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Corrosion liquid of InAsSb/AlAsSb infrared detector and manufacturing method of InAsSb/AlAsSb infrared detector

A technology of infrared detectors and manufacturing methods, which is applied in the manufacturing of semiconductor devices, electrical components, and final products, etc., can solve the problems of expensive investment in dry etching process equipment, achieve high yield, appropriate corrosion speed, reduce dependence and The effect of loss

Inactive Publication Date: 2015-08-05
SOUTH CHINA NORMAL UNIVERSITY
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Problems solved by technology

[0003] Considering the complex mechanical, electrical and vacuum devices used in dry etching widely used in process manufacturing, and equipped with automatic etching end point detection and control devices, the equipment investment of dry etching process is expensive

Method used

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  • Corrosion liquid of InAsSb/AlAsSb infrared detector and manufacturing method of InAsSb/AlAsSb infrared detector
  • Corrosion liquid of InAsSb/AlAsSb infrared detector and manufacturing method of InAsSb/AlAsSb infrared detector
  • Corrosion liquid of InAsSb/AlAsSb infrared detector and manufacturing method of InAsSb/AlAsSb infrared detector

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Embodiment Construction

[0030] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0031] A kind of corrosion solution of InAsSb / AlAsSb material infrared detection device, this corrosion solution is made of nitric acid HNO 3 , hydrogen peroxide H 2 o 2 and water H 2 O formulated, the ratio is HNO 3 :H 2 o 2 :H 2 O=1:1:4.

[0032] refer to figure 1 , a method for manufacturing an InAsSb / AlAsSb material infrared detection device, comprising the following steps:

[0033] A. Using molecular beam epitaxy (MBE, Molecular Beam Epitaxy) to grow epitaxial wafers of infrared detectors made of InAsSb / AlAsSb materials on GaSb substrates;

[0034] B. Ultrasonic cleaning of epitaxial wafers with acetone, alcohol, and deionized water for 5 minutes, 5 minutes, and 10 minutes in sequence, and then baked on a baking table at 180°C for 10 minutes;

[0035] C. Use a positive resist with a thickness of 1.5 μm, the hardening condition is 90...

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Abstract

The invention discloses a corrosion liquid of an InAsSb / AlAsSb infrared detector and a manufacturing method of the InAsSb / AlAsSb infrared detector. The corrosion liquid has an average alloy corrosion rate of 27nm / s in wet etching of Si-InAs, Si-InAsSb and AlA2-AlSb at a temperature of 20 DEG C, has an appropriate corrosion rate and good corrosion effects, is free of large-scale equipment used by dry etching and reduces a cost. The corrosion liquid can realize wet etching of a lower electrode, is free of the large-scale equipment used by dry etching, and reduces a cost. The manufacturing method is a convenient and easy device etching process, guarantees the same infrared detector parameters, reduces dependence on large-scale equipment and loss and finishes processes on the device. The corrosion liquid of an InAsSb / AlAsSb infrared detector and the manufacturing method of the InAsSb / AlAsSb infrared detector can be widely used in the field of semiconductors.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a corrosion solution for an InAsSb / AlAsSb material infrared detection device and a device manufacturing method. Background technique [0002] As a kind of detector, semiconductor infrared detector can be used in military tracking, night vision, monitoring and underground material exploration and other equipment. At present, the research and development and preparation of semiconductor infrared detector has become a hot spot in the scientific research field, which is more common than the current use The mercury cadmium telluride infrared detector has a wider detection wavelength (theoretically supports short-wave to very long-wave 30μm adjustable) device performance is uniform and stable, suitable for mass production, can detect more colors, and make a detection array with a larger focal plane. The device technology of the semiconductor detector is also a key step in the production p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/16C23F1/02H01L31/18
CPCY02P70/50
Inventor 何苗杨旗郑树文宿世臣
Owner SOUTH CHINA NORMAL UNIVERSITY
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