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Laser annealing device and method

A technology of laser annealing and laser beam, applied in the field of ultra-shallow junction annealing of logic devices, can solve the problems of increasing process cost and complexity, and achieve the effects of optimizing temperature control technology, reducing stress problem and reducing cost

Inactive Publication Date: 2015-07-01
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

The low-power preheating laser is used for preheating, and the high-power laser in the middle is used for instantaneous annealing. Although a good annealing effect can be achieved, this will undoubtedly increase the cost and complexity of the process, because two heat sources are required, and the The two beam spots are combined and positioned, and the synchronization of the movement of the two lasers must be ensured during the heating process

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  • Laser annealing device and method

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Embodiment Construction

[0022] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] The purpose of the present invention is to provide a laser annealing device, which can be used for annealing various semiconductor devices. In order to get as Figure 4 The spot shown in the present invention provides a more advanced spot shaping technology, which performs beam shaping on a high-power continuous laser, and improves the existing two-laser group and the method for obtaining an annealing spot.

[0024] The laser annealing device provided by the present invention is as figure 2 shown in . The laser annealing device includes: a high-power laser 1 with a maximum output power of 4000W (the specific temperature value is illustrated by USJ annealing as an example). The laser output beam 2, the beam 2 passes through the optical converging lens 3, converges at the focal point of the front group lens 4, passes through the fron...

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Abstract

The invention discloses a laser annealing device. The laser annealing device comprises a workpiece platform, a laser source and a light beam shaping unit, wherein the workpiece platform carries a silicon chip, the laser source provides an annealing laser beam, and the light beam shaping unit inputs the laser beam to the silicon chip. The light beam shaping unit comprises a micro-lens array which is used to re-distribute power of the laser beam spatially. The invention also discloses a laser annealing method.

Description

technical field [0001] The invention relates to the field of ultra-shallow junction annealing of logic devices, in particular to a laser annealing device and method. Background technique [0002] Rapid thermal processing (RTP), flash lamp annealing, and laser annealing (LSA) are all efforts to optimize semiconductor annealing. Among them, LSA only generates heat in a small area in a very short period of time, its temperature is just below the melting point of silicon, and the cooling time is also completed in a very short period of time. The overall residence time is only a few hundred microseconds, which is more effective. diffusion-free process. According to application requirements, the annealing process of semiconductor devices requires more precise temperature control and better temperature and stress uniformity, usually by reducing the thermal gradient in the silicon substrate crystal, thereby reducing the thermal stress between the crystal lattices. For example, in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268B23K26/06
CPCH01L21/268B23K26/06
Inventor 程蕾丽
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD