IGBT (Insulated Gate Bipolar Transistor) chip manufacturing method for crimped type package

Abstract

The invention relates to an IGBT (Insulated Gate Bipolar Transistor) chip manufacturing method for crimped type package. The IGBT chip manufacturing method comprises the following steps: selecting a silicon substrate and preprocessing the silicon substrate; carrying out field oxide layer growth on the surface of the silicon substrate, and etching the field oxide layer; manufacturing a gate oxide layer and a polysilicon gate electrode; manufacturing a P well and an N well; manufacturing Spacer, a P+ type doping region and an N+ type doping region; forming a positive electrode EM2 above the polysilicon gate electrode; forming a positive electrode EM1 on the outer side of the positive electrode EM2; forming a P+ collector region on the back surface of the silicon substrate; manufacturing a back electrode C. According to the technical scheme provided by the invention, the IGBT chip manufacturing method has low requirement on technological precision, and the tape-out cost is reduced.

Description

Technical field: [0001] The invention relates to the field of power electronic devices, and more specifically relates to a method for manufacturing an IGBT chip suitable for crimping packaging. Background technique: [0002] The structural form of the press-fit IGBT is derived from the packaging form of traditional power devices such as thyristors and GTOs. It does not require chip welding, avoids the binding of leads, and can reduce the parasitic inductance of the circuit; the press-fit IGBT module can dissipate heat on both sides, and the heat dissipation efficiency Higher and better reliability; based on the fact that the crimping IGBT module is easy to be connected in series, the voltage level of the equipment can be improved. With this feature, the crimping module is widely used in ultra-high voltage (HVDC), static var compensation (SVC), multi- Level inverters, etc.; in addition, the short-circuit failure mode of the crimped IGBT module makes the power grid more stable...

AI Technical Summary

Problems solved by technology

In terms of the conventional semiconductor process flow, there are two options to choose: first, after the metal electrode is completed, the second metal deposition, photolithography process, and metal etching are performed to complete, but this method needs to be completed in the second Before layer metal deposition, a corrosion barrier layer (usually Si x N y ), it is necessary to add a photolithography process, which leads to the extension of the chip processing cycle and the increase of the processing cost; second, the direct deposition of thick metal is completed by two photolithography processes and metal etching, but because metal etching is generally a wet process Etching, the thickness of the two layers of metal is not easy to control, and the process precision is high

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