 10 is indium tin oxide glass (ITO), aluminum zinc oxide glass (AZO), or indium zinc oxide glass (IZO), preferably ITO.

[0039] In this embodiment, the anode 10 is pre-treated before the hole injection layer 20 is formed on the surface of the anode 10. The pre-treatment includes: performing photolithography treatment on the anode 10, cutting it to the required size, and using detergent and deionization. Water, acetone, ethanol, and isoacetone were each ultrasonically cleaned for 15 minutes to remove organic contaminants on the anode 10 surface.

[0040] The hole injection layer 20 is formed on ...

Embodiment 1

[0056] The structure prepared in this embodiment is ITO / V 2 O 5 / NPB / Alq 3 / TPBI / ZnO:Al / MoO 3 / FeCl 3 :HfO 2 / TCTA / Alq 3 / TPBi / Cs 2 CO 3 / Al organic electroluminescent device. Wherein, " / " means a laminated structure, and ":" means doping or mixing, and the following embodiments are the same.

[0057] Firstly, ITO is processed by photolithography and cut to the required size, followed by sonication with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic contaminants on the glass surface; vapor-deposit hole injection layer , The material is V 2 O 5 , The thickness is 60nm; the first hole transport layer is vapor-deposited, the material is NPB, the thickness is 40nm; the first light-emitting layer is vapor-deposited, the material is Alq 3 , The thickness is 25nm; the first electron transport layer is vapor-deposited, the material is TPBI, the thickness is 60nm; the charge generation layer is prepared, and the n-type layer is prepared ...

Embodiment 2

[0062] The structure prepared in this example is AZO / WO 3 / TCTA / ADN / TPBi / TiO 2 :Ag / WO 3 / FeBr 3 :HfB 2 / NPB / ADN / TAZ / CsN 3 / Pt organic electroluminescent device.

[0063] First, the AZO glass substrate was used detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface; the hole injection layer was prepared by evaporation, and the material was WO 3 , The thickness is 80nm; the first hole transport layer is prepared by vapor deposition, the material is TCTA, the thickness is 60nm; the first light-emitting layer is prepared by vapor deposition, the material is ADN, the thickness is 5nm; the first electron transport layer is prepared by vapor deposition, the material is TPBi, the thickness is 200nm; the charge generation layer is prepared, and the n-type layer is made of TiO by electron beam evaporation 2 :Ag, TiO 2 The mass ratio to Ag is 1:20, the thickness is 20nm, and the material for the intermediate layer prepared by evaporation is...

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Abstract

The invention provides an organic light emitting diode which comprises an anode, a hole injection layer, a first hole transmission layer, a first light emitting layer, a first electron transmission layer, a charge generation layer, a second hole transmission layer, a second light emitting layer, a second electron transmission layer, an electron injection layer and a cathode which are sequentially stacked, wherein the charge generation layer comprises an n-type layer, an intermediate layer and a p-type layer; the n-type layer is made of metal and metal oxide doped in the metal; the intermediate layer is made of bipolar metal oxide; and the p-type layer is a hafnium compound and ferric salt doped in the hafnium compound. The organic light emitting diode is higher in light emitting efficiency. The invention further provides a preparation method of the organic light emitting diode.

Description

Technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The light-emitting principle of organic electroluminescent devices is based on the fact that electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter under the action of an external electric field, and holes are injected from the anode to the highest occupied orbital (HOMO) of organic matter. Electrons and holes meet and recombine in the light-emitting layer to form excitons. The excitons migrate under the action of an electric field, transfer energy to the luminescent material, and excite the electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to produce photons , Release light energy. However, the current luminous efficiency of organic electroluminescent devices is low. Summary of the invention [0003] Based on...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/111H10K85/615H10K85/6572H10K50/14H10K50/11H10K50/00H10K71/00
Inventor 周明杰黄辉张振华王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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