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A kind of yttrium iron garnet single crystal film and preparation method thereof

A technology of yttrium iron garnet and single crystal thin film, which is applied in the field of liquid phase epitaxy preparation of yttrium iron garnet single crystal thin film, can solve the problems of large thin film, broken substrate, difficulty, etc., achieve roughness improvement, reduce Effect of small stress, increasing proportion

Active Publication Date: 2017-10-17
成都威频科技有限公司
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AI Technical Summary

Problems solved by technology

The preparation methods of yttrium iron garnet film mainly include vapor phase epitaxy and liquid phase epitaxy. The vapor phase epitaxy will produce more defects on the surface of the yttrium iron garnet film, which makes the ferromagnetic resonance linewidth of the film larger; while the liquid phase epitaxy method It is difficult to adjust the ferromagnetic resonance linewidth of yttrium iron garnet film to less than 1Oe in the selection of melt formula and growth temperature, and substrate cracking is prone to occur when growing thicker films on larger substrates

Method used

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  • A kind of yttrium iron garnet single crystal film and preparation method thereof

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preparation example Construction

[0016] A preparation method of yttrium iron garnet single crystal film, comprising the following steps:

[0017] Step 1: Melt Preparation: Take Y 2 o 3 , Fe 2 o 3 , La 2 o 3 , PbO, B 2 o 3 As the raw material, accurately weigh the above raw materials, where, Y 2 o 3 The mass percentage content is 0.44%, Fe 2 o 3 The mass percentage content is 10.31%, La 2 o 3 The mass percentage of PbO is 0.06%, the mass percentage of PbO is 87.44%, B 2 o 3 The mass percentage content is 1.75%; the above raw materials are mixed evenly, added to the crucible several times, melted at 1080-1140°C for 24 hours, then stirred with a platinum stirring rod for 8-12 hours, and mixed evenly to obtain liquid phase epitaxy growth the melt;

[0018] Step 2: Using gadolinium gallium garnet (GGG) as the substrate, the cleaning process of the substrate is as follows: soak the gadolinium gallium garnet substrate in trichlorethylene at 70-80°C for 3-10min, and then wash it at 70-80°C Soak in dei...

Embodiment

[0021] A preparation method of yttrium iron garnet single crystal film, comprising the following steps:

[0022] Step 1: According to the following molar ratio R1=Fe 2 o 3 / (La 2 o 3 +Y 2 o 3 )=27.1, R3=PbO / B 2 o 3=15.6, R4=(Y 2 o 3 +Fe 2 o 3 +La 2 o 3 ) / (Y 2 o 3 +Fe 2 o 3 +La 2 o 3 +PbO+B 2 o 3 )=0.138, calculate and weigh 39.7325g Y 2 o 3 , 928.1934g Fe 2 o 3 , 5.7330g La 2 o 3 , 7869.0079g PbO and 157.3332g B 2 o 3 As a raw material, the above-mentioned raw materials were mixed for two hours in a horizontal ball mill at a rate of 30 rpm, so that the raw materials were evenly mixed;

[0023] Step 2: Due to the large volume of the raw material powder, the platinum crucible cannot hold all the powder at one time. The raw material is added to the platinum crucible several times by adding the powder to melt and then re-feeding, and then put it in the vertical pulling furnace Melt at 1100°C for 24 hours; use a platinum stirring rod to stir at a speed ...

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Abstract

The invention provides a yttrium iron garnet single crystal thin film and a preparation method thereof by liquid phase epitaxy, belonging to the field of electronic materials. The composition of the yttrium iron garnet single crystal thin film is LaxY3-xFe5O12, and the range of x is 0.01-0.05. The present invention adopts Y2O3, Fe2O3, La2O3, PbO, B2O3 as raw materials, the mass percentage of Y2O3 is 0.44%, the mass percentage of Fe2O3 is 10.31%, the mass percentage of La2O3 is 0.06%, and the mass percentage of PbO The content is 87.44%, and the mass percentage of B2O3 is 1.75%. Then, a single crystal thin film is grown by liquid phase epitaxy. The ferromagnetic resonance line width of the yttrium iron garnet single crystal film obtained by the invention is very narrow, reaching below 1Oe; the roughness, lattice matching, film stress, lead content and impurity of the film are all improved.

Description

technical field [0001] The invention belongs to the field of electronic materials, in particular to a liquid phase epitaxy preparation method of yttrium iron garnet (YIG) single crystal thin film. Background technique [0002] Yttrium iron garnet (YIG) thin films have excellent low-loss transmission properties in the microwave region, and thus are considered to be a promising material in both high-performance nonreciprocal devices and microwave devices. The yttrium iron garnet film is the carrier material of the magnetostatic wave, which can be applied to the magnetostatic wave device. In order to ensure good microwave performance, on the one hand, the carrier material yttrium iron garnet film is required to have sufficient thickness, generally in the order of microns; On the one hand, the carrier material yttrium iron garnet film is required to have as small an inherent loss as possible under the premise of ensuring power capacity, and the transmission loss is proportional ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B19/10
Inventor 杨青慧饶毅恒张怀武田晓洁文岐业贾利军朱英超金曙晨梅兵
Owner 成都威频科技有限公司
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