Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nano-patterns based on laser interferometric lithography

A laser interference lithography, nano-patterning technology, applied in nanotechnology, opto-mechanical equipment, optics, etc., can solve the problems of increasing exposure dose and high cost, avoiding standing wave effect, good industrialization, and reducing cost effect of stress

Inactive Publication Date: 2015-08-05
SOUTH CHINA NORMAL UNIVERSITY
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, thick glue is mostly used in the preparation of graphics, but thick glue will bring some complicated processes, the introduction of post-baking and anti-reflection layers, and thick glue will also increase the exposure dose during the process of preparing graphics. There are higher requirements on cost, so thin plastic graphics have more space to use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nano-patterns based on laser interferometric lithography
  • Method for preparing nano-patterns based on laser interferometric lithography
  • Method for preparing nano-patterns based on laser interferometric lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0034] refer to figure 1 , a method for preparing nano-patterns based on laser interference lithography, comprising the following steps:

[0035] A. Clean the silicon wafer sequentially with alcohol, acetone, and deionized water, and then dry it with a nitrogen gun;

[0036] B. Bake on a hot plate to remove residual moisture on the surface;

[0037] C, using photoresist treatment, the thickness of the glue is 100nm;

[0038] D. Bake on a hot plate to remove excess organic solvent;

[0039] E. Expose by laser interference lithography system, the incident angle of the laser is 20.7°, and the period of the obtained pattern is 460nm;

[0040] F, configure developing solution, utilize developing solution to develop;

[0041] G. Rinse with deionized water and dry with a nitrogen gun.

[0042] As a further preferred embodiment, in the above step A,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing nano-patterns based on laser interferometric lithography. The method comprises the following steps of carrying out ultrasonic cleaning on a silicon chip, carrying out blow-drying by a nitrogen gun, carrying out baking to remove water, carrying out treatment by a photoresist, carrying out baking to remove a redundant organic solvent, carrying out exposure, carrying out development, carrying out washing by deionized water and carrying out blow-drying by a nitrogen gun. The method utilizes a thin glue method and prepares high-uniformity nano-patterns on the silicon chip by a laser interferometric lithography platform. The method effectively avoids standing wave effects, provides good mask patterns for dry method etching, lays a good foundation for preparing a large-area dot matrix or aperture array material, utilizes a cheap system because of the thin glue method, reduces a cost and provides a good foundation for realizing industrialization. The method for preparing nano-patterns based on laser interferometric lithography can be widely used in the field of semiconductors.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for preparing nanometer patterns based on laser interference photolithography technology. Background technique [0002] Nano-patterns have a wide range of applications, such as in LEDs, solar cells, quantum dots, and detectors, and can be used to make graphic substrates to improve various performances of devices. There are many photolithographic techniques for preparing graphics, such as ultraviolet exposure, electron beam exposure, laser interference, etc., and the use of laser interference to prepare graphics has higher advantages. [0003] Laser interference lithography is an efficient and low-cost lithography technology, which can prepare large-area photoresist patterns, and the patterns produced have better uniformity. Laser interference lithography uses two beams of laser coherent light to interfere, and uses its light and dark interference fringes to perform lithogr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00H01L21/027B82Y40/00
Inventor 何苗杨帆郑树文宿世臣
Owner SOUTH CHINA NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com